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Mid-Infrared Top-Gated Ge<inf>0.82</inf>Sn<inf>0.18</inf> Nanowire Phototransistors

Lu Luo, Mahmoud R. M. Atalla, Simone Assali, Sebastian Koelling and Oussama Moutanabbir

Article (2024)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/58511/
Journal Title: Advanced Optical Materials
Publisher: John Wiley and Sons Inc
DOI: 10.1002/adom.202400096
Official URL: https://doi.org/10.1002/adom.202400096
Date Deposited: 03 Jun 2024 14:54
Last Modified: 25 Sep 2024 16:50
Cite in APA 7: Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., & Moutanabbir, O. (2024). Mid-Infrared Top-Gated Ge<inf>0.82</inf>Sn<inf>0.18</inf> Nanowire Phototransistors. Advanced Optical Materials, 2400096 (7 pages). https://doi.org/10.1002/adom.202400096

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