Simone Assali, Salim Abdi, Mahmoud Atalla, Anis Attiaoui, Étienne Bouthillier, Patrick Del Vecchio, Léonor Groell, Aashish Kumar, Lu Luo, Samik Mukherjee, Jérôme Nicolas and Oussama Moutanabbir
Abstract (2019)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/43503/ |
| Conference Title: | 236th ECS Meeting |
| Conference Location: | Atlanta, GA |
| Conference Date(s): | 2019-10-13 - 2019-10-17 |
| Journal Title: | ECS Meeting Abstracts (vol. MA2019-02, no. 25) |
| Publisher: | The Electrochemical Society |
| DOI: | 10.1149/ma2019-02/25/1162 |
| Official URL: | https://doi.org/10.1149/ma2019-02/25/1162 |
| Date Deposited: | 18 Apr 2023 15:01 |
| Last Modified: | 25 Sep 2024 16:30 |
| Cite in APA 7: | Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, October). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Abstract]. 236th ECS Meeting, Atlanta, GA. Published in ECS Meeting Abstracts, MA2019-02(25). https://doi.org/10.1149/ma2019-02/25/1162 |
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