Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment

A. Amassian, M. Svec, Patrick Desjardins et Ludvik Martinu

Article de revue (2006)

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Département:	Département de génie physique
URL de PolyPublie:	https://publications.polymtl.ca/23452/
Titre de la revue:	Journal of vacuum science and technology. A, Vacuum, surfaces, and films (vol. 24, no 6)
Maison d'édition:	American Vacuum Society
DOI:	10.1116/1.2348642
URL officielle:	https://doi.org/10.1116/1.2348642
Date du dépôt:	18 avr. 2023 15:17
Dernière modification:	05 avr. 2024 11:08

Citer en APA 7:	Amassian, A., Svec, M., Desjardins, P., & Martinu, L. (2006). Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 24(6), 2061-2069. https://doi.org/10.1116/1.2348642
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