Oussama Moutanabbir, Anis Attiaoui, Étienne Bouthillier, Patrick Del Vecchio, Aashish Kumar, Jérôme Nicolas, Samik Mukherjee and Simone Assali
Abstract (2019)
An external link is available for this itemDepartment: | Department of Engineering Physics |
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PolyPublie URL: | https://publications.polymtl.ca/64661/ |
Conference Title: | Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7) |
Conference Location: | Kyoto, Japan |
Conference Date(s): | 2019-05-19 - 2019-05-23 |
Publisher: | Engineering Conferences International (ECI) |
Official URL: | https://dc.engconfintl.org/ulsic_tft_vii/36/ |
Date Deposited: | 23 Apr 2025 13:24 |
Last Modified: | 23 Apr 2025 13:24 |
Cite in APA 7: | Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (2019, May). Germanium-tin semiconductors: A versatile silicon-compatible platform [Abstract]. Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII (ULSIC VS TFT 7), Kyoto, Japan (1 page). https://dc.engconfintl.org/ulsic_tft_vii/36/ |
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