Simone Assali, Alain Dijkstra, Anis Attiaoui, Étienne Bouthillier, J. E. M. Haverkort and Oussama Moutanabbir
Article (2021)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/47213/ |
| Journal Title: | Physical Review Applied (vol. 15, no. 2) |
| Publisher: | American Physical Society (APS) |
| DOI: | 10.1103/physrevapplied.15.024031 |
| Official URL: | https://doi.org/10.1103/physrevapplied.15.024031 |
| Date Deposited: | 18 Apr 2023 14:59 |
| Last Modified: | 08 Apr 2025 07:13 |
| Cite in APA 7: | Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J. E. M., & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. https://doi.org/10.1103/physrevapplied.15.024031 |
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