Simone Assali, Anis Attiaoui, Mahmoud Atalla, Dijkstra Alain, Aashish Kumar, Samik Mukherjee, Jérôme Nicolas, Sebastian Koelling and Oussama Moutanabbir
Paper (2020)
An external link is available for this item| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/52272/ |
| Conference Title: | ECS Meeting Abstracts |
| Conference Date(s): | 2020-10-04 - 2020-10-09 |
| Journal Title: | ECS Meeting Abstracts (vol. MA2020-02, no. 24) |
| DOI: | 10.1149/ma2020-02241718mtgabs |
| Official URL: | https://doi.org/10.1149/ma2020-02241718mtgabs |
| Date Deposited: | 18 Apr 2023 15:00 |
| Last Modified: | 11 Dec 2025 16:57 |
| Cite in APA 7: | Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (2020, October). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Paper]. ECS Meeting Abstracts. Published in ECS Meeting Abstracts, MA2020-02(24). https://doi.org/10.1149/ma2020-02241718mtgabs |
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