Anis Attiaoui and Oussama Moutanabbir
Paper (2014)
An external link is available for this item
| Department: | Department of Engineering Physics |
|---|---|
| PolyPublie URL: | https://publications.polymtl.ca/12814/ |
| Conference Title: | 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting |
| Conference Location: | Cancun, Mexico |
| Conference Date(s): | 2014-10-05 - 2014-10-09 |
| Publisher: | Electrochemical Society |
| DOI: | 10.1149/06406.0869ecst |
| Official URL: | https://doi.org/10.1149/06406.0869ecst |
| Date Deposited: | 18 Apr 2023 15:07 |
| Last Modified: | 08 Apr 2025 12:20 |
| Cite in APA 7: | Attiaoui, A., & Moutanabbir, O. (2014, October). Optical and electronic properties of GeSn and GeSiSn heterostructures and nanowires [Paper]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. https://doi.org/10.1149/06406.0869ecst |
|---|---|
Statistics
Dimensions
Repository Staff Only
|
View Item |
