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Assali, S., Attiaoui, A., Del Vecchio, P., Rotaru, N., & Moutanabbir, O. (2024). Engineering Sn-Based Group IV Quantum Materials. Meeting abstracts (Electrochemical Society. CD-ROM), MA2024-02(32), 2323-2323. External link
Atalla, M. R. M., Assali, S., Daligou, G., Attiaoui, A., Koelling, S., Daoust, P., & Moutanabbir, O. (2024). Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission. ACS Photonics, 4c00033 (7 pages). External link
Attiaoui, A. (2023). Optical Behavior of Group-IV Semiconductors in Relation to Atomic Interfacial Disorder, Quantum Confinement, and Fano Resonance [Ph.D. thesis, Polytechnique Montréal]. Available
Attiaoui, A., Daligou, G., Assali, S., Skibitzki, O., Schroeder, T., & Moutanabbir, O. (2023). Polarization-tuned fano resonances in all-dielectric short-wave infrared metasurface. Advanced Materials, 35(28), 2300595 (9 pages). External link
Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A., & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 175304 (9 pages). External link
Attiaoui, A., Fettu, G., Mukherjee, S., Bauer, M., & Moutanabbir, O. (2022). Electronic signature of subnanometer interfacial broadening in heterostructures. Nano Letters, 22(17), 7080-7086. External link
Attiaoui, A., Assali, S., Luo, L., Daligou, G., Atala, M., Koelling, S., & Moutanabbir, O. (2022, July). Group-IV GeSn nanophotonics [Paper]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). External link
Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2022). High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response. ACS Photonics, 9(4), 1425-1433. External link
Assali, S., Attiaoui, A., Vecchio, P. D., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2022). A Light-Hole Germanium Quantum Well on Silicon. Advanced Materials, 34(27), e2201192 (11 pages). External link
Atalla, M., Assali, S., Koelling, S., Daligou, G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S., & Moutanabbir, O. (2022, May). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs [Paper]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). External link
Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (2021, May). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells . In CLEO: Science and Innovations 2021, San Jose, California, United States. Published in Conference on Lasers and Electro-Optics, 56. External link
Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (2021). All-Group IV Transferable Membrane Mid-Infrared Photodetectors. Advanced Functional Materials, 31(3), 9 pages. External link
Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (2021, May). GeSn membrane mid-infrared photodetectors [Paper]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). External link
Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J. E. M., & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. External link
Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (2021, May). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells [Paper]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). External link
Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (2020, October). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Paper]. ECS Meeting Abstracts. External link
Assali, S., Attiaoui, A., Atalla, M. R. M., Dijkstra, A., Aashish, K., Mukherjee, S., Abdi, S., & Moutanabbir, O. (2020, May). Epitaxial GeSn and its integration in MIR optoelectronics [Paper]. Science and Innovations 2020 (CLEO), Washington, D.C.. External link
Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, October). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Abstract]. 236th ECS Meeting, Atlanta, GA. Published in ECS Meeting Abstracts, MA2019-02(25). External link
Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, May). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics [Paper]. Conference on Lasers and Electro-Optics, San Jose, California. External link
Attiaoui, A. (2018). Non-Equilibrium SiGeSn Group IV Heterostructures and Nanowires for Integrated Mid-Infrared Photonics [Master's thesis, École Polytechnique de Montréal]. Available
Attiaoui, A., Wirth, S., Blanchard-Dionne, A.-P., Meunier, M., Hartmann, J. M., Buca, D., & Moutanabbir, O. (2018). Extreme IR absorption in group IV-SiGeSn core-shell nanowires. Journal of Applied Physics, 123(22), 13 pages. External link
Attiaoui, A., Assali, S., Nicolas, J., & Moutanabbir, O. (2018, September). Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link
Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A., & Moutanabbir, O. (2018, September). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link
Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages. External link
Attiaoui, A., & Moutanabbir, O. (2014). Indirect-to-direct band gap transition in relaxed and strained Ge 1-x-ySixSny ternary alloys. Journal of Applied Physics, 116(6). External link
Attiaoui, A., & Moutanabbir, O. (2014, October). Optical and electronic properties of GeSn and GeSiSn heterostructures and nanowires [Paper]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. External link
Attiaoui, A., & Moutanabbir, O. (2014). Optical and Electronic Properties of GeSn and GeSiSn Heterostructures and Nanowires. ECS Meeting Abstracts, MA2014-02(35), 1843-1843. External link
Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2022). Extracting the complex refractive index of an ultrathin layer at terahertz frequencies with no prior knowledge of substrate absorption loss. IEEE Transactions on Terahertz Science and Technology, 12(4), 385-391. External link
Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., Elezzabi, A. Y., Sadwick, L. P., & Yang, T. (2022, January). A method based on complementary transmission and reflection measurements for extracting the optical properties of a thin film [Paper]. Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV, San Francisco, California, United States. External link
Daligou, G., Soref, R., Attiaoui, A., Hossain, J., Atalla, M., Vecchio, P. D., & Moutanabbir, O. (2023). Group IV mid-infrared thermophotovoltaic cells on silicon. IEEE Journal of Photovoltaics, 13(5), 728-735. External link
Daligou, G., Attiaoui, A., Assali, S., Del Vecchio, P., & Moutanabbir, O. (2023). Radiative carrier lifetime in Ge₁-xSnₓ midinfrared emitters. Physical Review Applied, 20(6), 8 pages. External link
Daligou, G., Assali, S., Attiaoui, A., Bouthillier, É., & Moutanabbir, O. (2022, July). Radiative carrier lifetime in GeSn mid-infrared emitters [Paper]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). External link
Fettu, G., Attiaoui, A., Samik, M., Bauer, M., & Moutanabbir, O. (2020). Electronic and Optical Properties of Short-Period Si/Sige Superlattices: Effects of Interfacial Atomic-Scale Roughness. ECS Meeting Abstracts, MA2020-01(G01 : Sili), 1305-1305. External link
Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M., Belyanin, A. A., & Smowton, P. M. (2021, March). Atomic-scale modeling of interface roughness scattering in quantum cascade lasers [Paper]. Novel In-Plane Semiconductor Lasers XX. External link
Groell, L., Attiaoui, A., Assali, S., & Moutanabbir, O. (2021). Combined iodine- and sulfur-based treatments for an effective passivation of GeSn surface. Journal of Physical Chemistry C, 125(17), 9516-9525. External link
Groell, L., Abdi, S., Assali, S., Atalla, M., Attiaoui, A., & Moutanabbir, O. (2020, May). Germanium Tin Surface Passivation and Its Effect on the Optoelectronic Performances [Paper]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montreal, Canada. External link
Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (2020, October). (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Paper]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, Honolulu, Hawaii, USA. External link
Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Paper]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). Published in ECS Transactions, 98(5). External link
Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., Attiaoui, A., Daligou, G., Martí, S., Arbiol, J., & Moutanabbir, O. (2022). Extended-SWIR photodetection in all-Group IV core/shell nanowires. ACS Photonics, 9(3), 914-921. External link
Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2022, November). Photodetection from SWIR to MWIR with Ge/GeSn core/shell nanowires [Paper]. IEEE Photonics Conference (IPC 2022), Vancouver, BC, Canada (2 pages). External link
Moutanabbir, O., Assali, S., Attiaoui, A., Daligou, G., Daoust, P., Vecchio, P. D., Koelling, S., Luo, L., & Rotaru, N. (2023). Nuclear Spin-Depleted, Isotopically Enriched⁷⁰Ge/²⁸ Si⁷⁰Ge Quantum Wells. Advanced Materials, 2305703 (7 pages). External link
Moutanabbir, O., Del Vecchio, P., Attiaoui, A., Fettu, G., Rotaru, N., & Assali, S. (2022). (Invited) Optoelectronic Quantum Information Processing: An All-Group IV Integrated Platform. ECS Meeting Abstracts, MA2022-02(32), 1207-1207. External link
Mukherjee, S., Attiaoui, A., Bauer, M., & Moutanabbir, O. (2020). 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices. ACS Applied Materials and Interfaces, 12(1), 1728-1736. External link
Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (2019, May). Germanium-tin semiconductors : a versatile silicon-compatible platform [Paper]. VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. External link
Mukherjee, S., Bauer, M., Attiaoui, A., & Moutanabbir, O. (2018, September). Atomistic and Optical Properties of Group IV Ultrathin Superlattices [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link
Rousset, N., Villeneuve, J., Fournier-Lupien, J.-H., Attiaoui, A., Taillon, G., Francoeur, S., & Daigle, O. (2014, June). Comparison of EMCCD post-processing methods for photon counting flux ranges [Paper]. High Energy, Optical, and Infrared Detectors for Astronomy VI, Montréal, Québec. External link
