Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

Stephanie Essig, Oussama Moutanabbir, A. Wekkeli, H. Nähme, E. Oliva, A. W. Bett and F. Dimroth

Article (2013)

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Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/13943/
Journal Title:	Journal of Applied Physics (vol. 113, no. 20)
Publisher:	American Institute of Physics
DOI:	10.1063/1.4807905
Official URL:	https://doi.org/10.1063/1.4807905
Date Deposited:	18 Apr 2023 15:09
Last Modified:	08 Apr 2025 01:41

Cite in APA 7:	Essig, S., Moutanabbir, O., Wekkeli, A., Nähme, H., Oliva, E., Bett, A. W., & Dimroth, F. (2013). Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity. Journal of Applied Physics, 113(20). https://doi.org/10.1063/1.4807905
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