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Nitrogen incorporation and lattice constant of strained dilute GaAs₁₋ₓNₓ layers on GaAs (001): an ab initio study

N. Shtinkov, Patrick Desjardins, Rémo A. Masut and M. Cote

Article (2006)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/22511/
Journal Title: Physical Review. B, Condensed Matter and Materials Physics (vol. 74, no. 3)
Publisher: American Physical Society
DOI: 10.1103/physrevb.74.035211
Official URL: https://doi.org/10.1103/physrevb.74.035211
Date Deposited: 18 Apr 2023 15:18
Last Modified: 05 Apr 2024 11:06
Cite in APA 7: Shtinkov, N., Desjardins, P., Masut, R. A., & Cote, M. (2006). Nitrogen incorporation and lattice constant of strained dilute GaAs₁₋ₓNₓ layers on GaAs (001): an ab initio study. Physical Review. B, Condensed Matter and Materials Physics, 74(3), 035211 (8 pages). https://doi.org/10.1103/physrevb.74.035211

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