Simone Assali, Salim Abdi, Mahmoud Atalla, Anis Attiaoui, Étienne Bouthillier, Patrick Del Vecchio, Léonor Groell, Aashish Kumar, Lu Luo, Samik Mukherjee, Jérôme Nicolas and Oussama Moutanabbir
Abstract (2019)
An external link is available for this itemDepartment: | Department of Engineering Physics |
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PolyPublie URL: | https://publications.polymtl.ca/43503/ |
Conference Title: | 236th ECS Meeting |
Conference Location: | Atlanta, GA |
Conference Date(s): | 2019-10-13 - 2019-10-17 |
Journal Title: | ECS Meeting Abstracts (vol. MA2019-02, no. 25) |
Publisher: | The Electrochemical Society |
DOI: | 10.1149/ma2019-02/25/1162 |
Official URL: | https://doi.org/10.1149/ma2019-02%2f25%2f1162 |
Date Deposited: | 18 Apr 2023 15:01 |
Last Modified: | 05 May 2023 15:47 |
Cite in APA 7: | Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, October). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Abstract]. 236th ECS Meeting, Atlanta, GA. Published in ECS Meeting Abstracts, MA2019-02(25). https://doi.org/10.1149/ma2019-02%2f25%2f1162 |
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