Jean-Hughes Fournier-Lupien, Dany Chagnon, Pierre Levesque, AbdulAziz Awadh AlMutairi, Stephan Wirths, Eckhard Pippel, Gregor Mussler, Jean-Michel Hartmann, Siegfried Mantl, Dan Buca and Oussama Moutanabbir
Paper (2014)
An external link is available for this itemDepartment: | Department of Engineering Physics |
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PolyPublie URL: | https://publications.polymtl.ca/12365/ |
Conference Title: | 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting |
Conference Location: | Cancun, Mexico |
Conference Date(s): | 2014-10-05 - 2014-10-09 |
Publisher: | Electrochemical Society |
DOI: | 10.1149/06406.0903ecst |
Official URL: | https://doi.org/10.1149/06406.0903ecst |
Date Deposited: | 18 Apr 2023 15:08 |
Last Modified: | 25 Sep 2024 15:49 |
Cite in APA 7: | Fournier-Lupien, J.-H., Chagnon, D., Levesque, P., AlMutairi, A.A. A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.-M., Mantl, S., Buca, D., & Moutanabbir, O. (2014, October). In situ studies of germanium-tin and silicon-germanium-tin thermal stability [Paper]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. https://doi.org/10.1149/06406.0903ecst |
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