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Atalla, M., Assali, S., Koelling, S., Daligou, G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S., & Moutanabbir, O. (2022, May). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs [Paper]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). Unavailable
Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (2020, October). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Paper]. ECS Meeting Abstracts. External link
Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, October). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Abstract]. 236th ECS Meeting, Atlanta, GA. Published in ECS Meeting Abstracts, MA2019-02(25). External link
Groell, L., Abdi, S., Assali, S., Atalla, M., Attiaoui, A., & Moutanabbir, O. (2020, May). Germanium Tin Surface Passivation and Its Effect on the Optoelectronic Performances [Paper]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montreal, Canada. External link
Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (2020, October). (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Paper]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, Honolulu, Hawaii, USA. External link
Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Paper]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). Published in ECS Transactions, 98(5). External link
