M. Beaudoin, Rémo A. Masut
, L. Isnard, Patrick Desjardins, A. Bensaada, Gilles L'Espérance and R. Leonelli
Paper (1994)
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| Additional Information: | Nom historique du département: Département de métallurgie et de génie des matériaux |
|---|---|
| Department: | Department of Engineering Physics |
| Research Center: |
(CM)² - Centre for Characterization and Microscopy of Materials GCM - Thin Film Physics and Technology Research Group |
| PolyPublie URL: | https://publications.polymtl.ca/32594/ |
| Conference Title: | Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society |
| Conference Location: | Boston, USA |
| Conference Date(s): | 1994-11-29 - 1994-12-02 |
| Publisher: | Materials Research Society |
| DOI: | 10.1557/proc-358-1005 |
| Official URL: | https://doi.org/10.1557/proc-358-1005 |
| Date Deposited: | 18 Apr 2023 15:24 |
| Last Modified: | 25 Sep 2024 16:15 |
| Cite in APA 7: | Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (1994, November). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Paper]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA. https://doi.org/10.1557/proc-358-1005 |
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