Jaswant Rathore, Alisha Nanwani, Samik Mukherjee, Sudipta Das, Oussama Moutanabbir and Suddhasatta Mahapatra
Article (2021)
An external link is available for this item| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/48169/ |
| Journal Title: | Journal of Physics D: Applied Physics (vol. 54, no. 18) |
| Publisher: | IOP Publishing Ltd |
| DOI: | 10.1088/1361-6463/abe1e8 |
| Official URL: | https://doi.org/10.1088/1361-6463/abe1e8 |
| Date Deposited: | 18 Apr 2023 15:00 |
| Last Modified: | 08 Apr 2025 07:15 |
| Cite in APA 7: | Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O., & Mahapatra, S. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of Physics D: Applied Physics, 54(18), 185105 (10 pages). https://doi.org/10.1088/1361-6463/abe1e8 |
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