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(Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More

Simone Assali, Salim Abdi, Mahmoud Atalla, Anis Attiaoui, Étienne Bouthillier, Patrick Del Vecchio, Léonor Groell, Aashish Kumar, Lu Luo, Samik Mukherjee, Jérôme Nicolas and Oussama Moutanabbir

Abstract (2019)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/43503/
Conference Title: 236th ECS Meeting
Conference Location: Atlanta, GA
Conference Date(s): 2019-10-13 - 2019-10-17
Journal Title: ECS Meeting Abstracts (vol. MA2019-02, no. 25)
Publisher: The Electrochemical Society
DOI: 10.1149/ma2019-02/25/1162
Official URL: https://doi.org/10.1149/ma2019-02/25/1162
Date Deposited: 18 Apr 2023 15:01
Last Modified: 25 Sep 2024 16:30
Cite in APA 7: Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, October). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Abstract]. 236th ECS Meeting, Atlanta, GA. Published in ECS Meeting Abstracts, MA2019-02(25). https://doi.org/10.1149/ma2019-02/25/1162

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