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Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by X-ray photoelectron spectroscopy

M. Beaudoin, C. J. Arsenault, R. Izquierdo and Michel Meunier

Article (1989)

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Department: Department of Engineering Physics
Research Center: GCM - Thin Film Physics and Technology Research Group
PolyPublie URL: https://publications.polymtl.ca/35692/
Journal Title: Applied Physics Letters (vol. 55, no. 25)
Publisher: American Institute of Physics
DOI: 10.1063/1.102299
Official URL: https://doi.org/10.1063/1.102299
Date Deposited: 18 Apr 2023 15:26
Last Modified: 05 Apr 2024 11:28
Cite in APA 7: Beaudoin, M., Arsenault, C. J., Izquierdo, R., & Meunier, M. (1989). Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by X-ray photoelectron spectroscopy. Applied Physics Letters, 55(25), 2640-2640. https://doi.org/10.1063/1.102299

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