Prateek Kaul, Jan Karthein, Jonas Buchhorn, Taizo Kawano, Taisei Usubuchi, Jun Ishihara, Nicolas Rotaru, Patrick Del Vecchio, Omar Concepción Díaz, Detlev Grützmacher, Qing-Tai Zhao, Oussama Moutanabbir
, Makoto Kohda, Thomas Schäpers and Dan Mihai Buca
Paper (2025)
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| Department: | Department of Engineering Physics |
|---|---|
| PolyPublie URL: | https://publications.polymtl.ca/72412/ |
| Conference Title: | 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025) |
| Conference Location: | Yokohama-shi, Kanagawa, Japan |
| Conference Date(s): | 2025-11-10 - 2025-11-13 |
| Date Deposited: | 10 Feb 2026 09:10 |
| Last Modified: | 10 Feb 2026 09:13 |
| Cite in APA 7: | Kaul, P., Karthein, J., Buchhorn, J., Kawano, T., Usubuchi, T., Ishihara, J., Rotaru, N., Del Vecchio, P., Concepción Díaz, O., Grützmacher, D., Zhao, Q.-T., Moutanabbir, O., Kohda, M., Schäpers, T., & Buca, D. M. (2025, November). Characterization of a two-dimensional hole gas in a GeSn quantum well system [Paper]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan. |
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