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In situ studies of germanium-tin and silicon-germanium-tin thermal stability

Jean-Hughes Fournier-Lupien, Dany Chagnon, Pierre Levesque, AbdulAziz Awadh AlMutairi, Stephan Wirths, Eckhard Pippel, Gregor Mussler, Jean-Michel Hartmann, Siegfried Mantl, Dan Buca and Oussama Moutanabbir

Paper (2014)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/12365/
Conference Title: 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting
Conference Location: Cancun, Mexico
Conference Date(s): 2014-10-05 - 2014-10-09
Publisher: Electrochemical Society
DOI: 10.1149/06406.0903ecst
Official URL: https://doi.org/10.1149/06406.0903ecst
Date Deposited: 18 Apr 2023 15:08
Last Modified: 05 Apr 2024 10:51
Cite in APA 7: Fournier-Lupien, J.-H., Chagnon, D., Levesque, P., AlMutairi, A.A. A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.-M., Mantl, S., Buca, D., & Moutanabbir, O. (2014, October). In situ studies of germanium-tin and silicon-germanium-tin thermal stability [Paper]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. https://doi.org/10.1149/06406.0903ecst

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