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Assali, S., Attiaoui, A., Vecchio, P. D., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2022). A Light-Hole Germanium Quantum Well on Silicon. Advanced Materials, 34(27), e2201192 (11 pages). External link
Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (2021, May). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells . In CLEO: Science and Innovations 2021, San Jose, California, United States. Published in Conference on Lasers and Electro-Optics, 56. External link
Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (2021, May). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells [Paper]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). External link
Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (2020, October). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Paper]. ECS Meeting Abstracts. External link
Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, October). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Abstract]. 236th ECS Meeting, Atlanta, GA. Published in ECS Meeting Abstracts, MA2019-02(25). External link
Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, May). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics [Paper]. Conference on Lasers and Electro-Optics, San Jose, California. External link
Attiaoui, A., Assali, S., Nicolas, J., & Moutanabbir, O. (2018, September). Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link
Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A., & Moutanabbir, O. (2018, September). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link
Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages. External link
Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (2020). Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors. Semiconductor Science and Technology, 35(9), 9 pages. External link
Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (2018, September). Decoupling Strain and Composition Effects on Ge₁₋YSny Lattice Vibrations [Abstract]. AiMES 2018 Meeting, Cancun, Mexico. Published in ECS Meeting Abstracts, MA2018-02(31). External link
Cousineau, É., Mukherjee, S., Simone, A., Nicolas, J., & Moutanabbir, O. (2020). Lattice Vibrational Modes in Epitaxial Metastable Germanium-Tin Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1320-1320. External link
Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (2019, May). Germanium-tin semiconductors : a versatile silicon-compatible platform [Paper]. VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. External link
Nicolas, J. (2022). Ingénierie de contrainte et stabilité des hétérostructures épitaxiales de Ge1-xSnx [Ph.D. thesis, Polytechnique Montréal]. Available
Nicolas, J., Assali, S., Mukherjee, S., Lotnyk, A., & Moutanabbir, O. (2020). Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn. Crystal Growth and Design, 20(5), 3493-3498. External link
