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Items where Author is "Moutanabbir, Oussama"

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Number of items: 175.

A

Atalla, M. R. M., Assali, S., Daligou, G., Attiaoui, A., Koelling, S., Daoust, P., & Moutanabbir, O. (2024). Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission. ACS Photonics, 4c00033 (7 pages). External link

Atalla, M. R. M., Lemieux-Leduc, C., Assali, S., Koelling, S., Daoust, P., & Moutanabbir, O. (2024). Extended short-wave infrared high-speed all-GeSn PIN photodetectors on silicon. APL Photonics, 9(5), 056103 (8 pages). External link

Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2023). Dark current in monolithic extended-SWIR GeSn PIN photodetectors. Applied Physics Letters, 122(3), 031103 (6 pages). External link

Atalla, M. R. M., Kim, Y., Assali, S., Burt, D., Nam, D., & Moutanabbir, O. (2023). Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power. ACS Photonics, 10(5), 1649-1653. External link

Andelic, M., Pofelski, A., Koelling, S., Assali, S., Luo, L., Moutanabbir, O., & Botton, G. (2023, April). Local Bandgap Measurement of Core/Shell Ge/GeSn Nanowires Employing Electron Energy Loss Spectroscopy in Scanning Transmission Electron Microscopy [Paper]. MRS Spring Meeting, San Francisco, California. External link

Attiaoui, A., Daligou, G., Assali, S., Skibitzki, O., Schroeder, T., & Moutanabbir, O. (2023). Polarization-tuned fano resonances in all-dielectric short-wave infrared metasurface. Advanced Materials, 35(28), 2300595 (9 pages). External link

Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A., & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 175304 (9 pages). External link

Attiaoui, A., Fettu, G., Mukherjee, S., Bauer, M., & Moutanabbir, O. (2022). Electronic signature of subnanometer interfacial broadening in heterostructures. Nano Letters, 22(17), 7080-7086. External link

Attiaoui, A., Assali, S., Luo, L., Daligou, G., Atala, M., Koelling, S., & Moutanabbir, O. (2022, July). Group-IV GeSn nanophotonics [Paper]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). External link

Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2022). High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response. ACS Photonics, 9(4), 1425-1433. External link

Assali, S., Attiaoui, A., Vecchio, P. D., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2022). A Light-Hole Germanium Quantum Well on Silicon. Advanced Materials, 34(27), e2201192 (11 pages). External link

Assali, S., Attiaoui, A., Koelling, S., Atalla, M. R. M., Kumar, A., Nicolas, J., Chowdhury, F. A., Lemieux-Leduc, C., & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. External link

Atalla, M., Assali, S., Koelling, S., Daligou, G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S., & Moutanabbir, O. (2022, May). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs [Paper]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). External link

Abdi, S., Assali, S., Atalla, M. R. M., Koelling, S., Warrender, J. M., & Moutanabbir, O. (2022). Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11. Journal of Applied Physics, 131(10), 105304 (9 pages). External link

Andelic, M., Pofelski, A., Assali, S., Koelling, S., Luo, L., Moutanabbir, O., & Botton, G. A. (2022). Structural and Chemical Characterization of Ge/GeSn Core/Shell Nanowires. Microscopy and Microanalysis, 28(S1), 2430-2431. External link

Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (2021). All-Group IV Transferable Membrane Mid-Infrared Photodetectors. Advanced Functional Materials, 31(3), 9 pages. External link

Attiaoui, A., Bouthillier, E., Daligou, G., Kumar, A., Assali, S., & Moutanabbir, O. (2021). Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays. Physical Review Applied, 15(1), 014034 (11 pages). External link

Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (2021, May). GeSn membrane mid-infrared photodetectors [Paper]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). External link

Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J. E. M., & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. External link

An, Q., Moutanabbir, O., & Guo, H. (2021). Moire patterns of twisted bilayer antimonene and their structural and electronic transition. Nanoscale, 132(31), 13427-13436. External link

Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (2021, May). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells [Paper]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). External link

An, Q., Fortin-Deschênes, M., Yu, G., Moutanabbir, O., & Guo, H. (2020). Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys. Journal of Applied Physics, 127(2), 12 pages. External link

Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (2020, October). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Paper]. ECS Meeting Abstracts. External link

Assali, S., Attiaoui, A., Atalla, M. R. M., Dijkstra, A., Aashish, K., Mukherjee, S., Abdi, S., & Moutanabbir, O. (2020, May). Epitaxial GeSn and its integration in MIR optoelectronics [Paper]. Science and Innovations 2020 (CLEO), Washington, D.C.. External link

Abdi, S., Atalla, M., Assali, S., Kumar, A., Groell, L., Koelling, S., & Moutanabbir, O. (2020). Towards Ultra-Low Specific Contact Resistance on P-Type and N-Type Narrow Bandgap GeSn Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1322-1322. External link

Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, October). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Abstract]. 236th ECS Meeting, Atlanta, GA. Published in ECS Meeting Abstracts, MA2019-02(25). External link

Assali, S., Nicolas, J., & Moutanabbir, O. (2019). Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. Journal of Applied Physics, 125(2). External link

Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, May). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics [Paper]. Conference on Lasers and Electro-Optics, San Jose, California. External link

Assali, S., Elsayed, M., Nicolas, J., Liedke, M. O., Wagner, A., Butterling, M., Krause-Rehberg, R., & Moutanabbir, O. (2019). Vacancy complexes in nonequilibrium germanium-tin semiconductors. Applied Physics Letters, 114(25), 6 pages. External link

Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A., & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages. External link

Attiaoui, A., Wirth, S., Blanchard-Dionne, A.-P., Meunier, M., Hartmann, J. M., Buca, D., & Moutanabbir, O. (2018). Extreme IR absorption in group IV-SiGeSn core-shell nanowires. Journal of Applied Physics, 123(22), 13 pages. External link

Abboud, Z., Chagnon, D., Assali, S., Fortin-Deschenes, M., Coia, C., & Moutanabbir, O. (2018, September). Hermetic Wafer-Level Packaging of Microbolometers for Uncooled Thermal Cameras [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(29). External link

Attiaoui, A., Assali, S., Nicolas, J., & Moutanabbir, O. (2018, September). Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link

Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A., & Moutanabbir, O. (2018, September). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link

Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages. External link

Abboud, Z., & Moutanabbir, O. (2017). Temperature-dependent in situ studies of volatile molecule trapping in low temperature-activated Zr alloy-based getters. Journal of Physical Chemistry C, 121(6), 3381-3396. External link

Attiaoui, A., & Moutanabbir, O. (2014). Indirect-to-direct band gap transition in relaxed and strained Ge 1-x-ySixSny ternary alloys. Journal of Applied Physics, 116(6). External link

Attiaoui, A., & Moutanabbir, O. (2014, October). Optical and electronic properties of GeSn and GeSiSn heterostructures and nanowires [Paper]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. External link

Attiaoui, A., & Moutanabbir, O. (2014). Optical and Electronic Properties of GeSn and GeSiSn Heterostructures and Nanowires. ECS Meeting Abstracts, MA2014-02(35), 1843-1843. External link

B

Burt, D., Joo, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain. Applied Physics Letters, 120(20), 7 pages. External link

Badawy, G., Zhang, B., Rauch, T., Momand, J., Koelling, S., Jung, J., Gazibegovic, S., Moutanabbir, O., Kooi, B. J., Botti, S., Verheijen, M. A., Frolov, S. M., & Bakkers, E. P. A. M. (2022). Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires. Advanced Science, 9(12), 2105722 (8 pages). External link

Burt, D., Jooa, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (2022, January). Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain [Paper]. Silicon Photonics XVII. External link

Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (2020). Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors. Semiconductor Science and Technology, 35(9), 9 pages. External link

Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (2018, September). Decoupling Strain and Composition Effects on Ge₁₋YSny Lattice Vibrations [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link

Balois, M. V., Hayazawa, N., Tarun, A., Kawata, S., Reiche, M., & Moutanabbir, O. (2014). Direct optical mapping of anisotropic stresses in nanowires using transverse optical phonon splitting. Nano Letters, 14(7), 3793-3798. External link

Blumtritt, H., Isheim, D., Senz, S., Seidman, D. N., & Moutanabbir, O. (2014). Preparation of nanowire specimens for laser-assisted atom probe tomography. Nanotechnology, 25(43). External link

Baumgart, H., & Moutanabbir, O. (2012, May). Heterointegration of compound III-V semiconductors by wafer bonding and layer splitting for optoelectronic applications [Paper]. 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan. External link

C

Carnio, B. N., Shahriar, B., Attiaoui, A., Atalla, M. R. M., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2024). Probing the infrared properties of a p-doped Ge\(_{0.938}\)Sn\(_{0.062}\) thin film via polarization-dependent FTIR spectroscopy. Applied Physics Letters, 124(7), 072102 (6 pages). External link

Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). CdSiP2: An emerging crystal for electro-optic sampling from terahertz to the infrared. ACS Applied Optical Materials, 1(5), 997-1003. External link

Carnio, B. N., Zhang, M., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Emission and sensing of high-frequency terahertz electric fields using a GaSe crystal. Optics Express, 31(2), 3304-3314. External link

Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Generation of 1732 THz radiation from a CdSiP2 crystal. Optics Letters, 48(5), 1200-1203. External link

Carnio, B. N., Zhang, M., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023, July). High terahertz frequency generation and detection using crystals exhibiting second-order nonlinear effects [Paper]. Optica Nonlinear Optics Topical Meeting 2023, Honolulu, Hawaii. External link

Carnio, B. N., Zhang, M., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Intra-pulse difference frequency generation in ZnGeP2 for high-frequency terahertz radiation generation. Scientific Reports, 13(1), 8 pages. External link

Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Methodology for computing Fourier-transform infrared spectroscopy interferograms. Applied Optics, 62(17), 4518-4523. External link

Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Nonlinear Photonic Waveguides: A Versatile Platform for Terahertz Radiation Generation (a Review). Laser & Photonics Reviews, 17(4), 19 pages. External link

Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023, July). Optical rectification and electro-optic sampling using pnictide and chalcogenide ternary crystals [Paper]. 2023 Nonlinear Optics (NLO 2023), Honolulu, HI, USA. External link

Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Terahertz Time-Domain Spectroscopy and Dispersive Fourier Transform Spectroscopy: Two Sides of the Same Coin. Journal of Infrared Millimeter and Terahertz Waves, 12 pages. External link

Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2022). The Coming Age of Pnictide and Chalcogenide Ternary Crystals in the Terahertz Frequency Regime. IEEE Transactions on Terahertz Science and Technology, 12(5), 433-445. External link

Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2022). Extracting the complex refractive index of an ultrathin layer at terahertz frequencies with no prior knowledge of substrate absorption loss. IEEE Transactions on Terahertz Science and Technology, 12(4), 385-391. External link

Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2022, July). Extracting the linear terahertz properties of thin films using complementary transmission and reflection measurements: Applied to GeSn thin films [Paper]. International Conference on Ultrafast Phenomena (UP) 2022, Montreal, Quebec. External link

Chen, M., Jung, Y., Burt, D., Kim, Y., Joo, H.-J., Zhang, L., Assali, S., Moutanabbir, O., Tan, C. S., & Nam, D. (2022, May). Low-Threshold Lasing in GeSnOI Microdisk Lasers with Reduced Defect Density [Paper]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). External link

Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., Elezzabi, A. Y., Sadwick, L. P., & Yang, T. (2022, January). A method based on complementary transmission and reflection measurements for extracting the optical properties of a thin film [Paper]. Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV, San Francisco, California, United States. External link

Cousineau, É., Mukherjee, S., Simone, A., Nicolas, J., & Moutanabbir, O. (2020). Lattice Vibrational Modes in Epitaxial Metastable Germanium-Tin Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1320-1320. External link

Ciano, C., Di Gaspare, L., Montanari, M., Persichetti, L., Baldassarre, L., Ortolani, M., Capellini, G., Skibitzki, O., Zöllner, M., Faist, J., Scalari, G., Stark, D., Paul, D. J., Rew, K., Moutanabbir, O., Mukherjee, S., Grange, T., Birner, S., Virgilio, M., & De Seta, M. (2019). n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser. ECS Transactions, 93(1), 63-66. External link

Chagnon, D., Abboud, Z., & Moutanabbir, O. (2017, August). In situ monitoring of microstructure and phase changes of AuSn solders for hermetic wafer-level packaging [Poster]. 18th Canadian Semiconductor Science and Technology Conference (CSSTC 2017), Waterloo, Ont.. External link

Chagnon, D., Pippel, E., Senz, S., & Moutanabbir, O. (2016). Metal Seed Loss Throughout the Nanowire Growth: Bulk Trapping and Surface Mass Transport. Journal of Physical Chemistry C, 120(5), 2932-2940. External link

Collette, M., Moutanabbir, O., & Champagne, A. R. (2015, May). Electronic transport in silicon nanowires with ordered stacking faults [Poster]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Unavailable

Chagnon, D., Isik, D., Levesque, P. L., Lewis, F., Caza, M.-È., Le, X. T., Poirier, J.-S., Michel, D., Larger, R., & Moutanabbir, O. (2014). Materials Issues in Hermetic Wafer Level Packaging Using Au Thermocompression and Au-Sn Transient Liquid Phase Bonding. Meeting abstracts, MA2014-02(34), 1741-1741. External link

Chagnon, D., Isik, D., Levesque, P., Lewis, F., Caza, M.-E., Le, X. T., Poirier, J.-S., Michel, D., Larger, R., & Moutanabbir, O. (2014, July). Metal-assisted hermetic wafer-level packaging [Paper]. 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, Japan. External link

Chen, P., Zhang, J. J., Feser, J. P., Pezzoli, F., Moutanabbir, O., Cecchi, S., Isella, G., Gemming, T., Baunack, S., Chen, G., Schmidt, O. G., & Rastelli, A. (2014). Thermal transport through short-period SiGe nanodot superlattices. Journal of Applied Physics, 115(4). External link

D

Daligou, G., Soref, R., Attiaoui, A., Hossain, J., Atalla, M. R. M., Vecchio, P. D., & Moutanabbir, O. (2023). Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon. IEEE Journal of Photovoltaics, 13(5), 728-735. External link

Del Vecchio, P., & Moutanabbir, O. (2023). Light-hole gate-defined spin-orbit qubit. Physical Review B, 107(16), L161406 (6 pages). External link

Daligou, G., Attiaoui, A., Assali, S., Del Vecchio, P., & Moutanabbir, O. (2023). Radiative carrier lifetime in Ge₁-xSnₓ midinfrared emitters. Physical Review Applied, 20(6), 8 pages. External link

Del Vecchio, P., & Moutanabbir, O. (2022, March). Electric-dipole spin resonance for light-holes in germanium quantum well [Paper]. 2022 APS March Meeting, Chicago, Illinois. External link

Del Vecchio, P., & Moutanabbir, O. (2022, May). Electric-Dipole Spin Resonance for Light-Holes in Germanium Quantum Well [Presentation]. In MRS Spring Meeting. External link

Daligou, G., Assali, S., Attiaoui, A., Bouthillier, É., & Moutanabbir, O. (2022, July). Radiative carrier lifetime in GeSn mid-infrared emitters [Paper]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). External link

Del Vecchio, P., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (2020). Vanishing Zeeman energy in a two-dimensional hole gas. Physical Review B, 102(11), 12 pages. External link

Dadwal, U., Kumar, P., Moutanabbir, O., Reiche, M., & Singh, R. (2014). Effect of implantation temperature on the H-induced microstructural damage in AlN. Journal of Alloys and Compounds, 588, 300-304. External link

E

Essig, S., Moutanabbir, O., Wekkeli, A., Nahme, H., Oliva, E., Bett, A. W., & Dimroth, F. (2013). Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity. Journal of Applied Physics, 113(20). External link

F

Fettu, G., Sipe, J. E., & Moutanabbir, O. (2023). Mid-infrared optical spin injection and coherent control. Physical Review B, 107(16), 165202 (8 pages). External link

Fettu, G., Sipe, J. E., Moutanabbir, O., Agio, M., Soci, C., & Sheldon, M. T. (2021, August). Optical injection of spin current in direct bandgap GeSn [Presentation]. In SPIE Nanoscience + Engineering, San Diego, California, United States. External link

Fortin-Deschênes, M., & Moutanabbir, O. (2020, May). (Invited) Growth of Van Der Waals Materials: New Insights from Real-Time Studies [Abstract]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montréal, Canada. Published in ECS Meeting Abstracts, MA2020-01(B06 : 2D L). External link

Fettu, G., Attiaoui, A., Samik, M., Bauer, M., & Moutanabbir, O. (2020). Electronic and Optical Properties of Short-Period Si/Sige Superlattices: Effects of Interfacial Atomic-Scale Roughness. ECS Meeting Abstracts, MA2020-01(G01 : Sili), 1305-1305. External link

Fortin-Deschenes, M., Zschiesche, H., Mente, T. O., Locatelli, A., Jacobberger, R. M., Genuzio, F., Lagos, M. J., Biswas, D., Jozwiak, C., Miwa, J. A., Ulstrup, S., Bostwick, A., Rotenberg, E., Arnold, M. S., Botton, G. A., & Moutanabbir, O. (2020). Pnictogens allotropy and phase transformation during van der waals growth. Nano Letters, 20(11), 8258-8266. External link

Fortin-Deschênes, M., Waller, O., An, Q., Lagos, M. J., Botton, G. A., Guo, H., & Moutanabbir, O. (2019). 2D Antimony–Arsenic Alloys. Small, 16(3), 7 pages. External link

Fortin-Deschênes, M., Jacobberger, R. M., Deslauriers, C.-A., Waller, O., Bouthillier, É., Arnold, M. S., & Moutanabbir, O. (2019). Dynamics of Antimonene-Graphene Van Der Waals Growth. Advanced Materials, 31(21), e1900569 (7 pages). External link

Fortin-Deschenes, M., & Moutanabbir, O. (2018). Recovering the semiconductor properties of the epitaxial group V 2D materials antimonene and arsenene. Journal of Physical Chemistry C, 122(16), 9162-9168. External link

Fortin-Deschênes, M., Waller, O., Hébert, A., & Moutanabbir, O. (2017, April). Epitaxial group V 2D materials : growth and electronic properties [Poster]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona. Unavailable

Fortin-Deschênes, M., Lévesque, P., Martel, R., & Moutanabbir, O. (2017, April). Mechanisms and dynamics of two-dimensional black phosphorus sublimation [Poster]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona. Unavailable

Fortin-Deschenes, M., Waller, O., Mentes, T. O., Locatelli, A., Mukherjee, S., Genuzio, F., Levesque, P. L., Hebert, A., Martel, R., & Moutanabbir, O. (2017). Synthesis of antimonene on germanium. Nano Letters, 17(8), 4970-4975. External link

Fortin-Deschenes, M., Levesque, P. L., Martel, R., & Moutanabbir, O. (2016). Dynamics and mechanisms of exfoliated black phosphorus sublimation. Journal of Physical Chemistry Letters, 7(9), 1667-1674. External link

Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17). External link

Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., Wirths, S., Pippel, E., Mussler, G., Hartmann, J. M., Mantl, S., Desjardins, P., Buca, D., & Moutanabbir, O. (2015, May). In situ studies of germanium-tin and silicon-germanium-tin dynamics of phase separation [Poster]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Unavailable

Fournier-Lupien, J.-H., Chagnon, D., Levesque, P., AlMutairi, A.A. A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.-M., Mantl, S., Buca, D., & Moutanabbir, O. (2014, October). In situ studies of germanium-tin and silicon-germanium-tin thermal stability [Paper]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. External link

Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., AlMutairi, A.A. A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.-M., Mantl, S., Buca, D., & Moutanabbir, O. (2014). In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability. ECS Meeting Abstracts, MA2014-02(35), 1846-1846. External link

Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26). External link

G

Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (2022, September). Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers [Paper]. International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2022), Turin, Italy. External link

Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M., Belyanin, A. A., & Smowton, P. M. (2021, March). Atomic-scale modeling of interface roughness scattering in quantum cascade lasers [Paper]. Novel In-Plane Semiconductor Lasers XX. External link

Groell, L., Attiaoui, A., Assali, S., & Moutanabbir, O. (2021). Combined iodine- and sulfur-based treatments for an effective passivation of GeSn surface. Journal of Physical Chemistry C, 125(17), 9516-9525. External link

Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (2020). Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering. Physical Review Applied, 13(4), 14 pages. External link

Groell, L., Abdi, S., Assali, S., Atalla, M., Attiaoui, A., & Moutanabbir, O. (2020, May). Germanium Tin Surface Passivation and Its Effect on the Optoelectronic Performances [Paper]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montreal, Canada. External link

H

Hahnel, A., Reiche, M., Moutanabbir, O., Blumtritt, H., Geisler, H., Hontschel, J., & Engelmann, H.-J. (2012). Improving accuracy and precision of strain analysis by energy-filtered nanobeam electron diffraction. Microscopy and Microanalysis, 18(1), 229-40. External link

J

Joo, H.-J., Kim, Y., Burt, D., Yung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (2022, January). 1D photonic crystal GeSn-on-insulator nanobeam laser [Paper]. Silicon Photonics XVII, San Francisco, CA, USA (9 pages). External link

Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Luo, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Son, B., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Gesnoi Laser Technology for Photonic-Integrated Circuits. ECS Meeting Abstracts, MA2022-02(32), 1168-1168. External link

Jung, Y., Burt, D., Zhang, L., Kim, Y., Joo, H.-J., Chen, M., Assali, S., Moutanabbir, O., Tan, C. S., & Nam, D. (2022). Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density. Photonics Research, 10(6), 6 pages. External link

Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (2021). 1D photonic crystal direct bandgap GeSn-on-insulator laser. Applied Physics Letters, 119(20), 201101 (6 pages). External link

Jacobberger, R. M., Murray, E. A., Fortin-Deschênes, M., Göltl, F., Behn, W. A., Krebs, Z. J., Levesque, P. L., Savage, D. E., Smoot, C., Lagally, M. G., Desjardins, P., Martel, R., Brar, V., Moutanabbir, O., Mavrikakis, M., & Arnold, M. S. (2019). Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale, 11(11), 4864-4875. External link

Jung, D., Faucher, J., Mukherjee, S., Akey, A., Ironside, D. J., Cabral, M., Sang, X., Lebeau, J., Bank, S. R., Buonassisi, T., Moutanabbir, O., & Lee, M. L. (2017). Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications, 8(1), 14204 (7 pages). Available

K

Kim, Y., Assali, S., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Shi, X., Burt, D., Ikonic, Z., Nam, D., & Moutanabbir, O. (2023). Short-wave infrared cavity resonances in a single GeSn nanowire. Nature Communications, 14(1), 4393 (7 pages). Available

Koelling, S., Stehouwer, L. E. A., Paquelet Wuetz, B., Scappucci, G., & Moutanabbir, O. (2023). Three-dimensional atomic-scale tomography of buried semiconductor heterointerfaces. Advanced Materials: Interfaces, 10(3), 2201189. External link

Kim, Y.-M., Assali, S., Jung, Y., Burt, D., Zhang, L., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Atalla, M. R. M., Ikonic, Z., Tan, C. S., Moutanabbir, O., & Nam, D. (2022). Evolution of Gesn Lasers Towards Photonic Integration into Practical Applications. Meeting abstracts, MA2022-02(32), 1167-1167. External link

Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O., & Nam, D. (2022). Enhanced GeSn Microdisk Lasers Directly Released on Si. Advanced Optical Materials, 10(2), 2101213 (7 pages). External link

Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O., & Nam, D. (2022, January). Improved GeSn microdisk lasers directly sitting on Si [Paper]. Silicon Photonics XVII, San Francisco, CA, USA (7 pages). External link

Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (2020, October). (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Paper]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, Honolulu, Hawaii, USA. External link

Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Paper]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). Published in ECS Transactions, 98(5). External link

L

Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Daligou, G., & Moutanabbir, O. (2024). Mid-infrared Imaging Using Strain-Relaxed Ge1-x Sn x Alloys Grown on 20 nm Ge Nanowires. Nano Letters, 24(16), 4979 -4986-4979 -4986. External link

Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Daligou, G., & Moutanabbir, O. (2024). Mid-infrared Imaging Using Strain-Relaxed Ge1–xSnx Alloys Grown on 20 nm Ge Nanowires. Nano Letters, 8-8. External link

Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., & Moutanabbir, O. (2024). Mid-Infrared Top-Gated Ge<inf>0.82</inf>Sn<inf>0.18</inf> Nanowire Phototransistors. Advanced Optical Materials, 2400096 (7 pages). External link

Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Daoust, P., Daligou, G., Brodeur, J., Kéna-Cohen, S., Peter, Y.-A., & Moutanabbir, O. (2023, November). Transfer-printing of GeSn membranes for broadband photodetection in the extended short-wave infrared [Paper]. IEEE Photonics Conference (IPC 2023), Orlando, FL, USA (2 pages). External link

Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., Attiaoui, A., Daligou, G., Martí, S., Arbiol, J., & Moutanabbir, O. (2022). Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires. ACS Photonics, 9(3), 914-921. External link

Losert, M. P., Wuetz, B. P., Koelling, S., Stehouwer, L., Zwerver, A.-M. J., Philips, S. G., Madzik, M. G., Xue, X., Zheng, G., Lodari, M., Amitonov, S. V., Samkharadze, N., Sammak, A., Vanderspyen, L., Rahman, R., Coppersmith, S. N., Moutanabbir, O., Friesen, M. G., & Scappucci, G. (2022, March). Increasing the valley splitting in Si/SiGe heterostructures by exploiting atomic concentration fluctuations [Paper]. 2022 APS March Meeting, Chicago, Illinois. External link

Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2022, November). Photodetection from SWIR to MWIR with Ge/GeSn core/shell nanowires [Paper]. IEEE Photonics Conference (IPC 2022), Vancouver, BC, Canada (2 pages). External link

Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., & Moutanabbir, O. (2020). Tunable Shortwave Infrared and Midwave Infrared Optoelectronics in Germanium/Germanium Tin Core/Shell Nanowires. Meeting abstracts, MA2020-01(22), 1321-1321. External link

Lewis, J. B., Isheim, D., Moutanabbir, O., Floss, C., & Seidman, D. N. (2015, July). Standardization and correction of artifacts in atom-probe tomographic analysis of Allende nanodiamonds [Abstract]. 78th Annual Meeting of the Meteoritical Society, Berkeley, Calif. (1 page). Published in Meteoritics & Planetary Science, 50(S1). External link

Lee, S.-M., Pippel, E., Moutanabbir, O., Kim, J.-H., Lee, H.-J., & Knez, M. (2014). In Situ Raman Spectroscopic Study of Al-Infiltrated Spider Dragline Silk under Tensile Deformation. ACS Applied Materials & Interfaces, 6(19), 16827-16834. External link

M

Moutanabbir, O., Assali, S., Attiaoui, A., Daligou, G., Daoust, P., Vecchio, P. D., Koelling, S., Luo, L., & Rotaru, N. (2023). Nuclear Spin-Depleted, Isotopically Enriched⁷⁰Ge/²⁸ Si⁷⁰Ge Quantum Wells. Advanced Materials, 2305703 (7 pages). External link

Moutanabbir, O., & Fortin-Deschênes, M. (2022). (Invited) Van Der Waals Growth and in Situ Studies of Two-Dimensional Pnictogens. Meeting abstracts, MA2022-01(12), 853-853. External link

Moutanabbir, O., Del Vecchio, P., Attiaoui, A., Fettu, G., Rotaru, N., & Assali, S. (2022). (Invited) Optoelectronic Quantum Information Processing: An All-Group IV Integrated Platform. ECS Meeting Abstracts, MA2022-02(32), 1207-1207. External link

Moutanabbir, O., & Fortin-Deschênes, M. (2021). (Invited) Two-Dimensional Pnictogens: Van Der Waals Growth, Stability, and Phase Transformation. ECS Meeting Abstracts, MA2021-01(14), 655-655. External link

Mukherjee, S., Assali, S., & Moutanabbir, O. (2021). Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects. Nano Letters, 21(23), 9882-9888. External link

Mukherjee, S., Wajs, M., De la Mata, M., Givan, U., Senz, S., Arbiol, J., Francoeur, S., & Moutanabbir, O. (2021). Disentangling phonon channels in nanoscale heat transport. Physical Review B, 104(7), 075429 (7 pages). External link

Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S. Q., Chelnokov, A., Buca, D., & Nam, D. (2021). Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 110502 (10 pages). External link

Mukherjee, S., Attiaoui, A., Bauer, M., & Moutanabbir, O. (2020). 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices. ACS Applied Materials and Interfaces, 12(1), 1728-1736. External link

Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (2019, May). Germanium-tin semiconductors : a versatile silicon-compatible platform [Paper]. VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. External link

Montanari, M., Ciano, C., Persichetti, L., Di Gaspare, L., Virgilio, M., Capellini, G., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Paul, D. J., Grange, T., Birner, S., Scuderi, M., Nicotra, G., Moutanabbir, O., Mukherjee, S., Baldassarre, L., ... De Seta, M. (2019, September). High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers [Paper]. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), Paris, France (2 pages). External link

Mukherjee, S., Bauer, M., Attiaoui, A., & Moutanabbir, O. (2018, September). Atomistic and Optical Properties of Group IV Ultrathin Superlattices [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link

Mamun, M. A., Tapily, K., Moutanabbir, O., Baumgart, H., & Elmustafa, A. A. (2018). Effect of hydrogen implantation on the mechanical properties of AlN throughout ion-induced splitting. ECS Journal of Solid State Science and Technology, 7(4), P180-P184. External link

Mukherjee, S., Assali, S., & Moutanabbir, O. (2018). Group IV nanowires for carbon-free energy conversion. Semiconductors and Semimetals, 98, 151-229. External link

Mukherjee, S., Nateghi, N., Jacobberger, R. M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M. S., & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8), 1705592. External link

Moutanabbir, O., & Mukherjee, S. (2018, September). Isotopically Programmed Group IV Semiconductors: A Versatile Platform for Quantum Technologies [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link

Mukherjee, S., Givan, U., Senz, S., De la Mata, M., Arbiol, J., & Moutanabbir, O. (2018). Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder. Nano Letters, 18(5), 3066-3075. External link

Mukherjee, S., Nateghi, N., Jacobberger, R., Mata, M., Arbiol, J., Coenen, T., Way, A., Arnold, M., & Moutanabbir, O. (2017, April). Light emission from InP/graphene hybrid epitaxial structures [Poster]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona. Unavailable

Mukherjee, S., Kodali, N., Isheim, D., Wirths, S., Hartmann, J. M., Buca, D., Seidman, D. N., & Moutanabbir, O. (2017). Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors. Physical Review B, 95(16), 5 pages. External link

Moutanabbir, O., Isheim, D., Zugang, M., & Seidman, D. N. (2016). Evidence of sub-10 nm aluminum-oxygen precipitates in silicon. Nanotechnology, 27(20), 7 pages. External link

Mukherjee, S., Watanabe, H., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2016). Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions. Nano Letters, 16(2), 1335-1344. External link

Mukherjee, S., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2016). Mapping isotopes in nanoscale and quantum materials using atom probe tomography. Microscopy and Microanalysis, 22(S3), 652-653. External link

Mukherjee, S., Attiaoui, A., Watanabe, H., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2015, May). 3D atom-by-atom mapping of emerging group IV semiconductors [Poster]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Unavailable

Mukherjee, S., Givan, U., Senz, S., Bergeron, A., Francoeur, S., De La Mata, M., Arbiol, J., Sekiguchi, T., Itoh, K. M., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2015). Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters, 15(6), 3885-3893. External link

Moutanabbir, O. (2014). Invited: Heterointegration of Semiconductors: Challenges and Opportunities. Meeting abstracts, MA2014-02(34), 1719-1719. External link

Moutanabbir, O., Isheim, D., Blumtritt, H., Senz, S., Pippel, E., & Seidman, D. N. (2013). Colossal injection of catalyst atoms into silicon nanowires. Nature, 496(7443), 78-82. External link

Moutanabbir, O., Ratto, F., Heun, S., Scheerschmidt, K., Locatelli, A., & Rosei, F. (2012). Dynamic Probe of Atom Exchange During Monolayer Growth. Physical Review B, 85(20). External link

Moutanabbir, O. (2011). Group-IV Epitaxial Quantum Dots: Growth Subtleties Unveiled Through Stable Isotope Nanoengineering. Science of Advanced Materials, 3(3), 312-321. External link

N

Nicolas, J., Assali, S., Mukherjee, S., Lotnyk, A., & Moutanabbir, O. (2020). Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn. Crystal Growth and Design, 20(5), 3493-3498. External link

Nateghi, N., Samik, M., Cardinal, D., Jacobberger, R. M., Way, A. J., de la Mata, M., Martel, R., Desjardins, P., Arbiol, J., Arnold, M. S., & Moutanabbir, O. (2020). Van Der Waals Growth of III-V Semiconductors on Graphene. ECS Meeting Abstracts, MA2020-01(B06 : 2D L), 835-835. External link

Nateghi, N., Mukherjee, S., Choubak, S., Nguyen, M., Lévesque, P., Martel, R., Desjardins, P., & Moutanabbir, O. (2015, May). Growth of III-V semiconductors on silicon oxide/silicon using graphene interlayer [Poster]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Unavailable

P

Paquelet Wuetz, B., Losert, M. P., Koelling, S., Stehouwer, L. E. A., Zwerver, A.-M. J., Philips, S. G. J., Mądzik, M. T., Xue, X., Zheng, G., Lodari, M., Amitonov, S. V., Samkharadze, N., Sammak, A., Vandersypen, L. M. K., Rahman, R., Coppersmith, S. N., Moutanabbir, O., Friesen, M., & Scappucci, G. (2022). Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots. Nature Communications, 13(1), 7730 (8 pages). External link

Perla, P., Faustmann, A., Kolling, S., Zellekens, P., Deacon, R., Fonseka, H. A., Kolzer, J., Sato, Y., Sanchez, A. M., Moutanabbir, O., Ishibashi, K., Grutzmacher, D., Lepsa, M. I., & Schapers, T. (2022). Te-doped selective-area grown InAs nanowires for superconducting hybrid devices. Physical Review Materials, 6(2), 024602 (9 pages). External link

Persichetti, L., Montanari, M., Ciano, C., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Mukherjee, S., Moutanabbir, O., Capellini, G., Virgilio, M., & De Seta, M. (2020). Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells. Crystals, 10(3), 179 (13 pages). External link

Persichetti, L., Ciano, C., Virgilio, M., Montanari, M., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zöllner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Rew, K., Paul, D. J., Mukherjee, S., Moutanabbir, O., Scuderi, M., Nicotra, G., Grange, T., ... Deschler, F. (2019, August). Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) [Presentation]. In Physical Chemistry of Semiconductor Materials and Interfaces XVIII, San Diego, CA, USA. External link

Q

Qin, Y., Vogelgesang, R., Eßlinger, M., Sigle, W., Van Aken, P., Moutanabbir, O., & Knez, M. (2012). Bottom-up tailoring of plasmonic nanopeapods making use of the periodical topography of carbon nanocoil templates. Advanced Functional Materials, 22(24), 5157-5165. External link

R

Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O., & Mahapatra, S. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of Physics D: Applied Physics, 54(18), 185105 (10 pages). External link

S

Soref, R. A., de Leonardis, F., Daligou, G., & Moutanabbir, O. (2024). Directed high-energy infrared laser beams for photovoltaic generation of electric power at remote locations. APL energy, 2(2), 026101 (13 pages). Available

Singh, S., Mukherjee, S., Mukherjee, S., Assali, S., Luo, L., Das, S., Moutanabbir, O., & Ray, S. K. (2022). Ge-Ge0.92Sn0.08 core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication. Applied Physics Letters, 120(17). External link

Schellingerhout, S. G., de Jong, E. J., Gomanko, M., Guan, X., Jiang, Y., Hoskam, M. S. M., Jung, J., Koelling, S., Moutanabbir, O., Verheijen, M. A., Frolov, S. M., & Bakkers, E. P. A. M. (2022). Growth of PbTe nanowires by molecular beam epitaxy. Materials for Quantum Technology, 2(1), 015001. External link

Sahamir, S. R., Said, S. M., Sabri, M. F. M., Mahmood, M. S., Bin Kamarudin, M. A., & Moutanabbir, O. (2018). Studies on relation between columnar order and electrical conductivity in HAT6 discotic liquid crystals using temperature-dependent Raman spectroscopy and DFT calculations. Liquid Crystals, 45(4), 522-535. External link

Scheerschmidt, K., & Moutanabbir, O. (2015). Tracking atomic processes throughout the formation of heteroepitaxial interfaces. Crystal Research and Technology, 50(6), 490-498. External link

Senichev, A., Givan, U., Moutanabbir, O., Talalaev, V., & Werner, P. (2012, March). Near-field scanning optical microscopy of infrared emitting semiconductor nanostructures [Poster]. 76th Annual Meeting of the DPG and DPG Spring Meeting, Berlin, Germany. Unavailable

T

Tan, J. Z. J., Burt, D., Kim, Y.-M., Joo, H.-J., Chen, M., Shi, X., Zhang, L., Tan, C. S., Lim, K. Y. T., Quek, E., Huang, Y.-C., Assali, S., Moutanabbir, O., & Nam, D. (2022). Gesn Bonding Technology for Integrated Laser-on-Chip Photonics. Meeting abstracts, MA2022-02(32), 1177-1177. External link

Tarun, A., Hayazawa, N., Balois, M. V., Kawata, S., Reiche, M., & Moutanabbir, O. (2013). Stress redistribution in individual ultrathin strained silicon nanowires: a high-resolution polarized Raman study. New Journal of Physics, 15(5). Available

Tong, X., Qin, Y., Guo, X., Moutanabbir, O., Ao, X., Pippel, E., Zhang, L., & Knez, M. (2012). Enhanced catalytic activity for methanol electro-oxidation of uniformly dispersed nickel oxide nanoparticles-carbon nanotube hybrid materials. Small, 8(22), 3390-3395. External link

Tarun, A., Hayazawa, N., Ishitobi, H., Kawata, S., Reiche, M., & Moutanabbir, O. (2011). Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire. Nano Letters, 11(11), 4780-4788. External link

V

von den Driesch, N., Wirths, S., Troitsch, R., Mussler, G., Breuer, U., Moutanabbir, O., Grutzmacher, D., & Buca, D. (2020). Thermally activated diffusion and lattice relaxation in (Si)GeSn materials. Physical Review Materials, 4(3), 033604 (6 pages). External link

W

Wright, C., Mamun, M. A., Tapily, K., Moutanabbir, O., Gu, D., Baumgart, H., & Elmustafa, A. A. (2012, March). Nanomechanical properties of hydrogen implanted AIN for layer transfer by ion-induced splitting [Poster]. TMS 141st Annual Meeting and Exhibition, Orlando, Fl.. Unavailable

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Xiong, G., Moutanabbir, O., Reiche, M., Harder, R., & Robinson, I. (2018). Investigating strain in silicon-on-insulator nanostructures by coherent X-ray diffraction. In Fan, C., & Zhao, Z. (eds.), Synchrotron radiation in materials science (239-274). External link

Xiong, G., Moutanabbir, O., Reiche, M., Harder, R., & Robinson, I. (2014). Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures. Advanced Materials, 26(46), 7747-7763. Available

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