Reduced Pressure Chemical Vapour Deposition Growth of Nuclear Spin-Free 70Ge/28Si70Ge Heterostructures on Industrial Si-Ge Substrates

Patrick Daoust, Patrick Del Vecchio, Nicolas Rotaru, Alexis Dubé-Valade, Simone Assali, Anis Attiaoui, Gérard Tanguy Eric Gnato Daligou, Sebastian Koelling, Lu Luo, Eloïse Rahier and Oussama Moutanabbir

Article (2025)

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Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/66649/
Journal Title:	Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (vol. MA2025-01, no. 36)
Publisher:	Institute of Physics
DOI:	10.1149/ma2025-01361717mtgabs
Official URL:	https://doi.org/10.1149/ma2025-01361717mtgabs
Date Deposited:	22 Jul 2025 12:11
Last Modified:	22 Jul 2025 12:11

Cite in APA 7:

Daoust, P., Del Vecchio, P., Rotaru, N., Dubé-Valade, A., Assali, S., Attiaoui, A., Daligou, G. T. E. G., Koelling, S., Luo, L., Rahier, E., & Moutanabbir, O. (2025). Reduced Pressure Chemical Vapour Deposition Growth of Nuclear Spin-Free 70Ge/28Si70Ge Heterostructures on Industrial Si-Ge Substrates. Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM), MA2025-01(36), 1717 (1 page). https://doi.org/10.1149/ma2025-01361717mtgabs

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