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Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission

S. Assali, J. Nicolas, S. Mukherjee, A. Dijkstra and Oussama Moutanabbir

Article (2018)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/40536/
Journal Title: Applied Physics Letters (vol. 112, no. 25)
Publisher: AIP Publishing
DOI: 10.1063/1.5038644
Official URL: https://doi.org/10.1063/1.5038644
Date Deposited: 18 Apr 2023 15:02
Last Modified: 18 Apr 2023 15:02
Cite in APA 7: Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A., & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages. https://doi.org/10.1063/1.5038644

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