Salim Abdi, Mahmoud Atalla, Simone Assali, Aashish Kumar, Léonor Groell, Sebastian Koelling and Oussama Moutanabbir
Article (2020)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/55942/ |
| Journal Title: | ECS Meeting Abstracts (vol. MA2020-01, no. 22) |
| Publisher: | The Electrochemical Society |
| DOI: | 10.1149/ma2020-01221322mtgabs |
| Official URL: | https://doi.org/10.1149/ma2020-01221322mtgabs |
| Date Deposited: | 13 Oct 2023 15:29 |
| Last Modified: | 25 Sep 2024 16:47 |
| Cite in APA 7: | Abdi, S., Atalla, M., Assali, S., Kumar, A., Groell, L., Koelling, S., & Moutanabbir, O. (2020). Towards Ultra-Low Specific Contact Resistance on P-Type and N-Type Narrow Bandgap GeSn Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1322-1322. https://doi.org/10.1149/ma2020-01221322mtgabs |
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