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Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn

Jaswant Rathore, Alisha Nanwani, Samik Mukherjee, Sudipta Das, Oussama Moutanabbir and Suddhasatta Mahapatra

Article (2021)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/48169/
Journal Title: Journal of Physics D: Applied Physics (vol. 54, no. 18)
Publisher: IOP Publishing Ltd
DOI: 10.1088/1361-6463/abe1e8
Official URL: https://doi.org/10.1088/1361-6463/abe1e8
Date Deposited: 18 Apr 2023 15:00
Last Modified: 05 Apr 2024 11:49
Cite in APA 7: Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O., & Mahapatra, S. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of Physics D: Applied Physics, 54(18), 185105 (10 pages). https://doi.org/10.1088/1361-6463/abe1e8

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