Anis Attiaoui and Oussama Moutanabbir
Article (2014)
An external link is available for this item| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/12815/ |
| Journal Title: | Journal of Applied Physics (vol. 116, no. 6) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.4889926 |
| Official URL: | https://doi.org/10.1063/1.4889926 |
| Date Deposited: | 18 Apr 2023 15:07 |
| Last Modified: | 08 Apr 2025 01:39 |
| Cite in APA 7: | Attiaoui, A., & Moutanabbir, O. (2014). Indirect-to-direct band gap transition in relaxed and strained Ge 1-x-ySixSny ternary alloys. Journal of Applied Physics, 116(6). https://doi.org/10.1063/1.4889926 |
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