Simone Assali, Jérôme Nicolas, Samik Mukherjee, Étienne Bouthillier, Anis Attiaoui and Oussama Moutanabbir
Abstract (2018)
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| Additional Information: | No. MA2018-02 1024 |
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| Department: | Department of Engineering Physics |
| PolyPublie URL: | https://publications.polymtl.ca/40285/ |
| Conference Title: | AiMES 2018 Meeting |
| Conference Location: | Cancun, Mexico |
| Conference Date(s): | 2018-09-30 - 2018-10-04 |
| Journal Title: | ECS Meeting Abstracts (vol. MA2018-02, no. 31) |
| Publisher: | The Electrochemical Society |
| DOI: | 10.1149/ma2018-02/31/1024 |
| Official URL: | https://doi.org/10.1149/ma2018-02/31/1024 |
| Date Deposited: | 18 Apr 2023 15:02 |
| Last Modified: | 08 Apr 2025 12:22 |
| Cite in APA 7: | Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A., & Moutanabbir, O. (2018, September). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). https://doi.org/10.1149/ma2018-02/31/1024 |
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