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Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain

Daniel Burt, Hyo-Jun Joo, Youngmin Kim, Yongduck Jung, Melvina Chen, Manlin Luo, Dong-Ho Kang, Simone Assali, Lin Zhang, Bongkwon Son, Weijun Fan, Oussama Moutanabbir, Zoran Ikonic, Chuan Seng Tan, Yi-Chiau Huang and Donguk Nam

Article (2022)

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Additional Information: Groupe de recherche: Multiphase and Reactive Flows Laboratory
Department: Department of Engineering Physics
Research Center: Other
PolyPublie URL: https://publications.polymtl.ca/50992/
Journal Title: Applied Physics Letters (vol. 120, no. 20)
Publisher: American Institute of Physics
DOI: 10.1063/5.0087477
Official URL: https://doi.org/10.1063/5.0087477
Date Deposited: 18 Apr 2023 14:58
Last Modified: 05 Apr 2024 11:54
Cite in APA 7: Burt, D., Joo, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain. Applied Physics Letters, 120(20), 7 pages. https://doi.org/10.1063/5.0087477

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