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Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics

Simone Assali, A. Attiaoui, S. Koelling, M. R. M. Atalla, A. Kumar, J. Nicolas, F. A. Chowdhury, C. Lemieux-Leduc and Oussama Moutanabbir

Article (2022)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/52058/
Journal Title: Journal of Applied Physics (vol. 132, no. 19)
Publisher: American Institute of Physics
DOI: 10.1063/5.0120505
Official URL: https://doi.org/10.1063/5.0120505
Date Deposited: 18 Apr 2023 14:58
Last Modified: 08 Apr 2024 15:22
Cite in APA 7: Assali, S., Attiaoui, A., Koelling, S., Atalla, M. R. M., Kumar, A., Nicolas, J., Chowdhury, F. A., Lemieux-Leduc, C., & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. https://doi.org/10.1063/5.0120505

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