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Assali, S., Nicolas, J., Mukherjee, S., Dijkstra, A., & Moutanabbir, O. (2018). Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 µm room-temperature optical emission. Applied Physics Letters, 112(25), 5 pages. Lien externe
Fortin-Deschenes, M., Waller, O., Mentes, T. O., Locatelli, A., Mukherjee, S., Genuzio, F., Levesque, P. L., Hebert, A., Martel, R., & Moutanabbir, O. (2017). Synthesis of antimonene on germanium. Nano Letters, 17(8), 4970-4975. Lien externe
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2015). Erratum: Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 106(17). Lien externe
Fournier-Lupien, J.-H., Mukherjee, S., Wirths, S., Pippel, E., Hayazawa, N., Mussler, G., Hartmann, J. M., Desjardins, P., Buca, D., & Moutanabbir, O. (2013). Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys. Applied Physics Letters, 103(26). Lien externe
Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (septembre 2022). Microscopic modeling of interface roughness scattering and application to the simulation of quantum cascade lasers [Communication écrite]. International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2022), Turin, Italy. Lien externe
Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., & De Seta, M. (2020). Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering. Physical Review Applied, 13(4), 14 pages. Lien externe
Mukherjee, S., Kodali, N., Isheim, D., Wirths, S., Hartmann, J. M., Buca, D., Seidman, D. N., & Moutanabbir, O. (2017). Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors. Physical Review B, 95(16), 5 pages. Lien externe
Mukherjee, S., Givan, U., Senz, S., Bergeron, A., Francoeur, S., De La Mata, M., Arbiol, J., Sekiguchi, T., Itoh, K. M., Isheim, D., Seidman, D. N., & Moutanabbir, O. (2015). Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters, 15(6), 3885-3893. Lien externe
Phan, A.-V., & Mukherjee, S. (1999). On Design Sensitivity Analysis in Linear Elasticity by the Boundary Contour Method. Engineering Analysis With Boundary Elements, 23(2), 195-199. Lien externe
Phan, A.-V., Mukherjee, S., & Mayer, J. R. R. A boundary contour formulation for design sensitivity analysis in two-dimensional linear elasticity [Communication écrite]. Canadian conference on applied mechanics (CANCAM 1997), Québec, Canada. Publié dans International Journal of Solids and Structures, 35(16). Lien externe
Phan, A.-V., Mukherjee, S., & Mayer, J. R. R. (1998). Hypersingular Boundary Contour Method for Two-Dimensional Linear Elasticity. Acta Mechanica, 130(3-4), 209-225. Lien externe
Phan, A.-V., Mukherjee, S., & Mayer, J. R. R. (1998). Stresses, Stress Sensitivities and Shape Optimization in Two- Dimensional Linear Elasticity by the Boundary Contour Method. International Journal for Numerical Methods in Engineering, 42(8), 1391-1407. Lien externe
Phan, A.-V., Mukherjee, S., & Mayer, J. R. R. The boundary contour method for two-dimensional linear elasticity with quadratic boundary elements [Communication écrite]. 12th International Conference on Boundary Element Technology (BETECH XII), Knowville, TN. Publié dans Computational Mechanics, 20(4). Lien externe
Snoke, D. W., Hartwell, V., Beaumariage, J., Mukherjee, S., Yoon, Y., Myers, D. M., Steger, M., Sun, Z., Nelson, K. A., & Pfeiffer, L. N. (2023). Reanalysis of experimental determinations of polariton-polariton interactions in microcavities. Physical Review B, 107(16), 18 pages. Lien externe
