Isotopically pure 70Ge/28Si70Ge heterostructures grown on SiGe-buffered Si wafers

Patrick Daoust, Nicolas Rotaru, Alexis Dubé-Valade, Sebastian Koelling, Eloïse Rahier, Patrick Del Vecchio, Debojyoti Biswas, Marcus Edwards, Mukhlasur Tanvir, Ebrahim Sajadi, Joseph Salfi and Oussama Moutanabbir

Paper (2025)

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Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/72416/
Conference Title:	10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025)
Conference Location:	Yokohama-shi, Kanagawa, Japan
Conference Date(s):	2025-11-10 - 2025-11-13
Date Deposited:	10 Feb 2026 09:03
Last Modified:	10 Feb 2026 09:14

Cite in APA 7:

Daoust, P., Rotaru, N., Dubé-Valade, A., Koelling, S., Rahier, E., Del Vecchio, P., Biswas, D., Edwards, M., Tanvir, M., Sajadi, E., Salfi, J., & Moutanabbir, O. (2025, November). Isotopically pure 70Ge/28Si70Ge heterostructures grown on SiGe-buffered Si wafers [Paper]. 10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025), Yokohama-shi, Kanagawa, Japan.

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