Oussama Moutanabbir
, D. Isheim, Mao Zugang and D. N. Seidman
Article (2016)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/34440/ |
| Journal Title: | Nanotechnology (vol. 27, no. 20) |
| Publisher: | IOP Publishing |
| DOI: | 10.1088/0957-4484/27/20/205706 |
| Official URL: | https://doi.org/10.1088/0957-4484/27/20/205706 |
| Date Deposited: | 18 Apr 2023 15:06 |
| Last Modified: | 08 Apr 2025 06:55 |
| Cite in APA 7: | Moutanabbir, O., Isheim, D., Zugang, M., & Seidman, D. N. (2016). Evidence of sub-10 nm aluminum-oxygen precipitates in silicon. Nanotechnology, 27(20), 7 pages. https://doi.org/10.1088/0957-4484/27/20/205706 |
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