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Vacancy complexes in nonequilibrium germanium-tin semiconductors

S. Assali, M. Elsayed, J. Nicolas, M. O. Liedke, A. Wagner, M. Butterling, R. Krause-Rehberg and Oussama Moutanabbir

Article (2019)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/43504/
Journal Title: Applied Physics Letters (vol. 114, no. 25)
Publisher: American Institute of Physics Inc.
DOI: 10.1063/1.5108878
Official URL: https://doi.org/10.1063/1.5108878
Date Deposited: 18 Apr 2023 15:01
Last Modified: 05 Apr 2024 11:41
Cite in APA 7: Assali, S., Elsayed, M., Nicolas, J., Liedke, M. O., Wagner, A., Butterling, M., Krause-Rehberg, R., & Moutanabbir, O. (2019). Vacancy complexes in nonequilibrium germanium-tin semiconductors. Applied Physics Letters, 114(25), 6 pages. https://doi.org/10.1063/1.5108878



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