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Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors

Simone Assali, A. Dijkstra, Anis Attiaoui, Étienne Bouthillier, J. E. M. Haverkort and Oussama Moutanabbir

Article (2021)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/47213/
Journal Title: Physical Review Applied (vol. 15, no. 2)
Publisher: American Physical Society (APS)
DOI: 10.1103/physrevapplied.15.024031
Official URL: https://doi.org/10.1103/physrevapplied.15.024031
Date Deposited: 18 Apr 2023 14:59
Last Modified: 05 Apr 2024 11:48
Cite in APA 7: Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J. E. M., & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. https://doi.org/10.1103/physrevapplied.15.024031

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