Étienne Bouthillier, Simone Assali, Jérôme Nicolas and Oussama Moutanabbir
Article (2020)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/45918/ |
| Journal Title: | Semiconductor Science and Technology (vol. 35, no. 9) |
| Publisher: | IOP Publishing |
| DOI: | 10.1088/1361-6641/ab9846 |
| Official URL: | https://doi.org/10.1088/1361-6641/ab9846 |
| Date Deposited: | 18 Apr 2023 15:00 |
| Last Modified: | 25 Sep 2024 16:33 |
| Cite in APA 7: | Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (2020). Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors. Semiconductor Science and Technology, 35(9), 9 pages. https://doi.org/10.1088/1361-6641/ab9846 |
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