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Oussama MoutanabbirDépartement de génie physique
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Mukherjee, S., Zhang, S., Wajs, M., Spadaro, M. C., Gonzalez-Catala, M., Givan, U., Senz, S., Arbiol, J., Francoeur, S., Volz, S., & Moutanabbir, O. (2024). Thermal Conductivity in Biphasic Silicon Nanowires [Commentaire ou lettre]. Nano Letters. Lien externe
Rossi, M., van Schijndel, T. A. J., Lueb, P., Badawy, G., Jung, J., Peeters, W. H. J., Kölling, S., Moutanabbir, O., Verheijen, M. A., & Bakkers, E. P. A. M. (2024). Stemless InSb nanowire networks and nanoflakes grown on InP. Nanotechnology, 35(41), 415602 (11 pages). Disponible
Nadal, G., Moutanabbir, O., Koelling, S., Rahier, E., Montpetit, L., & Singh, S. (octobre 2024). Atomic-level Mapping of Cd0.9Zn0.1Te Crystals [Communication écrite]. IEEE Nuclear Science Symposium (NSS), Medical Imaging Conference (MIC) and Room Temperature Semiconductor Detector Conference (RTSD), Tampa, FL, USA. Lien externe
Soref, R., De Leonardis, F., Moutanabbir, O., & Daligou, G. T. E. G. (2024). Remote electric powering by germanium photovoltaic conversion of an erbium-fiber laser beam. Chip, 3(3), 100099 (13 pages). Disponible
Soref, R. A., de Leonardis, F., Daligou, G., & Moutanabbir, O. (2024). Directed high-energy infrared laser beams for photovoltaic generation of electric power at remote locations. APL energy, 2(2), 026101 (13 pages). Disponible
Atalla, M. R. M., Lemieux-Leduc, C., Assali, S., Koelling, S., Daoust, P., & Moutanabbir, O. (2024). Extended short-wave infrared high-speed all-GeSn PIN photodetectors on silicon. APL Photonics, 9(5), 056103 (8 pages). Disponible
Rojas-Lobo, N., Atalla, M. R. M., Lemieux‐Leduc, C., & Moutanabbir, O. (janvier 2024). Imaging through fog using silicon-integrated GeSn PIN extended-SWIR photodetectors [Présentation]. Dans SPIE OPTO, 2024, San Francisco, California, United States. Lien externe
Bellemare, C., Atalla, M. R. M., Daoust, P., Koelling, S., Assali, S., & Moutanabbir, O. (janvier 2024). Silicon-integrated SWIR and MWIR GeSn photoconductive devices [Présentation]. Dans SPIE OPTO, 2024, San Francisco, California, United States. Lien externe
Carnio, B. N., Shahriar, B., Attiaoui, A., Atalla, M. R. M., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2024). Probing the infrared properties of a p-doped Ge\(_{0.938}\)Sn\(_{0.062}\) thin film via polarization-dependent FTIR spectroscopy. Applied Physics Letters, 124(7), 072102 (6 pages). Lien externe
Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2024). Advanced Modeling of Electro-Optic Sampling: Nonlinear Vectoral-Field Solutions to Maxwell's Equations. Advanced Physics Research, 202400034 (8 pages). Lien externe
Atalla, M. R. M., Assali, S., Daligou, G., Attiaoui, A., Koelling, S., Daoust, P., & Moutanabbir, O. (2024). Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission. ACS Photonics, 4c00033 (7 pages). Lien externe
Del Vecchio, P., & Moutanabbir, O. (2024). Light-hole spin confined in germanium. Physical Review B, 110(4), 045409 (11 pages). Lien externe
Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Daligou, G., & Moutanabbir, O. (2024). Mid-infrared Imaging Using Strain-Relaxed Ge1–xSnx Alloys Grown on 20 nm Ge Nanowires. Nano Letters, 24(16), 4979-4986. Lien externe
Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., & Moutanabbir, O. (2024). Mid-Infrared Top-Gated Ge<inf>0.82</inf>Sn<inf>0.18</inf> Nanowire Phototransistors. Advanced Optical Materials, 2400096 (7 pages). Lien externe
Carnio, B. N., Zhang, M., Moutanabbir, O., & Elezzabi, A. Y. (2024). A phase-correction approach for enhancing mid-infrared electro-optic sampling in highly nonlinear and dispersive birefringent crystals. Applied Physics Letters, 125(13), 131104 (7 pages). Lien externe
Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Koelling, S., Daoust, P., Luo, L., Daligou, G., Brodeur, J., Kéna-Cohen, S., Peter, Y.-A., & Moutanabbir, O. (2024). Transfer-printed Multiple GeSn Membrane Mid-infrared Photodetectors. IEEE Journal of Selected Topics in Quantum Electronics, 3450302 (12 pages). Lien externe
Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Moutanabbir, O., & Peter, Y.-A. (juillet 2024). Waveguide-coupled GeSn membranes for mid-infrared silicon photonics [Communication écrite]. International Conference on Optical MEMS and Nanophotonics (OMN 2024), San Sebastian, Spain (2 pages). Lien externe
Moutanabbir, O. (janvier 2023). Monolithic mid-infrared GeSn photodetectors on silicon [Présentation]. Dans SPIE OPTO, San Francisco, California, United States. Lien externe
Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). CdSiP2: An emerging crystal for electro-optic sampling from terahertz to the infrared. ACS Applied Optical Materials, 1(5), 997-1003. Lien externe
Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2023). Dark current in monolithic extended-SWIR GeSn PIN photodetectors. Applied Physics Letters, 122(3), 031103 (6 pages). Lien externe
Carnio, B. N., Zhang, M., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Emission and sensing of high-frequency terahertz electric fields using a GaSe crystal. Optics Express, 31(2), 3304-3314. Lien externe
Atalla, M. R. M., Kim, Y., Assali, S., Burt, D., Nam, D., & Moutanabbir, O. (2023). Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power. ACS Photonics, 10(5), 1649-1653. Lien externe
Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Generation of 1732 THz radiation from a CdSiP2 crystal. Optics Letters, 48(5), 1200-1203. Lien externe
Daligou, G., Soref, R., Attiaoui, A., Hossain, J., Atalla, M., Vecchio, P. D., & Moutanabbir, O. (2023). Group IV mid-infrared thermophotovoltaic cells on silicon. IEEE Journal of Photovoltaics, 13(5), 728-735. Lien externe
Carnio, B. N., Zhang, M., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (juillet 2023). High terahertz frequency generation and detection using crystals exhibiting second-order nonlinear effects [Communication écrite]. Optica Nonlinear Optics Topical Meeting 2023, Honolulu, Hawaii. Lien externe
Carnio, B. N., Zhang, M., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2023). Intra-pulse difference frequency generation in ZnGeP2 for high-frequency terahertz radiation generation. Scientific Reports, 13(1), 8 pages. Lien externe
Del Vecchio, P., & Moutanabbir, O. (2023). Light-hole gate-defined spin-orbit qubit. Physical Review B, 107(16), L161406 (6 pages). Lien externe
Andelic, M., Pofelski, A., Koelling, S., Assali, S., Luo, L., Moutanabbir, O., & Botton, G. (avril 2023). Local Bandgap Measurement of Core/Shell Ge/GeSn Nanowires Employing Electron Energy Loss Spectroscopy in Scanning Transmission Electron Microscopy [Communication écrite]. MRS Spring Meeting, San Francisco, California. Lien externe
Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Methodology for computing Fourier-transform infrared spectroscopy interferograms. Applied Optics, 62(17), 4518-4523. Lien externe
Fettu, G., Sipe, J. E., & Moutanabbir, O. (2023). Mid-infrared optical spin injection and coherent control. Physical Review B, 107(16), 165202 (8 pages). Lien externe
Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Nonlinear Photonic Waveguides: A Versatile Platform for Terahertz Radiation Generation (a Review). Laser & Photonics Reviews, 17(4), 19 pages. Lien externe
Moutanabbir, O., Assali, S., Attiaoui, A., Daligou, G., Daoust, P., Vecchio, P. D., Koelling, S., Luo, L., & Rotaru, N. (2023). Nuclear Spin-Depleted, Isotopically Enriched⁷⁰Ge/²⁸ Si⁷⁰Ge Quantum Wells. Advanced Materials, 2305703 (7 pages). Lien externe
Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (juillet 2023). Optical rectification and electro-optic sampling using pnictide and chalcogenide ternary crystals [Communication écrite]. 2023 Nonlinear Optics (NLO 2023), Honolulu, HI, USA. Lien externe
Attiaoui, A., Daligou, G., Assali, S., Skibitzki, O., Schroeder, T., & Moutanabbir, O. (2023). Polarization-tuned fano resonances in all-dielectric short-wave infrared metasurface. Advanced Materials, 35(28), 2300595 (9 pages). Lien externe
Daligou, G., Attiaoui, A., Assali, S., Del Vecchio, P., & Moutanabbir, O. (2023). Radiative carrier lifetime in Ge₁-xSnₓ midinfrared emitters. Physical Review Applied, 20(6), 8 pages. Lien externe
Kim, Y., Assali, S., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Shi, X., Burt, D., Ikonic, Z., Nam, D., & Moutanabbir, O. (2023). Short-wave infrared cavity resonances in a single GeSn nanowire. Nature Communications, 14(1), 4393 (7 pages). Disponible
Carnio, B. N., Moutanabbir, O., & Elezzabi, A. Y. (2023). Terahertz Time-Domain Spectroscopy and Dispersive Fourier Transform Spectroscopy: Two Sides of the Same Coin. Journal of Infrared Millimeter and Terahertz Waves, 12 pages. Lien externe
Koelling, S., Stehouwer, L. E. A., Paquelet Wuetz, B., Scappucci, G., & Moutanabbir, O. (2023). Three-dimensional atomic-scale tomography of buried semiconductor heterointerfaces. Advanced Materials: Interfaces, 10(3), 2201189. Lien externe
Lemieux-Leduc, C., Atalla, M. R. M., Assali, S., Daoust, P., Daligou, G., Brodeur, J., Kéna-Cohen, S., Peter, Y.-A., & Moutanabbir, O. (novembre 2023). Transfer-printing of GeSn membranes for broadband photodetection in the extended short-wave infrared [Communication écrite]. IEEE Photonics Conference (IPC 2023), Orlando, FL, USA (2 pages). Lien externe
Kim, Y.-M., Assali, S., Jung, Y., Burt, D., Zhang, L., Joo, H.-J., Koelling, S., Chen, M., Luo, L., Atalla, M. R. M., Ikonic, Z., Tan, C. S., Moutanabbir, O., & Nam, D. (2022). Evolution of Gesn Lasers Towards Photonic Integration into Practical Applications. Meeting abstracts, MA2022-02(32), 1167-1167. Lien externe
Tan, J. Z. J., Burt, D., Kim, Y.-M., Joo, H.-J., Chen, M., Shi, X., Zhang, L., Tan, C. S., Lim, K. Y. T., Quek, E., Huang, Y.-C., Assali, S., Moutanabbir, O., & Nam, D. (2022). Gesn Bonding Technology for Integrated Laser-on-Chip Photonics. Meeting abstracts, MA2022-02(32), 1177-1177. Lien externe
Moutanabbir, O., & Fortin-Deschênes, M. (2022). (Invited) Van Der Waals Growth and in Situ Studies of Two-Dimensional Pnictogens. Meeting abstracts, MA2022-01(12), 853-853. Lien externe
Moutanabbir, O., Del Vecchio, P., Attiaoui, A., Fettu, G., Rotaru, N., & Assali, S. (2022). (Invited) Optoelectronic Quantum Information Processing: An All-Group IV Integrated Platform. ECS Meeting Abstracts, MA2022-02(32), 1207-1207. Lien externe
Joo, H.-J., Kim, Y., Burt, D., Yung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (janvier 2022). 1D photonic crystal GeSn-on-insulator nanobeam laser [Communication écrite]. Silicon Photonics XVII, San Francisco, CA, USA (9 pages). Lien externe
Assali, S., Koelling, S., Abboud, Z., Nicolas, J., Attiaoui, A., & Moutanabbir, O. (2022). 500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon. Journal of Applied Physics, 132(17), 175304 (9 pages). Lien externe
Paquelet Wuetz, B., Losert, M. P., Koelling, S., Stehouwer, L. E. A., Zwerver, A.-M. J., Philips, S. G. J., Mądzik, M. T., Xue, X., Zheng, G., Lodari, M., Amitonov, S. V., Samkharadze, N., Sammak, A., Vandersypen, L. M. K., Rahman, R., Coppersmith, S. N., Moutanabbir, O., Friesen, M., & Scappucci, G. (2022). Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots. Nature Communications, 13(1), 7730 (8 pages). Lien externe
Carnio, B. N., Zawilski, K. T., Schunemann, P. G., Moutanabbir, O., & Elezzabi, A. Y. (2022). The Coming Age of Pnictide and Chalcogenide Ternary Crystals in the Terahertz Frequency Regime. IEEE Transactions on Terahertz Science and Technology, 12(5), 433-445. Lien externe
Burt, D., Joo, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain. Applied Physics Letters, 120(20), 7 pages. Lien externe
Del Vecchio, P., & Moutanabbir, O. (mars 2022). Electric-dipole spin resonance for light-holes in germanium quantum well [Communication écrite]. 2022 APS March Meeting, Chicago, Illinois. Lien externe
Del Vecchio, P., & Moutanabbir, O. (mai 2022). Electric-Dipole Spin Resonance for Light-Holes in Germanium Quantum Well [Présentation]. Dans MRS Spring Meeting. Lien externe
Attiaoui, A., Fettu, G., Mukherjee, S., Bauer, M., & Moutanabbir, O. (2022). Electronic signature of subnanometer interfacial broadening in heterostructures. Nano Letters, 22(17), 7080-7086. Lien externe
Badawy, G., Zhang, B., Rauch, T., Momand, J., Koelling, S., Jung, J., Gazibegovic, S., Moutanabbir, O., Kooi, B. J., Botti, S., Verheijen, M. A., Frolov, S. M., & Bakkers, E. P. A. M. (2022). Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires. Advanced Science, 9(12), 2105722 (8 pages). Lien externe
Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O., & Nam, D. (2022). Enhanced GeSn Microdisk Lasers Directly Released on Si. Advanced Optical Materials, 10(2), 2101213 (7 pages). Lien externe
Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., Attiaoui, A., Daligou, G., Martí, S., Arbiol, J., & Moutanabbir, O. (2022). Extended-SWIR photodetection in all-Group IV core/shell nanowires. ACS Photonics, 9(3), 914-921. Lien externe
Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (2022). Extracting the complex refractive index of an ultrathin layer at terahertz frequencies with no prior knowledge of substrate absorption loss. IEEE Transactions on Terahertz Science and Technology, 12(4), 385-391. Lien externe
Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., & Elezzabi, A. Y. (juillet 2022). Extracting the linear terahertz properties of thin films using complementary transmission and reflection measurements: Applied to GeSn thin films [Communication écrite]. International Conference on Ultrafast Phenomena (UP) 2022, Montreal, Quebec. Lien externe
Singh, S., Mukherjee, S., Mukherjee, S., Assali, S., Luo, L., Das, S., Moutanabbir, O., & Ray, S. K. (2022). Ge-Ge0.92Sn0.08 core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication. Applied Physics Letters, 120(17). Lien externe
Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Luo, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Son, B., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., Huang, Y.-C., & Nam, D. (2022). Gesnoi Laser Technology for Photonic-Integrated Circuits. ECS Meeting Abstracts, MA2022-02(32), 1168-1168. Lien externe
Attiaoui, A., Assali, S., Luo, L., Daligou, G., Atala, M., Koelling, S., & Moutanabbir, O. (juillet 2022). Group-IV GeSn nanophotonics [Communication écrite]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Lien externe
Schellingerhout, S. G., de Jong, E. J., Gomanko, M., Guan, X., Jiang, Y., Hoskam, M. S. M., Jung, J., Koelling, S., Moutanabbir, O., Verheijen, M. A., Frolov, S. M., & Bakkers, E. P. A. M. (2022). Growth of PbTe nanowires by molecular beam epitaxy. Materials for Quantum Technology, 2(1), 015001. Lien externe
Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (2022). High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response. ACS Photonics, 9(4), 1425-1433. Lien externe
Kim, Y., Assali, S., Burt, D., Jung, Y., Joo, H.-J., Chen, M., Ikonic, Z., Moutanabbir, O., & Nam, D. (janvier 2022). Improved GeSn microdisk lasers directly sitting on Si [Communication écrite]. Silicon Photonics XVII, San Francisco, CA, USA (7 pages). Lien externe
Losert, M. P., Wuetz, B. P., Koelling, S., Stehouwer, L., Zwerver, A.-M. J., Philips, S. G., Madzik, M. G., Xue, X., Zheng, G., Lodari, M., Amitonov, S. V., Samkharadze, N., Sammak, A., Vanderspyen, L., Rahman, R., Coppersmith, S. N., Moutanabbir, O., Friesen, M. G., & Scappucci, G. (mars 2022). Increasing the valley splitting in Si/SiGe heterostructures by exploiting atomic concentration fluctuations [Communication écrite]. 2022 APS March Meeting, Chicago, Illinois. Lien externe
Assali, S., Attiaoui, A., Vecchio, P. D., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2022). A Light-Hole Germanium Quantum Well on Silicon. Advanced Materials, 34(27), e2201192 (11 pages). Lien externe
Chen, M., Jung, Y., Burt, D., Kim, Y., Joo, H.-J., Zhang, L., Assali, S., Moutanabbir, O., Tan, C. S., & Nam, D. (mai 2022). Low-Threshold Lasing in GeSnOI Microdisk Lasers with Reduced Defect Density [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). Lien externe
Carnio, B. N., Attiaoui, A., Assali, S., Moutanabbir, O., Elezzabi, A. Y., Sadwick, L. P., & Yang, T. (janvier 2022). A method based on complementary transmission and reflection measurements for extracting the optical properties of a thin film [Communication écrite]. Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XV, San Francisco, California, United States. Lien externe
Assali, S., Attiaoui, A., Koelling, S., Atalla, M. R. M., Kumar, A., Nicolas, J., Chowdhury, F. A., Lemieux-Leduc, C., & Moutanabbir, O. (2022). Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics. Journal of Applied Physics, 132(19), 11 pages. Lien externe
Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (septembre 2022). Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers [Communication écrite]. International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2022), Turin, Italy. Lien externe
Atalla, M., Assali, S., Koelling, S., Daligou, G., Attiaoui, A., Luo, L., Lemieux-Leduc, C., Abdi, S., & Moutanabbir, O. (mai 2022). Mid-infrared silicon-integrated high-bandwidth GeSn PIN photodetectors and LEDs [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2022), San José, CA, USA (2 pages). Lien externe
Jung, Y., Burt, D., Zhang, L., Kim, Y., Joo, H.-J., Chen, M., Assali, S., Moutanabbir, O., Tan, C. S., & Nam, D. (2022). Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density. Photonics Research, 10(6), 6 pages. Lien externe
Luo, L., Atalla, M. R. M., Assali, S., Koelling, S., Attiaoui, A., & Moutanabbir, O. (novembre 2022). Photodetection from SWIR to MWIR with Ge/GeSn core/shell nanowires [Communication écrite]. IEEE Photonics Conference (IPC 2022), Vancouver, BC, Canada (2 pages). Lien externe
Daligou, G., Assali, S., Attiaoui, A., Bouthillier, É., & Moutanabbir, O. (juillet 2022). Radiative carrier lifetime in GeSn mid-infrared emitters [Communication écrite]. IEEE Photonics Society Summer Topicals Meeting Series (SUM 2022), Cabo San Lucas, Mexico (2 pages). Lien externe
Abdi, S., Assali, S., Atalla, M. R. M., Koelling, S., Warrender, J. M., & Moutanabbir, O. (2022). Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11. Journal of Applied Physics, 131(10), 105304 (9 pages). Lien externe
Andelic, M., Pofelski, A., Assali, S., Koelling, S., Luo, L., Moutanabbir, O., & Botton, G. A. (2022). Structural and Chemical Characterization of Ge/GeSn Core/Shell Nanowires. Microscopy and Microanalysis, 28(S1), 2430-2431. Lien externe
Perla, P., Faustmann, A., Kolling, S., Zellekens, P., Deacon, R., Fonseka, H. A., Kolzer, J., Sato, Y., Sanchez, A. M., Moutanabbir, O., Ishibashi, K., Grutzmacher, D., Lepsa, M. I., & Schapers, T. (2022). Te-doped selective-area grown InAs nanowires for superconducting hybrid devices. Physical Review Materials, 6(2), 024602 (9 pages). Lien externe
Burt, D., Jooa, H.-J., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D.-H., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y.-C., & Nam, D. (janvier 2022). Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain [Communication écrite]. Silicon Photonics XVII. Lien externe
Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (mai 2021). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells . Dans CLEO: Science and Innovations 2021, San Jose, California, United States. Publié dans Conference on Lasers and Electro-Optics, 56. Lien externe
Moutanabbir, O., & Fortin-Deschênes, M. (2021). (Invited) Two-Dimensional Pnictogens: Van Der Waals Growth, Stability, and Phase Transformation. ECS Meeting Abstracts, MA2021-01(14), 655-655. Lien externe
Joo, H.-J., Kim, Y., Burt, D., Jung, Y., Zhang, L., Chen, M., Parluhutan, S. J., Kang, D.-H., Lee, C., Assali, S., Ikonic, Z., Moutanabbir, O., Cho, Y.-H., Tan, C. S., & Nam, D. (2021). 1D photonic crystal direct bandgap GeSn-on-insulator laser. Applied Physics Letters, 119(20), 201101 (6 pages). Lien externe
Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (2021). All-Group IV Transferable Membrane Mid-Infrared Photodetectors. Advanced Functional Materials, 31(3), 9 pages. Lien externe
Mukherjee, S., Assali, S., & Moutanabbir, O. (2021). Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects. Nano Letters, 21(23), 9882-9888. Lien externe
Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M., Belyanin, A. A., & Smowton, P. M. (mars 2021). Atomic-scale modeling of interface roughness scattering in quantum cascade lasers [Communication écrite]. Novel In-Plane Semiconductor Lasers XX. Lien externe
Groell, L., Attiaoui, A., Assali, S., & Moutanabbir, O. (2021). Combined iodine- and sulfur-based treatments for an effective passivation of GeSn surface. Journal of Physical Chemistry C, 125(17), 9516-9525. Lien externe
Rathore, J., Nanwani, A., Mukherjee, S., Das, S., Moutanabbir, O., & Mahapatra, S. (2021). Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn. Journal of Physics D: Applied Physics, 54(18), 185105 (10 pages). Lien externe
Mukherjee, S., Wajs, M., De la Mata, M., Givan, U., Senz, S., Arbiol, J., Francoeur, S., & Moutanabbir, O. (2021). Disentangling phonon channels in nanoscale heat transport. Physical Review B, 104(7), 075429 (7 pages). Lien externe
Attiaoui, A., Bouthillier, E., Daligou, G., Kumar, A., Assali, S., & Moutanabbir, O. (2021). Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays. Physical Review Applied, 15(1), 014034 (11 pages). Lien externe
Atalla, M. R. M., Assali, S., Attiaoui, A., Lemieux-Leduc, C., Kumar, A., Abdi, S., & Moutanabbir, O. (mai 2021). GeSn membrane mid-infrared photodetectors [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Lien externe
Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J. E. M., & Moutanabbir, O. (2021). Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1-xSnx Semiconductors. Physical Review Applied, 15(2), 13 pages. Lien externe
An, Q., Moutanabbir, O., & Guo, H. (2021). Moire patterns of twisted bilayer antimonene and their structural and electronic transition. Nanoscale, 132(31), 13427-13436. Lien externe
Moutanabbir, O., Assali, S., Gong, X., O'Reilly, E., Broderick, C. A., Marzban, B., Witzens, J., Du, W., Yu, S. Q., Chelnokov, A., Buca, D., & Nam, D. (2021). Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors. Applied Physics Letters, 118(11), 110502 (10 pages). Lien externe
Fettu, G., Sipe, J. E., Moutanabbir, O., Agio, M., Soci, C., & Sheldon, M. T. (août 2021). Optical injection of spin current in direct bandgap GeSn [Présentation]. Dans SPIE Nanoscience + Engineering, San Diego, California, United States. Lien externe
Attiaoui, A., Assali, S., Del-Vecchio, P., Nicolas, J., & Moutanabbir, O. (mai 2021). Tuning Light-Hole Optical Transition in Highly Tensile Strained Germanium Quantum Wells [Communication écrite]. Conference on Lasers and Electro-Optics (CLEO 2021), San José, CA, USA (2 pages). Lien externe
Luo, L., Assali, S., Atalla, M. R. M., Koelling, S., & Moutanabbir, O. (2020). Tunable Shortwave Infrared and Midwave Infrared Optoelectronics in Germanium/Germanium Tin Core/Shell Nanowires. Meeting abstracts, MA2020-01(22), 1321-1321. Lien externe
Fortin-Deschênes, M., & Moutanabbir, O. (mai 2020). (Invited) Growth of Van Der Waals Materials: New Insights from Real-Time Studies [Résumé]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montréal, Canada. Publié dans ECS Meeting Abstracts, MA2020-01(B06 : 2D L). Lien externe
Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (octobre 2020). (Invited) Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, Honolulu, Hawaii, USA. Lien externe
Mukherjee, S., Attiaoui, A., Bauer, M., & Moutanabbir, O. (2020). 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices. ACS Applied Materials and Interfaces, 12(1), 1728-1736. Lien externe
Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (2020). Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering. Physical Review Applied, 13(4), 14 pages. Lien externe
Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (2020). Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors. Semiconductor Science and Technology, 35(9), 9 pages. Lien externe
Nicolas, J., Assali, S., Mukherjee, S., Lotnyk, A., & Moutanabbir, O. (2020). Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn. Crystal Growth and Design, 20(5), 3493-3498. Lien externe
An, Q., Fortin-Deschênes, M., Yu, G., Moutanabbir, O., & Guo, H. (2020). Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys. Journal of Applied Physics, 127(2), 12 pages. Lien externe
Fettu, G., Attiaoui, A., Samik, M., Bauer, M., & Moutanabbir, O. (2020). Electronic and Optical Properties of Short-Period Si/Sige Superlattices: Effects of Interfacial Atomic-Scale Roughness. ECS Meeting Abstracts, MA2020-01(G01 : Sili), 1305-1305. Lien externe
Assali, S., Attiaoui, A., Atalla, M., Alain, D., Kumar, A., Mukherjee, S., Nicolas, J., Koelling, S., & Moutanabbir, O. (octobre 2020). Engineering SiGeSn Semiconductors for MIR and THz Opto-electronic Devices [Communication écrite]. ECS Meeting Abstracts. Lien externe
Assali, S., Attiaoui, A., Atalla, M. R. M., Dijkstra, A., Aashish, K., Mukherjee, S., Abdi, S., & Moutanabbir, O. (mai 2020). Epitaxial GeSn and its integration in MIR optoelectronics [Communication écrite]. Science and Innovations 2020 (CLEO), Washington, D.C.. Lien externe
Groell, L., Abdi, S., Assali, S., Atalla, M., Attiaoui, A., & Moutanabbir, O. (mai 2020). Germanium Tin Surface Passivation and Its Effect on the Optoelectronic Performances [Communication écrite]. 237th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS 2020), Montreal, Canada. Lien externe
Persichetti, L., Montanari, M., Ciano, C., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Mukherjee, S., Moutanabbir, O., Capellini, G., Virgilio, M., & De Seta, M. (2020). Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells. Crystals, 10(3), 179 (13 pages). Lien externe
Cousineau, É., Mukherjee, S., Simone, A., Nicolas, J., & Moutanabbir, O. (2020). Lattice Vibrational Modes in Epitaxial Metastable Germanium-Tin Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1320-1320. Lien externe
Fortin-Deschenes, M., Zschiesche, H., Mente, T. O., Locatelli, A., Jacobberger, R. M., Genuzio, F., Lagos, M. J., Biswas, D., Jozwiak, C., Miwa, J. A., Ulstrup, S., Bostwick, A., Rotenberg, E., Arnold, M. S., Botton, G. A., & Moutanabbir, O. (2020). Pnictogens allotropy and phase transformation during van der waals growth. Nano Letters, 20(11), 8258-8266. Lien externe
Koelling, S., Assali, S., Atalla, M., Kumar, A., Attiaoui, A., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale [Communication écrite]. SiGe, Ge, and Related Compounds: Materials, Processing, and Devices (PRiME 2020). Publié dans ECS Transactions, 98(5). Lien externe
von den Driesch, N., Wirths, S., Troitsch, R., Mussler, G., Breuer, U., Moutanabbir, O., Grutzmacher, D., & Buca, D. (2020). Thermally activated diffusion and lattice relaxation in (Si)GeSn materials. Physical Review Materials, 4(3), 033604 (6 pages). Lien externe
Abdi, S., Atalla, M., Assali, S., Kumar, A., Groell, L., Koelling, S., & Moutanabbir, O. (2020). Towards Ultra-Low Specific Contact Resistance on P-Type and N-Type Narrow Bandgap GeSn Semiconductors. ECS Meeting Abstracts, MA2020-01(22), 1322-1322. Lien externe
Nateghi, N., Samik, M., Cardinal, D., Jacobberger, R. M., Way, A. J., de la Mata, M., Martel, R., Desjardins, P., Arbiol, J., Arnold, M. S., & Moutanabbir, O. (2020). Van Der Waals Growth of III-V Semiconductors on Graphene. ECS Meeting Abstracts, MA2020-01(B06 : 2D L), 835-835. Lien externe
Del Vecchio, P., Lodari, M., Sammak, A., Scappucci, G., & Moutanabbir, O. (2020). Vanishing Zeeman energy in a two-dimensional hole gas. Physical Review B, 102(11), 12 pages. Lien externe
Assali, S., Abdi, S., Atalla, M., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Groell, L., Kumar, A., Luo, L., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (octobre 2019). (Si)GeSn Semiconductors for Integrated Optoelectronics, Quantum Electronics, and More [Résumé]. 236th ECS Meeting, Atlanta, GA. Publié dans ECS Meeting Abstracts, MA2019-02(25). Lien externe
Fortin-Deschênes, M., Waller, O., An, Q., Lagos, M. J., Botton, G. A., Guo, H., & Moutanabbir, O. (2019). 2D Antimony–Arsenic Alloys. Small, 16(3), 7 pages. Lien externe
Jacobberger, R. M., Murray, E. A., Fortin-Deschênes, M., Göltl, F., Behn, W. A., Krebs, Z. J., Levesque, P. L., Savage, D. E., Smoot, C., Lagally, M. G., Desjardins, P., Martel, R., Brar, V., Moutanabbir, O., Mavrikakis, M., & Arnold, M. S. (2019). Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale, 11(11), 4864-4875. Lien externe
Fortin-Deschênes, M., Jacobberger, R. M., Deslauriers, C.-A., Waller, O., Bouthillier, É., Arnold, M. S., & Moutanabbir, O. (2019). Dynamics of Antimonene-Graphene Van Der Waals Growth. Advanced Materials, 31(21), e1900569 (7 pages). Lien externe
Persichetti, L., Ciano, C., Virgilio, M., Montanari, M., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zöllner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Rew, K., Paul, D. J., Mukherjee, S., Moutanabbir, O., Scuderi, M., Nicotra, G., Grange, T., ... Deschler, F. (août 2019). Electron state coupling in asymmetric Ge/SiGe quantum wells (Conference Presentation) [Présentation]. Dans Physical Chemistry of Semiconductor Materials and Interfaces XVIII, San Diego, CA, USA. Lien externe
Assali, S., Nicolas, J., & Moutanabbir, O. (2019). Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation. Journal of Applied Physics, 125(2). Lien externe
Moutanabbir, O., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Nicolas, J., Mukherjee, S., & Assali, S. (mai 2019). Germanium-tin semiconductors : a versatile silicon-compatible platform [Communication écrite]. VII Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Kyoto, Japan. Lien externe
Assali, S., Attiaoui, A., Bouthillier, É., Del Vecchio, P., Kumar, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (mai 2019). Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics [Communication écrite]. Conference on Lasers and Electro-Optics, San Jose, California. Lien externe
Montanari, M., Ciano, C., Persichetti, L., Di Gaspare, L., Virgilio, M., Capellini, G., Zoellner, M., Skibitzki, O., Stark, D., Scalari, G., Faist, J., Paul, D. J., Grange, T., Birner, S., Scuderi, M., Nicotra, G., Moutanabbir, O., Mukherjee, S., Baldassarre, L., ... De Seta, M. (septembre 2019). High-Quality n-Type Ge/SiGe Multilayers for THz Quantum Cascade Lasers [Communication écrite]. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019), Paris, France (2 pages). Lien externe
Ciano, C., Di Gaspare, L., Montanari, M., Persichetti, L., Baldassarre, L., Ortolani, M., Capellini, G., Skibitzki, O., Zöllner, M., Faist, J., Scalari, G., Stark, D., Paul, D. J., Rew, K., Moutanabbir, O., Mukherjee, S., Grange, T., Birner, S., Virgilio, M., & De Seta, M. (2019). n-type Ge/SiGe Multi Quantum-Wells for a THz Quantum Cascade Laser. ECS Transactions, 93(1), 63-66. Lien externe
Assali, S., Elsayed, M., Nicolas, J., Liedke, M. O., Wagner, A., Butterling, M., Krause-Rehberg, R., & Moutanabbir, O. (2019). Vacancy complexes in nonequilibrium germanium-tin semiconductors. Applied Physics Letters, 114(25), 6 pages. Lien externe
Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A., & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages. Lien externe
Mukherjee, S., Bauer, M., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Atomistic and Optical Properties of Group IV Ultrathin Superlattices [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Bouthillier, É., Assali, S., Nicolas, J., & Moutanabbir, O. (septembre 2018). Decoupling Strain and Composition Effects on Ge₁₋YSny Lattice Vibrations [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Mamun, M. A., Tapily, K., Moutanabbir, O., Baumgart, H., & Elmustafa, A. A. (2018). Effect of hydrogen implantation on the mechanical properties of AlN throughout ion-induced splitting. ECS Journal of Solid State Science and Technology, 7(4), P180-P184. Lien externe
Attiaoui, A., Wirth, S., Blanchard-Dionne, A.-P., Meunier, M., Hartmann, J. M., Buca, D., & Moutanabbir, O. (2018). Extreme IR absorption in group IV-SiGeSn core-shell nanowires. Journal of Applied Physics, 123(22), 13 pages. Lien externe
Mukherjee, S., Assali, S., & Moutanabbir, O. (2018). Group IV nanowires for carbon-free energy conversion. Semiconductors and Semimetals, 98, 151-229. Lien externe
Mukherjee, S., Nateghi, N., Jacobberger, R. M., Bouthillier, E., de la Mata, M., Arbiol, J., Coenen, T., Cardinal, D., Levesque, P., Desjardins, P., Martel, R., Arnold, M. S., & Moutanabbir, O. (2018). Growth and luminescence of polytypic InP on epitaxial graphene. Advanced Functional Materials, 28(8), 1705592. Lien externe
Abboud, Z., Chagnon, D., Assali, S., Fortin-Deschenes, M., Coia, C., & Moutanabbir, O. (septembre 2018). Hermetic Wafer-Level Packaging of Microbolometers for Uncooled Thermal Cameras [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(29). Lien externe
Xiong, G., Moutanabbir, O., Reiche, M., Harder, R., & Robinson, I. (2018). Investigating strain in silicon-on-insulator nanostructures by coherent X-ray diffraction. Dans Fan, C., & Zhao, Z. (édit.), Synchrotron radiation in materials science (p. 239-274). Lien externe
Moutanabbir, O., & Mukherjee, S. (septembre 2018). Isotopically Programmed Group IV Semiconductors: A Versatile Platform for Quantum Technologies [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Attiaoui, A., Assali, S., Nicolas, J., & Moutanabbir, O. (septembre 2018). Mapping Strain and Composition Effects on Gesn Band Structure Using Spectroscopic Ellipsometry [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Fortin-Deschenes, M., & Moutanabbir, O. (2018). Recovering the semiconductor properties of the epitaxial group V 2D materials antimonene and arsenene. Journal of Physical Chemistry C, 122(16), 9162-9168. Lien externe
Mukherjee, S., Givan, U., Senz, S., De la Mata, M., Arbiol, J., & Moutanabbir, O. (2018). Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder. Nano Letters, 18(5), 3066-3075. Lien externe
Assali, S., Nicolas, J., Mukherjee, S., Bouthillier, É., Attiaoui, A., & Moutanabbir, O. (septembre 2018). Structure and Optoelectronic Properties of Atomically Random Sn-Rich Gesn Semiconductors [Résumé]. AiMES 2018 Meeting, Cancun, Mexico. Publié dans ECS Meeting Abstracts, MA2018-02(31). Lien externe
Sahamir, S. R., Said, S. M., Sabri, M. F. M., Mahmood, M. S., Bin Kamarudin, M. A., & Moutanabbir, O. (2018). Studies on relation between columnar order and electrical conductivity in HAT6 discotic liquid crystals using temperature-dependent Raman spectroscopy and DFT calculations. Liquid Crystals, 45(4), 522-535. Lien externe
Assali, S., Attiaoui, A., Mukherjee, S., Nicolas, J., & Moutanabbir, O. (2018). TEOS layers for low temperature processing of group IV optoelectronic devices. Journal of Vacuum Science & Technology B, 36(6), 8 pages. Lien externe
Jung, D., Faucher, J., Mukherjee, S., Akey, A., Ironside, D. J., Cabral, M., Sang, X., Lebeau, J., Bank, S. R., Buonassisi, T., Moutanabbir, O., & Lee, M. L. (2017). Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications, 8(1), 14204 (7 pages). Disponible
Fortin-Deschênes, M., Waller, O., Hébert, A., & Moutanabbir, O. (avril 2017). Epitaxial group V 2D materials : growth and electronic properties [Affiche]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona. Non disponible
Chagnon, D., Abboud, Z., & Moutanabbir, O. (août 2017). In situ monitoring of microstructure and phase changes of AuSn solders for hermetic wafer-level packaging [Affiche]. 18th Canadian Semiconductor Science and Technology Conference (CSSTC 2017), Waterloo, Ont.. Lien externe
Mukherjee, S., Nateghi, N., Jacobberger, R., Mata, M., Arbiol, J., Coenen, T., Way, A., Arnold, M., & Moutanabbir, O. (avril 2017). Light emission from InP/graphene hybrid epitaxial structures [Affiche]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona. Non disponible
Fortin-Deschênes, M., Lévesque, P., Martel, R., & Moutanabbir, O. (avril 2017). Mechanisms and dynamics of two-dimensional black phosphorus sublimation [Affiche]. Materials Research Society Spring Meeting & Exhibit (MRS 2017), Phoenix, Arizona. Non disponible
Mukherjee, S., Kodali, N., Isheim, D., Wirths, S., Hartmann, J. M., Buca, D., Seidman, D. N., & Moutanabbir, O. (2017). Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors. Physical Review B, 95(16), 5 pages. Lien externe
Fortin-Deschenes, M., Waller, O., Mentes, T. O., Locatelli, A., Mukherjee, S., Genuzio, F., Levesque, P. L., Hebert, A., Martel, R., & Moutanabbir, O. (2017). Synthesis of antimonene on germanium. Nano Letters, 17(8), 4970-4975. Lien externe
Abboud, Z., & Moutanabbir, O. (2017). Temperature-dependent in situ studies of volatile molecule trapping in low temperature-activated Zr alloy-based getters. Journal of Physical Chemistry C, 121(6), 3381-3396. Lien externe
Fortin-Deschenes, M., Levesque, P. L., Martel, R., & Moutanabbir, O. (2016). Dynamics and mechanisms of exfoliated black phosphorus sublimation. Journal of Physical Chemistry Letters, 7(9), 1667-1674. Lien externe
Moutanabbir, O., Isheim, D., Zugang, M., & Seidman, D. N. (2016). Evidence of sub-10 nm aluminum-oxygen precipitates in silicon. Nanotechnology, 27(20), 7 pages. Lien externe
Mukherjee, S., Watanabe, H., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2016). Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions. Nano Letters, 16(2), 1335-1344. Lien externe
Mukherjee, S., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2016). Mapping isotopes in nanoscale and quantum materials using atom probe tomography. Microscopy and Microanalysis, 22(S3), 652-653. Lien externe
Chagnon, D., Pippel, E., Senz, S., & Moutanabbir, O. (2016). Metal Seed Loss Throughout the Nanowire Growth: Bulk Trapping and Surface Mass Transport. Journal of Physical Chemistry C, 120(5), 2932-2940. Lien externe
Mukherjee, S., Attiaoui, A., Watanabe, H., Isheim, D., Seidman, D. N., & Moutanabbir, O. (mai 2015). 3D atom-by-atom mapping of emerging group IV semiconductors [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible
Collette, M., Moutanabbir, O., & Champagne, A. R. (mai 2015). Electronic transport in silicon nanowires with ordered stacking faults [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17). Lien externe
Nateghi, N., Mukherjee, S., Choubak, S., Nguyen, M., Lévesque, P., Martel, R., Desjardins, P., & Moutanabbir, O. (mai 2015). Growth of III-V semiconductors on silicon oxide/silicon using graphene interlayer [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible
Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., Wirths, S., Pippel, E., Mussler, G., Hartmann, J. M., Mantl, S., Desjardins, P., Buca, D., & Moutanabbir, O. (mai 2015). In situ studies of germanium-tin and silicon-germanium-tin dynamics of phase separation [Affiche]. 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 2015), Montréal, Québec. Non disponible
Mukherjee, S., Givan, U., Senz, S., Bergeron, A., Francoeur, S., De La Mata, M., Arbiol, J., Sekiguchi, T., Itoh, K. M., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2015). Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters, 15(6), 3885-3893. Lien externe
Lewis, J. B., Isheim, D., Moutanabbir, O., Floss, C., & Seidman, D. N. (juillet 2015). Standardization and correction of artifacts in atom-probe tomographic analysis of Allende nanodiamonds [Résumé]. 78th Annual Meeting of the Meteoritical Society, Berkeley, Calif. (1 page). Publié dans Meteoritics & Planetary Science, 50(S1). Lien externe
Scheerschmidt, K., & Moutanabbir, O. (2015). Tracking atomic processes throughout the formation of heteroepitaxial interfaces. Crystal Research and Technology, 50(6), 490-498. Lien externe
Xiong, G., Moutanabbir, O., Reiche, M., Harder, R., & Robinson, I. (2014). Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures. Advanced Materials, 26(46), 7747-7763. Disponible
Moutanabbir, O. (2014). Invited: Heterointegration of Semiconductors: Challenges and Opportunities. Meeting abstracts, MA2014-02(34), 1719-1719. Lien externe
Chagnon, D., Isik, D., Levesque, P. L., Lewis, F., Caza, M.-È., Le, X. T., Poirier, J.-S., Michel, D., Larger, R., & Moutanabbir, O. (2014). Materials Issues in Hermetic Wafer Level Packaging Using Au Thermocompression and Au-Sn Transient Liquid Phase Bonding. Meeting abstracts, MA2014-02(34), 1741-1741. Lien externe
Balois, M. V., Hayazawa, N., Tarun, A., Kawata, S., Reiche, M., & Moutanabbir, O. (2014). Direct optical mapping of anisotropic stresses in nanowires using transverse optical phonon splitting. Nano Letters, 14(7), 3793-3798. Lien externe
Dadwal, U., Kumar, P., Moutanabbir, O., Reiche, M., & Singh, R. (2014). Effect of implantation temperature on the H-induced microstructural damage in AlN. Journal of Alloys and Compounds, 588, 300-304. Lien externe
Lee, S.-M., Pippel, E., Moutanabbir, O., Kim, J.-H., Lee, H.-J., & Knez, M. (2014). In Situ Raman Spectroscopic Study of Al-Infiltrated Spider Dragline Silk under Tensile Deformation. ACS Applied Materials & Interfaces, 6(19), 16827-16834. Lien externe
Fournier-Lupien, J.-H., Chagnon, D., Levesque, P., AlMutairi, A.A. A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.-M., Mantl, S., Buca, D., & Moutanabbir, O. (octobre 2014). In situ studies of germanium-tin and silicon-germanium-tin thermal stability [Communication écrite]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. Lien externe
Fournier-Lupien, J.-H., Chagnon, D., Lévesque, P., AlMutairi, A.A. A., Wirths, S., Pippel, E., Mussler, G., Hartmann, J.-M., Mantl, S., Buca, D., & Moutanabbir, O. (2014). In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability. ECS Meeting Abstracts, MA2014-02(35), 1846-1846. Lien externe
Attiaoui, A., & Moutanabbir, O. (2014). Indirect-to-direct band gap transition in relaxed and strained Ge 1-x-ySixSny ternary alloys. Journal of Applied Physics, 116(6). Lien externe
Chagnon, D., Isik, D., Levesque, P., Lewis, F., Caza, M.-E., Le, X. T., Poirier, J.-S., Michel, D., Larger, R., & Moutanabbir, O. (juillet 2014). Metal-assisted hermetic wafer-level packaging [Communication écrite]. 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014, Tokyo, Japan. Lien externe
Attiaoui, A., & Moutanabbir, O. (octobre 2014). Optical and electronic properties of GeSn and GeSiSn heterostructures and nanowires [Communication écrite]. 6th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico. Lien externe
Attiaoui, A., & Moutanabbir, O. (2014). Optical and Electronic Properties of GeSn and GeSiSn Heterostructures and Nanowires. ECS Meeting Abstracts, MA2014-02(35), 1843-1843. Lien externe
Blumtritt, H., Isheim, D., Senz, S., Seidman, D. N., & Moutanabbir, O. (2014). Preparation of nanowire specimens for laser-assisted atom probe tomography. Nanotechnology, 25(43). Lien externe
Chen, P., Zhang, J. J., Feser, J. P., Pezzoli, F., Moutanabbir, O., Cecchi, S., Isella, G., Gemming, T., Baunack, S., Chen, G., Schmidt, O. G., & Rastelli, A. (2014). Thermal transport through short-period SiGe nanodot superlattices. Journal of Applied Physics, 115(4). Lien externe
Moutanabbir, O., Isheim, D., Blumtritt, H., Senz, S., Pippel, E., & Seidman, D. N. (2013). Colossal injection of catalyst atoms into silicon nanowires. Nature, 496(7443), 78-82. Lien externe
Essig, S., Moutanabbir, O., Wekkeli, A., Nahme, H., Oliva, E., Bett, A. W., & Dimroth, F. (2013). Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity. Journal of Applied Physics, 113(20). Lien externe
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26). Lien externe
Tarun, A., Hayazawa, N., Balois, M. V., Kawata, S., Reiche, M., & Moutanabbir, O. (2013). Stress redistribution in individual ultrathin strained silicon nanowires: a high-resolution polarized Raman study. New Journal of Physics, 15(5). Disponible
Qin, Y., Vogelgesang, R., Eßlinger, M., Sigle, W., Van Aken, P., Moutanabbir, O., & Knez, M. (2012). Bottom-up tailoring of plasmonic nanopeapods making use of the periodical topography of carbon nanocoil templates. Advanced Functional Materials, 22(24), 5157-5165. Lien externe
Moutanabbir, O., Ratto, F., Heun, S., Scheerschmidt, K., Locatelli, A., & Rosei, F. (2012). Dynamic Probe of Atom Exchange During Monolayer Growth. Physical Review B, 85(20). Lien externe
Tong, X., Qin, Y., Guo, X., Moutanabbir, O., Ao, X., Pippel, E., Zhang, L., & Knez, M. (2012). Enhanced catalytic activity for methanol electro-oxidation of uniformly dispersed nickel oxide nanoparticles-carbon nanotube hybrid materials. Small, 8(22), 3390-3395. Lien externe
Baumgart, H., & Moutanabbir, O. (mai 2012). Heterointegration of compound III-V semiconductors by wafer bonding and layer splitting for optoelectronic applications [Communication écrite]. 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan. Lien externe
Hahnel, A., Reiche, M., Moutanabbir, O., Blumtritt, H., Geisler, H., Hontschel, J., & Engelmann, H.-J. (2012). Improving accuracy and precision of strain analysis by energy-filtered nanobeam electron diffraction. Microscopy and Microanalysis, 18(1), 229-40. Lien externe
Wright, C., Mamun, M. A., Tapily, K., Moutanabbir, O., Gu, D., Baumgart, H., & Elmustafa, A. A. (mars 2012). Nanomechanical properties of hydrogen implanted AIN for layer transfer by ion-induced splitting [Affiche]. TMS 141st Annual Meeting and Exhibition, Orlando, Fl.. Non disponible
Senichev, A., Givan, U., Moutanabbir, O., Talalaev, V., & Werner, P. (mars 2012). Near-field scanning optical microscopy of infrared emitting semiconductor nanostructures [Affiche]. 76th Annual Meeting of the DPG and DPG Spring Meeting, Berlin, Germany. Non disponible
Moutanabbir, O. (2011). Group-IV Epitaxial Quantum Dots: Growth Subtleties Unveiled Through Stable Isotope Nanoengineering. Science of Advanced Materials, 3(3), 312-321. Lien externe
Tarun, A., Hayazawa, N., Ishitobi, H., Kawata, S., Reiche, M., & Moutanabbir, O. (2011). Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire. Nano Letters, 11(11), 4780-4788. Lien externe
