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Documents dont l'auteur est "Moutanabbir, Oussama"

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Nombre de documents: 169

A

Atalla, M. R. M., Assali, S., Daligou, G., Attiaoui, A., Koelling, S., Daoust, P., & Moutanabbir, O. (2024). Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission. ACS Photonics, 4c00033 (7 pages). Lien externe

Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2023). Dark current in monolithic extended-SWIR GeSn PIN photodetectors. Applied Physics Letters, 122(3), 031103 (6 pages). Lien externe

Atalla, M. R. M., Kim, Y., Assali, S., Burt, D., Nam, D., & Moutanabbir, O. (2023). Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power. ACS Photonics, 10(5), 1649-1653. Lien externe

Andelic, M., Pofelski, A., Koelling, S., Assali, S., Luo, L., Moutanabbir, O., & Botton, G. (avril 2023). Local Bandgap Measurement of Core/Shell Ge/GeSn Nanowires Employing Electron Energy Loss Spectroscopy in Scanning Transmission Electron Microscopy [Communication écrite]. MRS Spring Meeting, San Francisco, California. Lien externe

Attiaoui, A., Daligou, G., Assali, S., Skibitzki, O., Schroeder, T., & Moutanabbir, O. (2023). Polarization-tuned fano resonances in all-dielectric short-wave infrared metasurface. Advanced Materials, 35(28), 2300595 (9 pages). Lien externe

Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A., & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 175304 (9 pages). Lien externe

Attiaoui, A., Fettu, G., Mukherjee, S., Bauer, M., & Moutanabbir, O. (2022). Electronic signature of subnanometer interfacial broadening in heterostructures. Nano Letters, 22(17), 7080-7086. Lien externe

Attiaoui, A., Assali, S., Luo, L., Daligou, G., Atala, M., Koelling, S., & Moutanabbir, O. (juillet 2022). Group-IV GeSn nanophotonics [Communication écrite]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Lien externe

Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2022). High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response. ACS Photonics, 9(4), 1425-1433. Lien externe

Assali, S., Attiaoui, A., Vecchio, P. D., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2022). A Light-Hole Germanium Quantum Well on Silicon. Advanced Materials, 34(27), e2201192 (11 pages). Lien externe

Assali, S., Attiaoui, A., Koelling, S., Atalla, M. R. M., Kumar, A., Nicolas, J., Chowdhury, F. A., Lemieux-Leduc, C., & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. Lien externe

Atalla, M., Assali, S., Koelling, S., Daligou, G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S., & Moutanabbir, O. (mai 2022). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). Lien externe

Abdi, S., Assali, S., Atalla, M. R. M., Koelling, S., Warrender, J. M., & Moutanabbir, O. (2022). Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11. Journal of Applied Physics, 131(10), 105304 (9 pages). Lien externe

Andelic, M., Pofelski, A., Assali, S., Koelling, S., Luo, L., Moutanabbir, O., & Botton, G. A. (2022). Structural and Chemical Characterization of Ge/GeSn Core/Shell Nanowires. Microscopy and Microanalysis, 28(S1), 2430-2431. Lien externe

Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (2021). All-Group IV Transferable Membrane Mid-Infrared Photodetectors. Advanced Functional Materials, 31(3), 9 pages. Lien externe

Attiaoui, A., Bouthillier, E., Daligou, G., Kumar, A., Assali, S., & Moutanabbir, O. (2021). Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays. Physical Review Applied, 15(1), 014034 (11 pages). Lien externe

Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (mai 2021). GeSn membrane mid-infrared photodetectors [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Lien externe

Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J. E. M., & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. Lien externe

An, Q., Moutanabbir, O., & Guo, H. (2021). Moire patterns of twisted bilayer antimonene and their structural and electronic transition. Nanoscale, 132(31), 13427-13436. Lien externe

Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (mai 2021). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Lien externe

An, Q., Fortin-Deschênes, M., Yu, G., Moutanabbir, O., & Guo, H. (2020). Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys. Journal of Applied Physics, 127(2), 12 pages. Lien externe

Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (octobre 2020). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Communication écrite]. ECS Meeting Abstracts. Lien externe

Assali, S., Attiaoui, A., Atalla, M. R. M., Dijkstra, A., Aashish, K., Mukherjee, S., Abdi, S., & Moutanabbir, O. (mai 2020). Epitaxial GeSn and its integration in MIR optoelectronics [Communication écrite]. Science and Innovations 2020 (CLEO), Washington, D.C.. Lien externe

Abdi, S., Atalla, M., Assali, S., Kumar, A., Groell, L., Koelling, S., & Moutanabbir, O. (2020). Towards Ultra-Low Specific Contact Resistance on P-Type and N-Type Narrow Bandgap GeSn Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1322-1322. Lien externe

Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (octobre 2019). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Résumé]. 236th ECS Meeting, Atlanta, GA. Publié dans ECS Meeting Abstracts, MA2019-02(25). Lien externe

Assali, S., Nicolas, J., & Moutanabbir, O. (2019). Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. Journal of Applied Physics, 125(2). Lien externe

Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (mai 2019). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics [Communication écrite]. Conference on Lasers and Electro-Optics, San Jose, California. Lien externe

Assali, S., Elsayed, M., Nicolas, J., Liedke, M. O., Wagner, A., Butterling, M., Krause-Rehberg, R., & Moutanabbir, O. (2019). Vacancy complexes in nonequilibrium germanium-tin semiconductors. Applied Physics Letters, 114(25), 6 pages. Lien externe

Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A., & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages. Lien externe

Attiaoui, A., Wirth, S., Blanchard-Dionne, A.-P., Meunier, M., Hartmann, J. M., Buca, D., & Moutanabbir, O. (2018). Extreme IR absorption in group IV-SiGeSn core-shell nanowires. Journal of Applied Physics, 123(22), 13 pages. Lien externe

Abboud, Z., Chagnon, D., Assali, S., Fortin-Deschenes, M., Coia, C., & Moutanabbir, O. (septembre 2018). Hermetic Wafer-Level Packaging of Microbolometers for Uncooled Thermal Cameras [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(29). Lien externe

Attiaoui, A., Assali, S., Nicolas, J., & Moutanabbir, O. (septembre 2018). Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe

Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe

Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages. Lien externe

Abboud, Z., & Moutanabbir, O. (2017). Temperature-dependent in situ studies of volatile molecule trapping in low temperature-activated Zr alloy-based getters. Journal of Physical Chemistry C, 121(6), 3381-3396. Lien externe

Attiaoui, A., & Moutanabbir, O. (2014). Indirect-to-direct band gap transition in relaxed and strained Ge 1-x-ySixSny ternary alloys. Journal of Applied Physics, 116(6). Lien externe

Attiaoui, A., & Moutanabbir, O. (octobre 2014). Optical and electronic properties of GeSn and GeSiSn heterostructures and nanowires [Communication écrite]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. Lien externe

Attiaoui, A., & Moutanabbir, O. (2014). Optical and Electronic Properties of GeSn and GeSiSn Heterostructures and Nanowires. ECS Meeting Abstracts, MA2014-02(35), 1843-1843. Lien externe

B

Burt, D., Joo, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain. Applied Physics Letters, 120(20), 7 pages. Lien externe

Badawy, G., Zhang, B., Rauch, T., Momand, J., Koelling, S., Jung, J., Gazibegovic, S., Moutanabbir, O., Kooi, B. J., Botti, S., Verheijen, M. A., Frolov, S. M., & Bakkers, E. P. A. M. (2022). Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires. Advanced Science, 9(12), 2105722 (8 pages). Lien externe

Burt, D., Jooa, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (janvier 2022). Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain [Communication écrite]. Silicon Photonics XVII. Lien externe

Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (2020). Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors. Semiconductor Science and Technology, 35(9), 9 pages. Lien externe

Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (septembre 2018). Decoupling Strain and Composition Effects on Ge₁₋YSny Lattice Vibrations [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe

Balois, M. V., Hayazawa, N., Tarun, A., Kawata, S., Reiche, M., & Moutanabbir, O. (2014). Direct optical mapping of anisotropic stresses in nanowires using transverse optical phonon splitting. Nano Letters, 14(7), 3793-3798. Lien externe

Blumtritt, H., Isheim, D., Senz, S., Seidman, D. N., & Moutanabbir, O. (2014). Preparation of nanowire specimens for laser-assisted atom probe tomography. Nanotechnology, 25(43). Lien externe

Baumgart, H., & Moutanabbir, O. (mai 2012). Heterointegration of compound III-V semiconductors by wafer bonding and layer splitting for optoelectronic applications [Communication écrite]. 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan. Lien externe

C

Carnio, B. N., Shahriar, B., Attiaoui, A., Atalla, M. R. M., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2024). Probing the infrared properties of a <i>p</i>-doped Ge<sub>0.938</sub>Sn<sub>0.062</sub> thin film via polarization-dependent FTIR spectroscopy. Applied Physics Letters, 124(7), 072102 (6 pages). Lien externe

Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). CdSiP2: An emerging crystal for electro-optic sampling from terahertz to the infrared. ACS Applied Optical Materials, 1(5), 997-1003. Lien externe

Carnio, B. N., Zhang, M., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Emission and sensing of high-frequency terahertz electric fields using a GaSe crystal. Optics Express, 31(2), 3304-3314. Lien externe

Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Generation of 1732 THz radiation from a CdSiP2 crystal. Optics Letters, 48(5), 1200-1203. Lien externe

Carnio, B. N., Zhang, M., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (juillet 2023). High terahertz frequency generation and detection using crystals exhibiting second-order nonlinear effects [Communication écrite]. Optica Nonlinear Optics Topical Meeting 2023, Honolulu, Hawaii. Lien externe

Carnio, B. N., Zhang, M., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Intra-pulse difference frequency generation in ZnGeP2 for high-frequency terahertz radiation generation. Scientific Reports, 13(1), 8 pages. Lien externe

Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Methodology for computing Fourier-transform infrared spectroscopy interferograms. Applied Optics, 62(17), 4518-4523. Lien externe

Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Nonlinear Photonic Waveguides: A Versatile Platform for Terahertz Radiation Generation (a Review). Laser & Photonics Reviews, 17(4), 19 pages. Lien externe

Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Terahertz Time-Domain Spectroscopy and Dispersive Fourier Transform Spectroscopy: Two Sides of the Same Coin. Journal of Infrared Millimeter and Terahertz Waves, 12 pages. Lien externe

Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2022). The Coming Age of Pnictide and Chalcogenide Ternary Crystals in the Terahertz Frequency Regime. IEEE Transactions on Terahertz Science and Technology, 12(5), 433-445. Lien externe

Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2022). Extracting the complex refractive index of an ultrathin layer at terahertz frequencies with no prior knowledge of substrate absorption loss. IEEE Transactions on Terahertz Science and Technology, 12(4), 385-391. Lien externe

Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (juillet 2022). Extracting the linear terahertz properties of thin films using complementary transmission and reflection measurements: Applied to GeSn thin films [Communication écrite]. International Conference on Ultrafast Phenomena (UP) 2022, Montreal, Quebec. Lien externe

Chen, M., Jung, Y., Burt, D., Kim, Y., Joo, H.-J., Zhang, L., Assali, S., Moutanabbir, O., Tan, C. S., & Nam, D. (mai 2022). Low-Threshold Lasing in GeSnOI Microdisk Lasers with Reduced Defect Density [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). Lien externe

Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., Elezzabi, A. Y., Sadwick, L. P., & Yang, T. (janvier 2022). A method based on complementary transmission and reflection measurements for extracting the optical properties of a thin film [Communication écrite]. Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV, San Francisco, California, United States. Lien externe

Cousineau, É., Mukherjee, S., Simone, A., Nicolas, J., & Moutanabbir, O. (2020). Lattice Vibrational Modes in Epitaxial Metastable Germanium-Tin Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1320-1320. Lien externe

Ciano, C., Di Gaspare, L., Montanari, M., Persichetti, L., Baldassarre, L., Ortolani, M., Capellini, G., Skibitzki, O., Zöllner, M., Faist, J., Scalari, G., Stark, D., Paul, D. J., Rew, K., Moutanabbir, O., Mukherjee, S., Grange, T., Birner, S., Virgilio, M., & De Seta, M. (2019). n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser. ECS Transactions, 93(1), 63-66. Lien externe

Chagnon, D., Abboud, Z., & Moutanabbir, O. (août 2017). In situ monitoring of microstructure and phase changes of AuSn solders for hermetic wafer-level packaging [Affiche]. 18th Canadian Semiconductor Science and Technology Conference (CSSTC 2017), Waterloo, Ont.. Lien externe

Chagnon, D., Pippel, E., Senz, S., & Moutanabbir, O. (2016). Metal Seed Loss Throughout the Nanowire Growth: Bulk Trapping and Surface Mass Transport. Journal of Physical Chemistry C, 120(5), 2932-2940. Lien externe

Collette, M., Moutanabbir, O., & Champagne, A. R. (mai 2015). Electronic transport in silicon nanowires with ordered stacking faults [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible

Chagnon, D., Isik, D., Levesque, P. L., Lewis, F., Caza, M.-È., Le, X. T., Poirier, J.-S., Michel, D., Larger, R., & Moutanabbir, O. (2014). Materials Issues in Hermetic Wafer Level Packaging Using Au Thermocompression and Au-Sn Transient Liquid Phase Bonding. Meeting abstracts, MA2014-02(34), 1741-1741. Lien externe

Chagnon, D., Isik, D., Levesque, P., Lewis, F., Caza, M.-E., Le, X. T., Poirier, J.-S., Michel, D., Larger, R., & Moutanabbir, O. (juillet 2014). Metal-assisted hermetic wafer-level packaging [Communication écrite]. 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, Japan. Lien externe

Chen, P., Zhang, J. J., Feser, J. P., Pezzoli, F., Moutanabbir, O., Cecchi, S., Isella, G., Gemming, T., Baunack, S., Chen, G., Schmidt, O. G., & Rastelli, A. (2014). Thermal transport through short-period SiGe nanodot superlattices. Journal of Applied Physics, 115(4). Lien externe

D

Daligou, G., Soref, R., Attiaoui, A., Hossain, J., Atalla, M. R. M., Vecchio, P. D., & Moutanabbir, O. (2023). Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon. IEEE Journal of Photovoltaics, 13(5), 728-735. Lien externe

Del Vecchio, P., & Moutanabbir, O. (2023). Light-hole gate-defined spin-orbit qubit. Physical Review B, 107(16), L161406 (6 pages). Lien externe

Daligou, G., Attiaoui, A., Assali, S., Del Vecchio, P., & Moutanabbir, O. (2023). Radiative carrier lifetime in Ge₁-xSnₓ midinfrared emitters. Physical Review Applied, 20(6), 8 pages. Lien externe

Del Vecchio, P., & Moutanabbir, O. (mars 2022). Electric-dipole spin resonance for light-holes in germanium quantum well [Communication écrite]. 2022 APS March Meeting, Chicago, Illinois. Lien externe

Del Vecchio, P., & Moutanabbir, O. (mai 2022). Electric-Dipole Spin Resonance for Light-Holes in Germanium Quantum Well [Présentation]. Dans MRS Spring Meeting. Lien externe

Daligou, G., Assali, S., Attiaoui, A., Bouthillier, É., & Moutanabbir, O. (juillet 2022). Radiative carrier lifetime in GeSn mid-infrared emitters [Communication écrite]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Lien externe

Del Vecchio, P., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (2020). Vanishing Zeeman energy in a two-dimensional hole gas. Physical Review B, 102(11), 12 pages. Lien externe

Dadwal, U., Kumar, P., Moutanabbir, O., Reiche, M., & Singh, R. (2014). Effect of implantation temperature on the H-induced microstructural damage in AlN. Journal of Alloys and Compounds, 588, 300-304. Lien externe

E

Essig, S., Moutanabbir, O., Wekkeli, A., Nahme, H., Oliva, E., Bett, A. W., & Dimroth, F. (2013). Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity. Journal of Applied Physics, 113(20). Lien externe

F

Fettu, G., Sipe, J. E., & Moutanabbir, O. (2023). Mid-infrared optical spin injection and coherent control. Physical Review B, 107(16), 165202 (8 pages). Lien externe

Fettu, G., Sipe, J. E., Moutanabbir, O., Agio, M., Soci, C., & Sheldon, M. T. (août 2021). Optical injection of spin current in direct bandgap GeSn [Présentation]. Dans SPIE Nanoscience + Engineering, San Diego, California, United States. Lien externe

Fortin-Deschênes, M., & Moutanabbir, O. (mai 2020). (Invited) Growth of Van Der Waals Materials: New Insights from Real-Time Studies [Résumé]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montréal, Canada. Publié dans ECS Meeting Abstracts, MA2020-01(B06 : 2D L). Lien externe

Fettu, G., Attiaoui, A., Samik, M., Bauer, M., & Moutanabbir, O. (2020). Electronic and Optical Properties of Short-Period Si/Sige Superlattices: Effects of Interfacial Atomic-Scale Roughness. ECS Meeting Abstracts, MA2020-01(G01 : Sili), 1305-1305. Lien externe

Fortin-Deschenes, M., Zschiesche, H., Mente, T. O., Locatelli, A., Jacobberger, R. M., Genuzio, F., Lagos, M. J., Biswas, D., Jozwiak, C., Miwa, J. A., Ulstrup, S., Bostwick, A., Rotenberg, E., Arnold, M. S., Botton, G. A., & Moutanabbir, O. (2020). Pnictogens allotropy and phase transformation during van der waals growth. Nano Letters, 20(11), 8258-8266. Lien externe

Fortin-Deschênes, M., Waller, O., An, Q., Lagos, M. J., Botton, G. A., Guo, H., & Moutanabbir, O. (2019). 2D Antimony–Arsenic Alloys. Small, 16(3), 7 pages. Lien externe

Fortin-Deschênes, M., Jacobberger, R. M., Deslauriers, C.-A., Waller, O., Bouthillier, É., Arnold, M. S., & Moutanabbir, O. (2019). Dynamics of Antimonene-Graphene Van Der Waals Growth. Advanced Materials, 31(21), e1900569 (7 pages). Lien externe

Fortin-Deschenes, M., & Moutanabbir, O. (2018). Recovering the semiconductor properties of the epitaxial group V 2D materials antimonene and arsenene. Journal of Physical Chemistry C, 122(16), 9162-9168. Lien externe

Fortin-Deschênes, M., Waller, O., Hébert, A., & Moutanabbir, O. (avril 2017). Epitaxial group V 2D materials : growth and electronic properties [Affiche]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona. Non disponible

Fortin-Deschênes, M., Lévesque, P., Martel, R., & Moutanabbir, O. (avril 2017). Mechanisms and dynamics of two-dimensional black phosphorus sublimation [Affiche]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona. Non disponible

Fortin-Deschenes, M., Waller, O., Mentes, T. O., Locatelli, A., Mukherjee, S., Genuzio, F., Levesque, P. L., Hebert, A., Martel, R., & Moutanabbir, O. (2017). Synthesis of antimonene on germanium. Nano Letters, 17(8), 4970-4975. Lien externe

Fortin-Deschenes, M., Levesque, P. L., Martel, R., & Moutanabbir, O. (2016). Dynamics and mechanisms of exfoliated black phosphorus sublimation. Journal of Physical Chemistry Letters, 7(9), 1667-1674. Lien externe

Fournier-Lupien, J. H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17). Lien externe

Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., Wirths, S., Pippel, E., Mussler, G., Hartmann, J. M., Mantl, S., Desjardins, P., Buca, D., & Moutanabbir, O. (mai 2015). In situ studies of germanium-tin and silicon-germanium-tin dynamics of phase separation [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible

Fournier-Lupien, J.-H., Chagnon, D., Levesque, P., AlMutairi, A.A. A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.-M., Mantl, S., Buca, D., & Moutanabbir, O. (octobre 2014). In situ studies of germanium-tin and silicon-germanium-tin thermal stability [Communication écrite]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. Lien externe

Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., AlMutairi, A.A. A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.-M., Mantl, S., Buca, D., & Moutanabbir, O. (2014). In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability. ECS Meeting Abstracts, MA2014-02(35), 1846-1846. Lien externe

Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26). Lien externe

G

Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (septembre 2022). Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers [Communication écrite]. International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2022), Turin, Italy. Lien externe

Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M., Belyanin, A. A., & Smowton, P. M. (mars 2021). Atomic-scale modeling of interface roughness scattering in quantum cascade lasers [Communication écrite]. Novel In-Plane Semiconductor Lasers XX. Lien externe

Groell, L., Attiaoui, A., Assali, S., & Moutanabbir, O. (2021). Combined iodine- and sulfur-based treatments for an effective passivation of GeSn surface. Journal of Physical Chemistry C, 125(17), 9516-9525. Lien externe

Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (2020). Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering. Physical Review Applied, 13(4), 14 pages. Lien externe

Groell, L., Abdi, S., Assali, S., Atalla, M., Attiaoui, A., & Moutanabbir, O. (mai 2020). Germanium Tin Surface Passivation and Its Effect on the Optoelectronic Performances [Communication écrite]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montreal, Canada. Lien externe

H

Hahnel, A., Reiche, M., Moutanabbir, O., Blumtritt, H., Geisler, H., Hontschel, J., & Engelmann, H.-J. (2012). Improving accuracy and precision of strain analysis by energy-filtered nanobeam electron diffraction. Microscopy and Microanalysis, 18(1), 229-40. Lien externe

J

Joo, H.-J., Kim, Y., Burt, D., Yung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (janvier 2022). 1D photonic crystal GeSn-on-insulator nanobeam laser [Communication écrite]. Silicon Photonics XVII, San Francisco, CA, USA (9 pages). Lien externe

Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Luo, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Son, B., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Gesnoi Laser Technology for Photonic-Integrated Circuits. ECS Meeting Abstracts, MA2022-02(32), 1168-1168. Lien externe

Jung, Y., Burt, D., Zhang, L., Kim, Y., Joo, H.-J., Chen, M., Assali, S., Moutanabbir, O., Tan, C. S., & Nam, D. (2022). Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density. Photonics Research, 10(6), 6 pages. Lien externe

Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (2021). 1D photonic crystal direct bandgap GeSn-on-insulator laser. Applied Physics Letters, 119(20), 201101 (6 pages). Lien externe

Jacobberger, R. M., Murray, E. A., Fortin-Deschênes, M., Göltl, F., Behn, W. A., Krebs, Z. J., Levesque, P. L., Savage, D. E., Smoot, C., Lagally, M. G., Desjardins, P., Martel, R., Brar, V., Moutanabbir, O., Mavrikakis, M., & Arnold, M. S. (2019). Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale, 11(11), 4864-4875. Lien externe

Jung, D., Faucher, J., Mukherjee, S., Akey, A., Ironside, D. J., Cabral, M., Sang, X., Lebeau, J., Bank, S. R., Buonassisi, T., Moutanabbir, O., & Lee, M. L. (2017). Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications, 8(1), 14204 (7 pages). Disponible

K

Kim, Y., Assali, S., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Shi, X., Burt, D., Ikonic, Z., Nam, D., & Moutanabbir, O. (2023). Short-wave infrared cavity resonances in a single GeSn nanowire. Nature Communications, 14(1), 4393 (7 pages). Disponible

Koelling, S., Stehouwer, L. E. A., Paquelet Wuetz, B., Scappucci, G., & Moutanabbir, O. (2023). Three-dimensional atomic-scale tomography of buried semiconductor heterointerfaces. Advanced Materials: Interfaces, 10(3), 2201189. Lien externe

Kim, Y.-M., Assali, S., Jung, Y., Burt, D., Zhang, L., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Atalla, M. R. M., Ikonic, Z., Tan, C. S., Moutanabbir, O., & Nam, D. (2022). Evolution of Gesn Lasers Towards Photonic Integration into Practical Applications. Meeting abstracts, MA2022-02(32), 1167-1167. Lien externe

Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O., & Nam, D. (2022). Enhanced GeSn Microdisk Lasers Directly Released on Si. Advanced Optical Materials, 10(2), 2101213 (7 pages). Lien externe

Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O., & Nam, D. (janvier 2022). Improved GeSn microdisk lasers directly sitting on Si [Communication écrite]. Silicon Photonics XVII, San Francisco, CA, USA (7 pages). Lien externe

Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (octobre 2020). (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, Honolulu, Hawaii, USA. Lien externe

Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). Publié dans ECS Transactions, 98(5). Lien externe

L

Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Daoust, P., Daligou, G., Brodeur, J., Kéna-Cohen, S., Peter, Y.-A., & Moutanabbir, O. (novembre 2023). Transfer-printing of GeSn membranes for broadband photodetection in the extended short-wave infrared [Communication écrite]. IEEE Photonics Conference (IPC 2023), Orlando, FL, USA (2 pages). Lien externe

Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., Attiaoui, A., Daligou, G., Martí, S., Arbiol, J., & Moutanabbir, O. (2022). Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires. ACS Photonics, 9(3), 914-921. Lien externe

Losert, M. P., Wuetz, B. P., Koelling, S., Stehouwer, L., Zwerver, A.-M. J., Philips, S. G., Madzik, M. G., Xue, X., Zheng, G., Lodari, M., Amitonov, S. V., Samkharadze, N., Sammak, A., Vanderspyen, L., Rahman, R., Coppersmith, S. N., Moutanabbir, O., Friesen, M. G., & Scappucci, G. (mars 2022). Increasing the valley splitting in Si/SiGe heterostructures by exploiting atomic concentration fluctuations [Communication écrite]. 2022 APS March Meeting, Chicago, Illinois. Lien externe

Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (novembre 2022). Photodetection from SWIR to MWIR with Ge/GeSn core/shell nanowires [Communication écrite]. IEEE Photonics Conference (IPC 2022), Vancouver, BC, Canada (2 pages). Lien externe

Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., & Moutanabbir, O. (2020). Tunable Shortwave Infrared and Midwave Infrared Optoelectronics in Germanium/Germanium Tin Core/Shell Nanowires. Meeting abstracts, MA2020-01(22), 1321-1321. Lien externe

Lewis, J. B., Isheim, D., Moutanabbir, O., Floss, C., & Seidman, D. N. (juillet 2015). Standardization and correction of artifacts in atom-probe tomographic analysis of Allende nanodiamonds [Résumé]. 78th Annual Meeting of the Meteoritical Society, Berkeley, Calif. (1 page). Publié dans Meteoritics & Planetary Science, 50(S1). Lien externe

Lee, S.-M., Pippel, E., Moutanabbir, O., Kim, J.-H., Lee, H.-J., & Knez, M. (2014). In Situ Raman Spectroscopic Study of Al-Infiltrated Spider Dragline Silk under Tensile Deformation. ACS Applied Materials & Interfaces, 6(19), 16827-16834. Lien externe

M

Moutanabbir, O., Assali, S., Attiaoui, A., Daligou, G., Daoust, P., Vecchio, P. D., Koelling, S., Luo, L., & Rotaru, N. (2023). Nuclear Spin-Depleted, Isotopically Enriched⁷⁰Ge/²⁸ Si⁷⁰Ge Quantum Wells. Advanced Materials, 2305703 (7 pages). Lien externe

Moutanabbir, O., & Fortin-Deschênes, M. (2022). (Invited) Van Der Waals Growth and in Situ Studies of Two-Dimensional Pnictogens. Meeting abstracts, MA2022-01(12), 853-853. Lien externe

Moutanabbir, O., Del Vecchio, P., Attiaoui, A., Fettu, G., Rotaru, N., & Assali, S. (2022). (Invited) Optoelectronic Quantum Information Processing: An All-Group IV Integrated Platform. ECS Meeting Abstracts, MA2022-02(32), 1207-1207. Lien externe

Moutanabbir, O., & Fortin-Deschênes, M. (2021). (Invited) Two-Dimensional Pnictogens: Van Der Waals Growth, Stability, and Phase Transformation. ECS Meeting Abstracts, MA2021-01(14), 655-655. Lien externe

Mukherjee, S., Assali, S., & Moutanabbir, O. (2021). Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects. Nano Letters, 21(23), 9882-9888. Lien externe

Mukherjee, S., Wajs, M., De la Mata, M., Givan, U., Senz, S., Arbiol, J., Francoeur, S., & Moutanabbir, O. (2021). Disentangling phonon channels in nanoscale heat transport. Physical Review B, 104(7), 075429 (7 pages). Lien externe

Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S. Q., Chelnokov, A., Buca, D., & Nam, D. (2021). Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 110502 (10 pages). Lien externe

Mukherjee, S., Attiaoui, A., Bauer, M., & Moutanabbir, O. (2020). 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices. ACS Applied Materials and Interfaces, 12(1), 1728-1736. Lien externe

Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (mai 2019). Germanium-tin semiconductors : a versatile silicon-compatible platform [Communication écrite]. VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. Lien externe

Montanari, M., Ciano, C., Persichetti, L., Di Gaspare, L., Virgilio, M., Capellini, G., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Paul, D. J., Grange, T., Birner, S., Scuderi, M., Nicotra, G., Moutanabbir, O., Mukherjee, S., Baldassarre, L., ... De Seta, M. (septembre 2019). High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers [Communication écrite]. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), Paris, France (2 pages). Lien externe

Mukherjee, S., Bauer, M., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Atomistic and Optical Properties of Group IV Ultrathin Superlattices [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe

Mamun, M. A., Tapily, K., Moutanabbir, O., Baumgart, H., & Elmustafa, A. A. (2018). Effect of hydrogen implantation on the mechanical properties of AlN throughout ion-induced splitting. ECS Journal of Solid State Science and Technology, 7(4), P180-P184. Lien externe

Mukherjee, S., Assali, S., & Moutanabbir, O. (2018). Group IV nanowires for carbon-free energy conversion. Semiconductors and Semimetals, 98, 151-229. Lien externe

Mukherjee, S., Nateghi, N., Jacobberger, R. M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M. S., & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8), 1705592. Lien externe

Moutanabbir, O., & Mukherjee, S. (septembre 2018). Isotopically Programmed Group IV Semiconductors: A Versatile Platform for Quantum Technologies [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe

Mukherjee, S., Givan, U., Senz, S., De la Mata, M., Arbiol, J., & Moutanabbir, O. (2018). Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder. Nano Letters, 18(5), 3066-3075. Lien externe

Mukherjee, S., Nateghi, N., Jacobberger, R., Mata, M., Arbiol, J., Coenen, T., Way, A., Arnold, M., & Moutanabbir, O. (avril 2017). Light emission from InP/graphene hybrid epitaxial structures [Affiche]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona. Non disponible

Mukherjee, S., Kodali, N., Isheim, D., Wirths, S., Hartmann, J. M., Buca, D., Seidman, D. N., & Moutanabbir, O. (2017). Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors. Physical Review B, 95(16), 5 pages. Lien externe

Moutanabbir, O., Isheim, D., Zugang, M., & Seidman, D. N. (2016). Evidence of sub-10 nm aluminum-oxygen precipitates in silicon. Nanotechnology, 27(20), 7 pages. Lien externe

Mukherjee, S., Watanabe, H., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2016). Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions. Nano Letters, 16(2), 1335-1344. Lien externe

Mukherjee, S., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2016). Mapping isotopes in nanoscale and quantum materials using atom probe tomography. Microscopy and Microanalysis, 22(S3), 652-653. Lien externe

Mukherjee, S., Attiaoui, A., Watanabe, H., Isheim, D., Seidman, D. N., & Moutanabbir, O. (mai 2015). 3D atom-by-atom mapping of emerging group IV semiconductors [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible

Mukherjee, S., Givan, U., Senz, S., Bergeron, A., Francoeur, S., De La Mata, M., Arbiol, J., Sekiguchi, T., Itoh, K. M., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2015). Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters, 15(6), 3885-3893. Lien externe

Moutanabbir, O. (2014). Invited: Heterointegration of Semiconductors: Challenges and Opportunities. Meeting abstracts, MA2014-02(34), 1719-1719. Lien externe

Moutanabbir, O., Isheim, D., Blumtritt, H., Senz, S., Pippel, E., & Seidman, D. N. (2013). Colossal injection of catalyst atoms into silicon nanowires. Nature, 496(7443), 78-82. Lien externe

Moutanabbir, O., Ratto, F., Heun, S., Scheerschmidt, K., Locatelli, A., & Rosei, F. (2012). Dynamic Probe of Atom Exchange During Monolayer Growth. Physical Review B, 85(20). Lien externe

Moutanabbir, O. (2011). Group-IV Epitaxial Quantum Dots: Growth Subtleties Unveiled Through Stable Isotope Nanoengineering. Science of Advanced Materials, 3(3), 312-321. Lien externe

N

Nicolas, J., Assali, S., Mukherjee, S., Lotnyk, A., & Moutanabbir, O. (2020). Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn. Crystal Growth and Design, 20(5), 3493-3498. Lien externe

Nateghi, N., Samik, M., Cardinal, D., Jacobberger, R. M., Way, A. J., de la Mata, M., Martel, R., Desjardins, P., Arbiol, J., Arnold, M. S., & Moutanabbir, O. (2020). Van Der Waals Growth of III-V Semiconductors on Graphene. ECS Meeting Abstracts, MA2020-01(B06 : 2D L), 835-835. Lien externe

Nateghi, N., Mukherjee, S., Choubak, S., Nguyen, M., Lévesque, P., Martel, R., Desjardins, P., & Moutanabbir, O. (mai 2015). Growth of III-V semiconductors on silicon oxide/silicon using graphene interlayer [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible

P

Paquelet Wuetz, B., Losert, M. P., Koelling, S., Stehouwer, L. E. A., Zwerver, A.-M. J., Philips, S. G. J., Mądzik, M. T., Xue, X., Zheng, G., Lodari, M., Amitonov, S. V., Samkharadze, N., Sammak, A., Vandersypen, L. M. K., Rahman, R., Coppersmith, S. N., Moutanabbir, O., Friesen, M., & Scappucci, G. (2022). Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots. Nature Communications, 13(1), 7730 (8 pages). Lien externe

Perla, P., Faustmann, A., Kolling, S., Zellekens, P., Deacon, R., Fonseka, H. A., Kolzer, J., Sato, Y., Sanchez, A. M., Moutanabbir, O., Ishibashi, K., Grutzmacher, D., Lepsa, M. I., & Schapers, T. (2022). Te-doped selective-area grown InAs nanowires for superconducting hybrid devices. Physical Review Materials, 6(2), 024602 (9 pages). Lien externe

Persichetti, L., Montanari, M., Ciano, C., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Mukherjee, S., Moutanabbir, O., Capellini, G., Virgilio, M., & De Seta, M. (2020). Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells. Crystals, 10(3), 179 (13 pages). Lien externe

Persichetti, L., Ciano, C., Virgilio, M., Montanari, M., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zöllner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Rew, K., Paul, D. J., Mukherjee, S., Moutanabbir, O., Scuderi, M., Nicotra, G., Grange, T., ... Deschler, F. (août 2019). Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) [Présentation]. Dans Physical Chemistry of Semiconductor Materials and Interfaces XVIII, San Diego, CA, USA. Lien externe

Q

Qin, Y., Vogelgesang, R., Eßlinger, M., Sigle, W., Van Aken, P., Moutanabbir, O., & Knez, M. (2012). Bottom-up tailoring of plasmonic nanopeapods making use of the periodical topography of carbon nanocoil templates. Advanced Functional Materials, 22(24), 5157-5165. Lien externe

R

Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O., & Mahapatra, S. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of Physics D: Applied Physics, 54(18), 185105 (10 pages). Lien externe

S

Singh, S., Mukherjee, S., Mukherjee, S., Assali, S., Luo, L., Das, S., Moutanabbir, O., & Ray, S. K. (2022). Ge-Ge0.92Sn0.08 core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication. Applied Physics Letters, 120(17). Lien externe

Schellingerhout, S. G., de Jong, E. J., Gomanko, M., Guan, X., Jiang, Y., Hoskam, M. S. M., Jung, J., Koelling, S., Moutanabbir, O., Verheijen, M. A., Frolov, S. M., & Bakkers, E. P. A. M. (2022). Growth of PbTe nanowires by molecular beam epitaxy. Materials for Quantum Technology, 2(1), 015001. Lien externe

Sahamir, S. R., Said, S. M., Sabri, M. F. M., Mahmood, M. S., Bin Kamarudin, M. A., & Moutanabbir, O. (2018). Studies on relation between columnar order and electrical conductivity in HAT6 discotic liquid crystals using temperature-dependent Raman spectroscopy and DFT calculations. Liquid Crystals, 45(4), 522-535. Lien externe

Scheerschmidt, K., & Moutanabbir, O. (2015). Tracking atomic processes throughout the formation of heteroepitaxial interfaces. Crystal Research and Technology, 50(6), 490-498. Lien externe

Senichev, A., Givan, U., Moutanabbir, O., Talalaev, V., & Werner, P. (mars 2012). Near-field scanning optical microscopy of infrared emitting semiconductor nanostructures [Affiche]. 76th Annual Meeting of the DPG and DPG Spring Meeting, Berlin, Germany. Non disponible

T

Tan, J. Z. J., Burt, D., Kim, Y.-M., Joo, H.-J., Chen, M., Shi, X., Zhang, L., Tan, C. S., Lim, K. Y. T., Quek, E., Huang, Y.-C., Assali, S., Moutanabbir, O., & Nam, D. (2022). Gesn Bonding Technology for Integrated Laser-on-Chip Photonics. Meeting abstracts, MA2022-02(32), 1177-1177. Lien externe

Tarun, A., Hayazawa, N., Balois, M. V., Kawata, S., Reiche, M., & Moutanabbir, O. (2013). Stress redistribution in individual ultrathin strained silicon nanowires: a high-resolution polarized Raman study. New Journal of Physics, 15(5). Disponible

Tong, X., Qin, Y., Guo, X., Moutanabbir, O., Ao, X., Pippel, E., Zhang, L., & Knez, M. (2012). Enhanced catalytic activity for methanol electro-oxidation of uniformly dispersed nickel oxide nanoparticles-carbon nanotube hybrid materials. Small, 8(22), 3390-3395. Lien externe

Tarun, A., Hayazawa, N., Ishitobi, H., Kawata, S., Reiche, M., & Moutanabbir, O. (2011). Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire. Nano Letters, 11(11), 4780-4788. Lien externe

V

von den Driesch, N., Wirths, S., Troitsch, R., Mussler, G., Breuer, U., Moutanabbir, O., Grutzmacher, D., & Buca, D. (2020). Thermally activated diffusion and lattice relaxation in (Si)GeSn materials. Physical Review Materials, 4(3), 033604 (6 pages). Lien externe

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