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Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity

Stephanie Essig, Oussama Moutanabbir, A. Wekkeli, H. Nahme, E. Oliva, A. W. Bett and F. Dimroth

Article (2013)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/13943/
Journal Title: Journal of Applied Physics (vol. 113, no. 20)
Publisher: American Institute of Physics
DOI: 10.1063/1.4807905
Official URL: https://doi.org/10.1063/1.4807905
Date Deposited: 18 Apr 2023 15:09
Last Modified: 05 Apr 2024 10:54
Cite in APA 7: Essig, S., Moutanabbir, O., Wekkeli, A., Nahme, H., Oliva, E., Bett, A. W., & Dimroth, F. (2013). Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity. Journal of Applied Physics, 113(20). https://doi.org/10.1063/1.4807905

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