Simone Assali, Anis Attiaoui, Sebastian Koelling, Mahmoud R. M. Atalla, Ashish Kumar, Jérôme Nicolas, Faqrul A. Chowdhury, Cédric Lemieux-Leduc and Oussama Moutanabbir
Article (2022)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/52058/ |
| Journal Title: | Journal of Applied Physics (vol. 132, no. 19) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/5.0120505 |
| Official URL: | https://doi.org/10.1063/5.0120505 |
| Date Deposited: | 18 Apr 2023 14:58 |
| Last Modified: | 08 Apr 2025 07:20 |
| Cite in APA 7: | Assali, S., Attiaoui, A., Koelling, S., Atalla, M. R. M., Kumar, A., Nicolas, J., Chowdhury, F. A., Lemieux-Leduc, C., & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. https://doi.org/10.1063/5.0120505 |
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