S. Assali, S. Koelling, Z. Abboud, J. Nicolas, A. Attiaoui and Oussama Moutanabbir
Article (2022)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/52059/ |
| Journal Title: | Journal of Applied Physics (vol. 132, no. 17) |
| Publisher: | AIP Publishing |
| DOI: | 10.1063/5.0119624 |
| Official URL: | https://doi.org/10.1063/5.0119624 |
| Date Deposited: | 18 Apr 2023 14:58 |
| Last Modified: | 25 Sep 2024 16:42 |
| Cite in APA 7: | Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A., & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 175304 (9 pages). https://doi.org/10.1063/5.0119624 |
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