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Assali, S., Attiaoui, A., Del Vecchio, P., Rotaru, N., & Moutanabbir, O. (2024). Engineering Sn-Based Group IV Quantum Materials. Meeting abstracts (Electrochemical Society. CD-ROM), MA2024-02(32), 2323-2323. External link
Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, October). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Abstract]. 236th ECS Meeting, Atlanta, GA. Published in ECS Meeting Abstracts, MA2019-02(25). External link
Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2019, May). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics [Paper]. Conference on Lasers and Electro-Optics, San Jose, California. External link
Daoust, P., Rotaru, N., Biswas, D., Koelling, S., Rahier, E., Dubé-Valade, A., Del Vecchio, P., Edwards, M. S., Tanvir, M., Sajadi, E., Salfi, J., & Moutanabbir, O. (2026). Nuclear Spin‐Free ⁷⁰Ge/²⁸Si⁷⁰Ge Quantum Well Heterostructures Grown on Industrial SiGe‐Buffered Wafers. Advanced Science. External link
Daoust, P., Del Vecchio, P., Rotaru, N., Dubé-Valade, A., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Koelling, S., Luo, L., Rahier, E., & Moutanabbir, O. (2025). Reduced Pressure Chemical Vapour Deposition Growth of Nuclear Spin-Free 70Ge/28Si70Ge Heterostructures on Industrial Si-Ge Substrates. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(36), 1717 (1 page). External link
Daoust, P., Rotaru, N., Dubé-Valade, A., Koelling, S., Rahier, E., Del Vecchio, P., Biswas, D., Edwards, M., Tanvir, M., Sajadi, E., Salfi, J., & Moutanabbir, O. (2025, November). Isotopically pure 70Ge/28Si70Ge heterostructures grown on SiGe-buffered Si wafers [Paper]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Unavailable
Del Vecchio, P., Bosco, S., Loss, D., & Moutanabbir, O. (2025, November). Spin-orbit interactions of light holes in Ge/GeSn planar systems [Paper]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Unavailable
Del Vecchio, P. (2024). Dynamics and Spin-Orbit Coupling Properties of Light Holes Confined in Group-IV Semiconductor Heterostructures [Ph.D. thesis, Polytechnique Montréal]. Available
Del Vecchio, P., & Moutanabbir, O. (2024). Light-hole spin confined in germanium. Physical Review B, 110(4), 045409 (11 pages). External link
Daligou, G. T. E. G., Soref, R., Attiaoui, A., Hossain, J., Atalla, M., Del Vecchio, P., & Moutanabbir, O. (2023). Group IV mid-infrared thermophotovoltaic cells on silicon. IEEE Journal of Photovoltaics, 13(5), 728-735. External link
Del Vecchio, P., & Moutanabbir, O. (2023). Light-hole gate-defined spin-orbit qubit. Physical Review B, 107(16), L161406 (6 pages). External link
Daligou, G. T. E. G., Attiaoui, A., Assali, S., Del Vecchio, P., & Moutanabbir, O. (2023). Radiative carrier lifetime in Ge₁-xSnₓ midinfrared emitters. Physical Review Applied, 20(6), 8 pages. External link
Del Vecchio, P., & Moutanabbir, O. (2022, March). Electric-dipole spin resonance for light-holes in germanium quantum well [Paper]. 2022 APS March Meeting, Chicago, Illinois. External link
Del Vecchio, P., & Moutanabbir, O. (2022, May). Electric-Dipole Spin Resonance for Light-Holes in Germanium Quantum Well [Presentation]. In MRS Spring Meeting. External link
Fournier-Lupien, J.-H., Del Vecchio, P., Lacroix, C., & Sirois, F. (2020). An analytical model of 2D electric potential and current transfer in superconducting tapes with a current flow diverter architecture. Superconductor Science and Technology, 33(11), 115014 (14 pages). External link
Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción Díaz, O., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. M. (2025, November). Characterization of a two-dimensional hole gas in a GeSn quantum well system [Paper]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Unavailable
Kaul, P. B., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción, O., Ikonić, Z., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. (2025). GeSn quantum wells as a platform for spin-resolved hole transport. Communications Materials, 6(1), 216. External link
Moutanabbir, O., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Daoust, P., Del Vecchio, P., Koelling, S., Luo, L., & Rotaru, N. (2023). Nuclear Spin-Depleted, Isotopically Enriched⁷⁰Ge/²⁸ Si⁷⁰Ge Quantum Wells. Advanced Materials, 2305703 (7 pages). External link
Moutanabbir, O., Del Vecchio, P., Attiaoui, A., Fettu, G., Rotaru, N., & Assali, S. (2022). (Invited) Optoelectronic Quantum Information Processing: An All-Group IV Integrated Platform. ECS Meeting Abstracts, MA2022-02(32), 1207-1207. External link
Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (2019, May). Germanium-tin semiconductors : a versatile silicon-compatible platform [Paper]. VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. External link
Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (2019, May). Germanium-tin semiconductors: A versatile silicon-compatible platform [Abstract]. Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7), Kyoto, Japan (1 page). External link
Rotaru, N., Del Vecchio, P., & Moutanabbir, O. (2025). Hole spin in direct bandgap germanium-tin quantum dot. Physical review B, 112(12), 125428 (12 pages). External link
Rotaru, N., Del Vecchio, P., & Moutanabbir, O. (2025, November). Direct Bandgap Group IV Hole Spin Qubits [Paper]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. Unavailable
