C. J. Arsenault, Michel Meunier, M. Beaudoin and B. Movaghar
Article (1991)
An external link is available for this itemDepartment: | Department of Engineering Physics |
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Research Center: | GCM - Thin Film Physics and Technology Research Group |
PolyPublie URL: | https://publications.polymtl.ca/35685/ |
Journal Title: | Journal of Non-Crystalline Solids (vol. 137-138) |
Publisher: | Elsevier |
DOI: | 10.1016/s0022-3093(05)80317-5 |
Official URL: | https://doi.org/10.1016/s0022-3093%2805%2980317-5 |
Date Deposited: | 18 Apr 2023 15:26 |
Last Modified: | 08 Apr 2025 06:57 |
Cite in APA 7: | Arsenault, C. J., Meunier, M., Beaudoin, M., & Movaghar, B. (1991). Electronic transport through a-Si:H/a-SiNₓ:H single and double barrier structures. Journal of Non-Crystalline Solids, 137-138, 1111-1114. https://doi.org/10.1016/s0022-3093%2805%2980317-5 |
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