S. Assali, J. Nicolas and Oussama Moutanabbir
Article (2019)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/42037/ |
| Journal Title: | Journal of Applied Physics (vol. 125, no. 2) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.5050273 |
| Official URL: | https://doi.org/10.1063/1.5050273 |
| Date Deposited: | 18 Apr 2023 15:01 |
| Last Modified: | 25 Sep 2024 16:28 |
| Cite in APA 7: | Assali, S., Nicolas, J., & Moutanabbir, O. (2019). Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. Journal of Applied Physics, 125(2). https://doi.org/10.1063/1.5050273 |
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