In-Situ n-Type Doped Carrier-Injection Layers in GeSn Direct Bandgap LEDs for Methane Sensing

C. Cardoux, Lara Casiez, Jérémie Chrétien, Paul Goulain, Marvin Frauenrath, N. Pauc, V. Calvo, Nicolas Coudurier, Philippe Rodriguez, Sebastian Koelling, Oussama Moutanabbir, O. Gravrand, Jean-Michel Hartmann, Alexei Tchelnokov and Vincent Reboud

Article (2024)

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Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/62257/
Journal Title:	Meeting abstracts (Electrochemical Society. CD-ROM) (vol. MA2024-02, no. 32)
Publisher:	Institute of Physics
DOI:	10.1149/ma2024-02322327mtgabs
Official URL:	https://doi.org/10.1149/ma2024-02322327mtgabs
Date Deposited:	30 Jan 2025 10:39
Last Modified:	08 Apr 2025 07:30

Cite in APA 7:

Cardoux, C., Casiez, L., Chrétien, J., Goulain, P., Frauenrath, M., Pauc, N., Calvo, V., Coudurier, N., Rodriguez, P., Koelling, S., Moutanabbir, O., Gravrand, O., Hartmann, J.-M., Tchelnokov, A., & Reboud, V. (2024). In-Situ n-Type Doped Carrier-Injection Layers in GeSn Direct Bandgap LEDs for Methane Sensing. Meeting abstracts (Electrochemical Society. CD-ROM), MA2024-02(32), 2327-2327. https://doi.org/10.1149/ma2024-02322327mtgabs

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