<  Back to the Polytechnique Montréal portal

Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs

M. Beaudoin, Rémo A. Masut, L. Isnard, Patrick Desjardins, A. Bensaada, Gilles L'Espérance and R. Leonelli

Paper (1994)

An external link is available for this item
Additional Information: Nom historique du département: Département de métallurgie et de génie des matériaux
Department: Department of Engineering Physics
Research Center: (CM)² - Centre for Characterization and Microscopy of Materials
GCM - Thin Film Physics and Technology Research Group
PolyPublie URL: https://publications.polymtl.ca/32594/
Conference Title: Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society
Conference Location: Boston, USA
Conference Date(s): 1994-11-29 - 1994-12-02
Publisher: Materials Research Society
DOI: 10.1557/proc-358-1005
Official URL: https://doi.org/10.1557/proc-358-1005
Date Deposited: 18 Apr 2023 15:24
Last Modified: 05 Apr 2024 11:23
Cite in APA 7: Beaudoin, M., Masut, R. A., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (1994, November). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Paper]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA. https://doi.org/10.1557/proc-358-1005

Statistics

Dimensions

Repository Staff Only

View Item View Item