S. Assali, J. Nicolas, S. Mukherjee, A. Dijkstra and Oussama Moutanabbir
Article (2018)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/40536/ |
| Journal Title: | Applied Physics Letters (vol. 112, no. 25) |
| Publisher: | AIP Publishing |
| DOI: | 10.1063/1.5038644 |
| Official URL: | https://doi.org/10.1063/1.5038644 |
| Date Deposited: | 18 Apr 2023 15:02 |
| Last Modified: | 08 Apr 2025 07:04 |
| Cite in APA 7: | Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A., & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages. https://doi.org/10.1063/1.5038644 |
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