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Arreguin-Zavala, J., Vasilevskiy, D., Turenne, S., & Masut, R. (juillet 2012). Microwave sintering of Bi₂Te₃- and PbTe-based alloys: Structure and thermoelectric properties [Communication écrite]. ICT/ECT Joint Conference 2012, Aalborg, Denmark. Publié dans Journal of Electronic Materials, 42(7). Lien externe
Andre, C., Vasilevskiy, D., Turenne, S., & Masut, R. (2011). Increase in the density of states in n-type extruded (Bi₍₁₋ₓ₎Sbₓ)₂(Te₍₁₋y₎Sey)₃ thermoelectric alloys. Journal of Physics D: Applied Physics, 44(23), 235401-235401. Lien externe
Andre, C., Vasilevskiy, D., Turenne, S., & Masut, R. (août 2008). Extruded bismuth-telluride-based n-type alloys for waste heat thermoelectric recovery applications [Communication écrite]. 27th International Conference on Thermoelectrics, Corvallis, Oregon. Publié dans Journal of Electronic Materials, 38(7). Lien externe
Allard, M., Masut, R., & Boudreau, M. (2000). Temperature Determination in Optoelectronic Waveguide Modulators. Journal of Lightwave Technology, 18(6), 813-818. Lien externe
Ait Ouali, A., Brebner, J. L., Yip, R. Y. F., & Masut, R. (1999). Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells. Journal of Applied Physics, 86(12), 6803-6809. Lien externe
Ait-Ouali, A., Chennouf, A., Yip, R. Y. F., Brebner, J. L., Leonelli, R., & Masut, R. (1998). Localization of Excitons by Potential Fluctuations and Its Effect on the Stokes Shift in InGaP/InP Quantum Confined Heterostructures. Journal of Applied Physics, 84(10), 5639-5642. Lien externe
Ababou, Y., Masut, R., & Yelon, A. (1998). Low-Pressure Metalorganic Vapor Phase Epitaxy of Inp on (111) Substrates. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 790-793. Lien externe
Ait-Ouali, A., Yip, R. Y. F., Brebner, J. L., & Masut, R. (1998). Strain Relaxation and Exciton Localization Effects on the Stokes Shift in InAsₓP₁₋ₓ/InP Multiple Quantum Wells. Journal of Applied Physics, 83(6), 3153-3160. Lien externe
Allard, M., Boudreau, M., & Masut, R. (juillet 1998). Thermal modelling and temperature measurements in optoelectronic waveguide devices [Communication écrite]. ICAPT '98 : Applications of photonic technology 3 :closing the gap between theory, development, and application, Ottawa, CAN. Lien externe
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R., Yelon, A., Beaudoin, M., Bensaada, A., Leonelli, R., & L'Espérance, G. (1997). Optical absorption and determination of band offset in strain-balanced GaInP/InAsP multiple quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Semiconductor Science and Technology, 12(5), 550-554. Lien externe
Ababou, Y., Desjardins, P., Masut, R., Yelon, A., & L'Espérance, G. (1996). Metalorganic vapor phase epitaxy and structural characterization of InP on Si(111). Canadian Journal of Physics, 74(1), S108-S111. Lien externe
Abadou, Y., Desjardins, P., Chennouf, A., Leonelli, R., Hetheringtin, A., Yelon, A., L'Espérance, G., & Masut, R. (1996). Structural and optical charact. of InP grown on Si(111) by metalorganic vapor phase epitaxy using thermal cycle growth. Journal of Applied Physics, 80(9), 499-505. Lien externe
Ababou, Y., Desjardins, P., Chennouf, A., Masut, R., Yelon, A., Leonelli, R., & L'Espérance, G. (juin 1995). Growth of strain-balanced GaInP/InAsP MQW by LP-MOVPE [Communication écrite]. 6th European workshop on Metal-Organic Vapour Phase Epitaxy and related techniques, Gent, Belgique. Non disponible
Ababou, Y., Masut, R., Yelon, A., & Poulin, S. (1995). Low temperature heteroepitaxy of InP on Si(111) substrates treated with buffered HF solution. Applied Physics Letters, 66(24), 3352-3354. Lien externe
Bercegol, A., Christophe, V., Keshavarz, M. K., Vasilevskiy, D., Turenne, S., & Masut, R. (2016). Hot extruded polycrystalline Mg₂Si with embedded XS₂ nano-particles (X: Mo, W). Journal of Electronic Materials, 46(5), 2668-2675. Lien externe
Beaudry, J. N., Masut, R., & Desjardins, P. (2008). GaAs₁₋ₓNₓ on GaAs(001): Nitrogen Incorporation Kinetics From Trimethylgallium, Tertiarybutylarsine, and 1,1-Dimethylhydrazine Organometallic Vapor-Phase Epitaxy. Journal of Crystal Growth, 310(6), 1040-1048. Lien externe
Bentoumi, G., Yaiche, Z., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. (2008). Low-Temperature Emission in Dilute GaAsN Alloys Grown by Metalorganic Vapor Phase Epitaxy. Journal of Applied Physics, 103(6). Lien externe
Beaudry, J., Shtinkov, N., Masut, R., Desjardins, P., & Rioboo, R. J. J. (2007). Compositional dependence of the elastic constants of dilute GaAs₁₋ₓNₓ alloys. Journal of Applied Physics, 101(11), 113507-1. Lien externe
Bergeron, D., Shtinkov, N., Masut, R., & Desjardins, P. (2005). Green's function matching method for one- and zero-dimensional heterostructures. Physical Review. B, Condensed Matter and Materials Physics, 72(24), 245308. Lien externe
Bentoumi, G., Timoshevskii, V., Madini, N., Cote, M., Leonelli, R., Beaudry, J. N., Desjardins, P., & Masut, R. (2004). Evidence for large configuration-induced band-gap fluctuations in GaAs₁₋ₓNₓ alloys. Physical Review. B, Condensed Matter and Materials Physics, 70(3), 35315.1-35315.5-35315.1-35315.5. Lien externe
Beaudry, J.-N., Masut, R., Desjardins, P., Wei, P., Chicoine, M., Bentoumi, G., Leonelli, R., Schiettekatte, F., & Guillon, S. (2004). Organometallic vapor phase epitaxy of GaAs₁₋ₓNₓ alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 771-775. Lien externe
Beaudoin, M., Desjardins, P., Yip, R. Y.-F., & Masut, R. (2000). Optical and structural properties of InAsP/In(Ga)P multilayers on InP(001): Strained-layer multiple quantum well structures and devices. Dans Manasreh, M. O. (édit.), InP and related compounds : materials, applications and devices . Lien externe
Beaudoin, M., Desjardins, P., Ait Ouali, A., Brebner, J. L., Yip, R. Y. F., Marchand, H., Isnard, L., & Masut, R. (2000). Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsₓP₁₋ₓ /GayIn₁₋yP multilayers on InP(001). Journal of Applied Physics, 87(5), 2320-2326. Lien externe
Beaudoin, M., Bensaada, A., Leonelli, R., Desjardins, P., Masut, R., Isnard, L., Chennouf, A., & L'Espérance, G. (1996). Self-consistent determination of the band offsets in InAsₓP₁₋ₓ/InP strained layer quantum wells and the bowing parameter of bulk InAsₓP₁₋ₓ. Physical review. B, Condensed matter, 53(4), 1990-1996. Lien externe
Beaudoin, M., Masut, R., Isnard, L., Desjardins, P., Bensaada, A., L'Espérance, G., & Leonelli, R. (novembre 1994). Band offsets of InAsxP₁₋x/InP strained layer quantum wells grown by LP-MOVPE using TBAs [Communication écrite]. Microcrystalline and nanocrystalline semiconductors : Symposium F of the 1994 Fall Meeting of the Materials Research Society, Boston, USA. Lien externe
Bensaada, A., Suys, M., Beaudoin, M., Desjardins, P., Isnard, L., Masut, R., Cochrane, R. W., Currie, J. F., & L'Espérance, G. (juin 1995). LP-MOVPE growth and characterization of InₓGa₁₋ₓAs/InP epilayers and multiple quantum wells using tertiarybutylarsine [Communication écrite]. 6th European Workshop on Metal-Organic Vapour Phase Epitaxy and related growth techniques, Gent, Belgium. Non disponible
Bensaada, A., Graham, J. T., Brebner, J. L., Chennouf, A., Cochrane, R. W., Leonelli, R., & Masut, R. (1994). Band alignment in GaₓIn₁₋ₓP/InP heterostructures. Applied Physics Letters, 64(3), 273-275. Lien externe
Bensaada, A., Chennouf, A., Cochrane, R. W., Graham, J. T., Leonelli, R., & Masut, R. (1994). Misfit strain, relaxation, and band-gap shift in GaₓIn₁₋ₓP/InP epitaxial layers. Journal of Applied Physics, 75(6), 3024-3029. Lien externe
Clin, T., Turenne, S., Vasilevskiy, D., & Masut, R. (août 2008). Numerical simulation of the thermomechanical behavior of extruded bismuth telluride alloy module [Communication écrite]. 27th International Conference on Thermoelectrics, Corvallis, Oregon. Publié dans Journal of Electronic Materials, 38(7). Lien externe
Chicoine, M., Beaudoin, C., Roorda, S., Masut, R., & Desjardins, P. (2005). III-V Compliant Substrates Implemented by Nanocavities Introduced by Ion Implantation. Journal of Applied Physics, 97(6). Lien externe
Cova, P., Poulin, S., Grenier, O., & Masut, R. (2005). A Method for the Analysis of Multiphase Bonding Structures in Amorphous SiOₓ Ny Films. Journal of Applied Physics, 97(7). Lien externe
Cova, P., Poulin, S., & Masut, R. (2005). X-Ray Photoelectron Spectroscopy and Structural Analysis of Amorphous Si OₓNy Films Deposited at Low Temperatures. Journal of Applied Physics, 98(9). Lien externe
Chicoine, M., Roorda, S., Masut, R., & Desjardins, P. (2003). Nanocavities in He Implanted InP. Journal of Applied Physics, 94(9), 6116-6121. Lien externe
Cova, P., Masut, R., Grenier, O., & Poulin, S. (2002). Effect of unintentionally introduced oxygen on the electron-cyclotron resonance chemical-vapor deposition of SiNₓ films. Journal of Applied Physics, 92(1), 129-138. Lien externe
Cova, P., Singh, A., & Masut, R. (1999). Simultaneous Analysis of Current-Voltage and Capacitance- Voltage Characteristics of Metal-Insulator-Semiconductor Diodes With a High Mid-Gap Trap Density. Journal of Applied Physics, 85(9), 6530-6538. Lien externe
Cova, P., Singh, A., Medina, A., & Masut, R. (1998). Effect of Doping on the Forward Current-Transport Mechanisms in a Metal-Insulator-Semiconductor Contact to InP:Zn Grown by Metal Organic Vapor Phase Epitaxy. Solid-State Electronics, 42(4), 477-485. Lien externe
Chicoine, M., Roorda, S., Cliche, L., & Masut, R. (1997). Directional effects during ion implantation: lateral mass transport and anisotropic growth. Physical review. B, Condensed matter, 56(3), 1551-1560. Lien externe
Cova, P., Singh, A., & Masut, R. (1997). A self-consistent technique for the analysis of the temperature dependence of current-voltage and capacitance-voltage characteristics of a tunnel metal-insulator-semiconductor structure. Journal of Applied Physics, 82(10), 5217-5226. Lien externe
Cliche, L., Roorda, S., Kajrys, G. E., & Masut, R. (1996). A comparison of annealing kinetics in crystalline and amorphous InP. Journal of Applied Physics, 79(4), 2142-2144. Lien externe
Cleton, F., Sieber, B., Masut, R., Isnard, L., Bonard, J. M., & Ganiere, J. D. (1996). Photon recycling as the dominant process of luminescence generation in an electron-beam excited n-InP epilayer grown on an n⁺-InP substrate. Semiconductor Science and Technology, 11(5), 726-734. Lien externe
Cléton, F., Sieber, B., Bensaada, A., Masut, R., Bonard, J. M., & Ganière, J. D. (1996). Transmission electron microscopy and cathodoluminescence of tensile‐strained GaₓIn₁₋ₓP/InP heterostructures. II. On the origin of luminescence heterogeneities in tensile stress relaxed GaₓIn₁₋ₓP/InP heterostructures. Journal of Applied Physics, 80(2), 837-845. Lien externe
Cleton, F., Sieber, B., Lefebvre, A., Bensaada, A., Masut, R., Bonard, J. M., Ganiere, J. D., & Ambri, M. (1996). Transmission electron-microscopy and cathodoluminescence of tensile-strained GaₓIn₁₋ₓP/InP heterostructures . 1. Spatial variations of the tensile-stress relaxation. Journal of Applied Physics, 80(2), 827-836. Lien externe
Cleton, F., Sieber, B., Isnard, L., Masut, R., Bonard, J. M., & Ganiere, J. D. (mars 1995). Band-to-band recombination in N+ InP substrate: Evidence of photon recycling [Communication écrite]. International Conference on Microscopy of Semiconducting Materials (MSM 1995), Oxford University, UK. Lien externe
Cliche, L., Roorda, S., Chicoine, M., & Masut, R. (février 1995). Beam-solid interactions: directional mass transport by momentum transfer [Communication écrite]. 9th international conference on ion beam modification of materials. Book of abstracts, Canberra (Australia). Lien externe
Cliche, L., Roorda, S., Chicoine, M., & Masut, R. (1995). Directional mass transport by momentum transfer from ion beam to solid. Physical Review Letters, 75(12), 2348-2351. Lien externe
Cliche, L., Roorda, S., & Masut, R. (juin 1994). Viscosity of amorphous inp during room-temperature structural relaxation [Communication écrite]. 10th International Conference on Ion Implantation Technology (IIT 1994), Catania, Italy. Publié dans Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 96(1-2). Lien externe
Cova, P., Masut, R., Tran, C. A., Bensaada, A., & Currie, J. F. (1994). Combustion of effluent gases from a metal-organic vapor phase epitaxy system. Combustion Science and Technology, 97(1-3), 1-11. Lien externe
Cliche, L., Roorda, S., & Masut, R. (1994). Persistent room-temperature relaxation of InP amorphized and compacted by MeV ion beams. Applied Physics Letters, 65(14), 1754-1756. Lien externe
Daoust, P., Desjardins, P., Masut, R., & Côté, M. (2022). Longitudinal piezoelectric, elastic, and dielectric properties of rare-earth aluminum nitride alloys determined by density-functional perturbation theory. Physical Review Materials, 6(3), 13 pages. Lien externe
Daoust, P., Côté, M., Desjardins, P., & Masut, R. (2021). Impact of applied biaxial stress on the piezoelectric, elastic, and dielectric properties of scandium aluminum nitride alloys determined by density functional perturbation theory. AIP Advances, 11(9), 15 pages. Lien externe
Daoust, P., Desjardins, P., Masut, R., Gosselin, V., & Côté, M. (2017). Ab initio piezoelectric properties of Al₀.₅ Sc₀.₅ N : impact of alloy configuration on the d₃₃,f piezoelectric strain coefficient. Physical Review Materials, 1(5), 5 pages. Lien externe
De Andres, A., Ramrez-Jimenez, R., Garcia-Hernandez, M., Lambert-Milot, S., & Masut, R. (2011). Confinement effects on the low temperature magnetic structure of MnP nanocrystals. Applied Physics Letters, 99(18). Lien externe
de Andres, A., Espinosa, A., Prieto, C., Garcia-Hernandez, M., Ramirez-Jimenez, R., Lambert-Milot, S., & Masut, R. (2011). MnP films and MnP nanocrystals embedded in GaP epilayers grown on GaP(001): Magnetic properties and local bonding structure. Journal of Applied Physics, 109(11), 113910. Lien externe
D'arcy Gall, J., Desjardins, P., Petrov, I., Greene, J. E., Paultre, J. E., Masut, R., Gujrathi, S. C., & Roorda, S. (2000). Epitaxial metastable Ge₁₋y Cy (y≤0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites. Journal of Applied Physics, 88(1), 96-104. Lien externe
Desjardins, P., Isnard, L., Marchand, H., & Masut, R. (1998). Competing strain relaxation mechanisms in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 776-780. Lien externe
Desjardins, P., Marchand, H., Isnard, L., & Masut, R. (1997). Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001). Journal of Applied Physics, 81(8), 3501-3511. Lien externe
Desjardins, P., Beaudoin, M., Leonelli, R., L'Espérance, G., & Masut, R. (1996). Structural and optical properties of strain-relaxed InAsP/InP heterostructures grown by metalorganic vapor phase epitaxy on InP(001) using tertiarybutylarsine. Journal of Applied Physics, 80(2), 846-852. Lien externe
Frankland, D., Masut, R., & Leonelli, R. (2002). Growth and Characterization of InAs on (100) InP Ultrathin Single Quantum Wells Using Tertiarybutylarsine and Tertiarybutylphosphine. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 20(3), 1132-1134. Lien externe
Fafard, S., Mccaffrey, J., Feng, Y., Allen, C. N., Marchand, H., Isnard, L., Desjardins, P., Guillon, S., & Masut, R. (juillet 1998). Towards quantum dot laser diodes emitting at 1.5 microns [Communication écrite]. ICAPT '98 : Applications of photonic technology 3 :closing the gap between theory, development, and application, Ottawa, CAN. Lien externe
Gelinas, G., Lanacer, A., Leonelli, R., Masut, R., & Poole, P. J. (2010). Carrier thermal escape in families of InAs/InP self-assembled quantum dots. Physical Review. B, Condensed Matter and Materials Physics, 81(23), 235426. Lien externe
Guillon, S., Yip, R. Y.-F., Desjardins, P., Chicoine, M., Bougrioua, Z., Beaudoin, M., Aït-Ouali, A., & Masut, R. (1998). Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001). Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 781-785. Lien externe
Keshavarz, M. K., Vasilevskiy, D., Masut, R., & Turenne, S. (2016). Mechanical properties of bismuth telluride based alloys with embedded MoS2nano-particles. Materials & Design, 103, 114-121. Lien externe
Keshavarz, M. K., Vasilevskiy, D., Masut, R., & Turenne, S. (juin 2013). Effect of suppression of grain growth of hot extruded (Bi 0.2Sb0.8)2Te3 thermoelectric alloys by MoS2 nanoparticles [Communication écrite]. International Conference on Thermoelectrics 2013, Kobe, Japan. Publié dans Journal of Electronic Materials, 43(6). Lien externe
Keshavarz, M. K., Vasilevskiy, D., Masut, R., & Turenne, S. (2014). Synthesis and characterization of bismuth telluride-based thermoelectric nanocomposites containing MoS2 nano-inclusions. Materials Characterization, 95, 44-49. Lien externe
Keshavarz, M. K., Vasilevskiy, D., Masut, R., & Turenne, S. (juillet 2012). P-Type bismuth telluride based composite thermoelectric materials produced by mechanical alloying and hot extrusion [Communication écrite]. ICT/ECT Joint Conference 2012, Aalborg, Denmark. Publié dans Journal of Electronic Materials, 42(7). Lien externe
Kashi, S., Keshavarz, M. K., Vasilevskiy, D., Masut, R., & Turenne, S. (juillet 2011). Effect of Surface Preparation on Mechanical Properties of Ni Contacts on Polycrystalline (Bi₁₋ₓSbₓ)₂(Te₁₋y Sey)₃ Alloys [Communication écrite]. 30th International Conference on Thermoelectrics (ICT 2011), Traverse City, Michigan, USA. Publié dans Journal of Electronic Materials, 41(6). Lien externe
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R., & Ménard, D. (2016). Surface induced magnetization reversal of MnP nanoclusters embedded in GaP. Journal of Applied Physics, 119(10). Lien externe
Lacroix, C., Lambert-Milot, S., Masut, R., Desjardins, P., & Ménard, D. (2013). Ferromagnetic resonance measurements of GaP epilayers with embedded MnP nanoclusters grown on GaP(001). Physical Review B, 87(2), 024412 (10 pages). Lien externe
Lambert-Milot, S., Gaudet, S., Lacroix, C., Ménard, D., Masut, R., Lavoie, C., & Desjardins, P. (2012). MnP nanoclusters embedded in GaP epitaxial films grown by organometallic vapor-phase epitaxy: A reciprocal space mapping and transmission electron microscopy study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 30(6), 22-22. Lien externe
Levesque, A., Desjardins, P., Leonelli, R., & Masut, R. (2011). Temperature dependence of the photoluminescence spectra from InAs(P)/InP multilayers containing thick quantum dots: Dot-size-dependent carrier dynamics. Physical Review. B, Condensed Matter and Materials Physics, 83(23), 235304. Lien externe
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R., & Ménard, D. (2009). Adjusting the magnetic properties of semiconductor epilayers by the crystallographic orientation of embedded highly anisotropic magnetic nanoclusters. Journal of Applied Physics, 105(7), 07-119. Lien externe
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R., & Ménard, D. (2008). Magnetic Anisotropy in Gap(001) Epilayers Containing Mnp Nanoclusters Observed by Angle Dependent Ferromagnetic Resonance Measurements. Journal of Applied Physics, 103(7). Lien externe
Lambert-Milot, S., Lacroix, C., Ménard, D., Masut, R., Desjardins, P., Garcia-Hernandez, M., & De Andres, A. (2008). Metal-Organic Vapor Phase Epitaxy of Crystallographically Oriented Mnp Magnetic Nanoclusters Embedded in Gap(001). Journal of Applied Physics, 104(8). Lien externe
Levesque, A., Shtinkov, N., Masut, R., & Desjardins, P. (2008). Self-Organization of InAs/InP Quantum Dot Multilayers: Pseudophase Diagram Describing the Transition From Aligned to Antialigned Structures. Physical Review Letters, 100(4). Lien externe
Lacroix, C., Lambert-Milot, S., Desjardins, P., Masut, R., & Ménard, D. (août 2007). Magnetic anisotropy in GaP with embedded MnP nanoclusters [Communication écrite]. 13th Canadian Semiconductor Technology Conference (CSTC 2007), Montréal, Québec. Non disponible
Lanacer, A., Shtinkov, N., Desjardins, P., Masut, R., & Leonelli, R. (2007). Optical Emission From InAs/InP Self-Assembled Quantum Dots: Evidence for As/P Intermixing. Semiconductor Science and Technology, 22(12), 1282-1286. Lien externe
Lanacer, A., Chabot, J. F., Côté, M., Leonelli, R., Frankland, D., & Masut, R. (2005). Raman study of optical phonons in ultrathin InAs/InP single strained quantum wells. Physical Review. B, Condensed Matter and Materials Physics, 7207(7), 075349. Lien externe
Masut, R. (2023). Poisson's equation in semiconductors: impact of charge depletion on Hall effect measurements. Lien externe
Masut, R. (2022). Highlighting non-parabolic bands in semiconductors. European Journal of Physics, 43(1), 15 pages. Lien externe
Masut, R., André, C., & Vasilevskiy, D. (2022). Hot Extruded Bulk Polycrystalline (Bi1-xSbx)2(Te1-ySey)3 Alloys: Electron Transport and Lattice Thermal Conductivity. Journal of Electronic Materials, 52, 11 pages. Lien externe
Masut, R. (2022). Role of deep defects on the transport properties of polycrystalline thermoelectric alloys and composites. Journal of Electronic Materials, 51(9), 4816-4823. Lien externe
Masut, R. (2022). Ubiquity of the kinetic compensation effect: A consequence of the existence of a maximum in energy dissipation. Journal of Applied Physics, 132(8), 11 pages. Lien externe
Masut, R., Vasilevskiy, D., & Keshavarz, M. K. (2021). Elastic modulus and internal friction of thermoelectric composites: Enthalpy–entropy compensation. Journal of Applied Physics, 129(24), 11 pages. Lien externe
Masut, R., André, C., Vasilevskiy, D., & Turenne, S. (2020). Charge transport anisotropy in hot extruded bismuth telluride: Scattering by acoustic phonons. Journal of Applied Physics, 128(11), 10 pages. Lien externe
Masut, R. (2018). Incorporation of Si during vapor phase epitaxy of III-V compounds: evidence of an enthalpy-entropy compensation effect. Journal of Applied Physics, 124(9), 7 pages. Lien externe
Monette, G., Nateghi, N., Masut, R., Francoeur, S., & Ménard, D. (2012). Plasmonic enhancement of the magneto-optical response of MnP nanoclusters embedded in GaP epilayers. Physical Review B, 86(24), 245312 (12 pages). Lien externe
Malikova, L., Pollak, F. H., Masut, R., Desjardins, P., & Mourokh, L. G. (2003). Temperature Dependent Contactless Electroreflectance Study of Intersubband Transitions in a Self-Assembled InAs/InP (001) Quantum Dot Structure. Journal of Applied Physics, 94(8), 4995-4998. Lien externe
Marchand, H., Desjardins, P., Guillon, S., Paultre, J.-E., Bougrioua, Z., Yip, R. Y.-F., & Masut, R. (1997). Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized islands on InP(001). Journal of Electronic Materials, 26(10), 1205-1213. Lien externe
Marchand, H., Desjardins, P., Guillon, S., Paultre, J. E., Bougrioua, Z., Yip, R. Y. F., & Masut, R. (1997). Metalorganic vapor phase epitaxy of coherent self-assembled inAs nanometer-sized islands in InP(001). Applied Physics Letters, 71(4), 527-529. Lien externe
Masut, R., Tran, C. A., Beaudoin, M., & Leonelli, R. (février 1995). Strained InAs/InP quantum wells and quantum dots for optoelectronic device applications [Communication écrite]. Circular-Grating Light-Emitting Sources, San Jose, CA, USA. Lien externe
Nateghi, N., & Masut, R. (2022). Manganese phosphide nanoclusters embedded in epitaxial gallium phosphide grown from the vapor phase: Non-negligible role of Mn diffusion in growth kinetics. Journal of Vacuum Science & Technology A, 40(5), 9 pages. Lien externe
Nateghi, N., Lambert-Milot, S., & Masut, R. (2020). Epitaxial to axiotaxial texture evolution in endotaxial MnP films grown on GaP (100). Journal of Vacuum Science & Technology A, 38(3), 8 pages. Lien externe
Nateghi, N., Lambert-Milot, S., Ménard, D., & Masut, R. (2016). Manganese phosphide thin films and nanorods grown on gallium phosphide and on glass substrates. Journal of Crystal Growth, 442, 75-80. Lien externe
Nateghi, N., Ménard, D., & Masut, R. (2014). Large interface diffusion in endotaxial growth of MnP films on GaP substrates. Journal of Applied Physics, 116(13), 133512-133512. Lien externe
Nazareno, H. N., & Masut, R. (1997). Bloch oscillations in a Boltzmann transport equation formalism under the relaxation time approximation. Solid State Communications, 101(11), 819-823. Lien externe
Py-Renaudie, A., Daoust, P., Cote, M., Desjardins, P., & Masut, R. (2020). Ab initio piezoelectric properties of wurtzite ZnO-based alloys: Impact of the c/a cell ratio. Physical Review Materials, 4(5), 053601 (9 pages). Lien externe
Prieto-Vargas, L., Turenne, S., Vasilevskiy, D., & Masut, R. (octobre 2013). Design optimization by numerical simulation of segmented-legs Bi 2Te3 based thermoelectric generator module [Communication écrite]. Materials Science and Technology Conference and Exhibition (MS and T 2013), Montréal, Québec. Non disponible
Picard, M., Turenne, S., Vasilevskiy, D., & Masut, R. (juillet 2012). Numerical simulation of performance and thermomechanical behavior of thermoelectric modules with segmented bismuth-telluride-based legs [Communication écrite]. ICT/ECT Joint Conference 2012, Aalborg, Denmark. Publié dans Journal of Electronic Materials, 42(7). Lien externe
Paki, P., Leonelli, R., Isnard, L., & Masut, R. (2000). Excitons in Ultrathin InAs/InP Quantum Wells: Interplay Between Extended and Localized States. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 18(3), 956-959. Lien externe
Paki, P., Leonelli, R., Isnard, L., & Masut, R. (1999). Exciton Resonances in Ultrathin InAs/InP Quantum Wells. Applied Physics Letters, 74(10), 1445-1447. Lien externe
Paki, P., Leonelli, R., Isnard, L., & Masut, R. (1999). Optical Properties of Submonolayer Inas/Inp Quantum Dots on Vicinal Surfaces. Journal of Applied Physics, 86(12), 6789-6792. Lien externe
Raymond, S., Labrie, D., Girard, J.-F., Poirier, S., Awirothananon, S., Poole, P. J., Marchand, H., Desjardins, P., & Masut, R. (novembre 2000). Tuning of the electronic properties of self-assembled InAs/InP quantum dots by rapid thermal annealing [Communication écrite]. Semiconductor quantum dots II, Boston, USA. Non disponible
Roorda, S., Cliche, L., Chicoine, M., & Masut, R. (février 1995). Novel beam effect - mass-transport due to the lateral component of the ion momentum [Communication écrite]. International Conference on Ion Beam Modification of Materials, Canberra, Australia. Publié dans Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 106(1-4). Lien externe
Schmidt, N., Nateghi, N., Lacroix, C., Menard, D., & Masut, R. (2022). Manganese phosphide nano-clusters embedded in a polystyrene matrix. Journal of Magnetism and Magnetic Materials, 562, 169705 (10 pages). Lien externe
Shtinkov, N., Desjardins, P., Masut, R., & Cote, M. (2006). Nitrogen incorporation and lattice constant of strained dilute GaAs₁₋ₓNₓ layers on GaAs (001): an ab initio study. Physical Review. B, Condensed Matter and Materials Physics, 74(3), 035211 (8 pages). Lien externe
Shtinkov, N., Turcotte, S., Beaudry, J. N., Desjardins, P., & Masut, R. (2004). Electronic and Optical Properties of Gaasn/Gaas Quantum Wells: a Tight-Binding Study. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(4), 1606-1609. Lien externe
Shtinkov, N., Desjardins, P., Masut, R., & Vlaev, S. J. (2004). Lateral confinement and band mixing in ultrathin semiconductor quantum wells with steplike interfaces. Physical Review. B, Condensed Matter and Materials Physics, 70(15), 155302. Lien externe
Shtinkiv, N., Desjardins, P., & Masut, R. (juillet 2004). Localized and extended states in semiconductor quantum wells with wire-like interface Islands [Communication écrite]. 27th international conference on the physics of semiconductors, Flagstaff, Arizona, USA. Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. (2003). Empirical tight-binding model for the electronic structure of dilute GaNAs alloys. Physical Review. B, Condensed Matter and Materials Physics, 67(8), 081202. Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. (décembre 2002). Lateral confinement of carriers in ultrathin semiconductor quantum wells [Communication écrite]. 4th International Conference on Low Dimensional Structures and Devices (LDSD 2002), Fortaleza, Brazil. Publié dans Microelectronics Journal, 34(5-8). Lien externe
Shtinkov, N., Desjardins, P., & Masut, R. (2002). Electronic states of ultrathin InAs/InP (001) quantum wells: a tight-binding study of the effects of band offset, strain, and intermixing. Physical Review. B, Condensed Matter and Materials Physics, 66(19), 195303 (8 pages). Lien externe
Spila, T., Desjardins, P., Vailionis, A., Kim, H., Taylor, N., Cahill, D. G., Greene, J. E., Guillon, S., & Masut, R. (2002). Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si₀.₇ Ge₀.₃ layers on Si(001). Journal of Applied Physics, 91(6), 3579-3588. Lien externe
Sundararaman, C. S., Tazlauanu, M., Mihelich, P., Bensaada, A., & Masut, R. (avril 1996). 1-10 GHz interface engineered SiNₓ/InP/InGaAs HIGFET technology [Communication écrite]. 1996 8th International Conference on Indium Phosphide and Related Materials, Schwabisch Gmund, Ger. Lien externe
Singh, A., Masut, R., & Bensaada, A. (septembre 1994). Characterization of interface states in thin epitaxial film In₀.₇₅Ga₀.₂₅P/Ag diodes [Communication écrite]. Surfaces, vacuum and their applications. Publié dans AIP Conference Proceedings, 378(1). Lien externe
Sundararaman, C. S., Milhelich, P., Masut, R., & Currie, J. F. (1994). Conductance study of silicon nitride/InP capacitors with an In₂S₃ interface control layer. Applied Physics Letters, 64(17), 2279-2281. Lien externe
Singh, A., Cova, P., & Masut, R. (1994). Reverse I-V and C-V characteristics of Schottky-barrier type diodes on Zn doped InP epilayers grown by metalorganic vapor-phase epitaxy. Journal of Applied Physics, 76(4), 2336-2342. Lien externe
Turcotte, S., Beaudry, J.-N., Masut, R., Desjardins, P., Bentoumi, G., & Leonelli, R. (2012). Abnormal Broadening of the Optical Transitions in (Ga,As)N/GaAs Quantum Wells. Physical Review B, 85(3), 033304 (4 pages). Lien externe
Turenne, S., Clin, T., Vasilevskiy, D., & Masut, R. (2010). Finite element thermomechanical modeling of large area thermoelectric generators based on bismuth telluride alloys. Journal of Electronic Materials, 39(9), 1926-1933. Lien externe
Turcotte, S., Larouche, S., Beaudry, J.-N., Martinu, L., Masut, R., Desjardins, P., & Leonelli, R. (2009). Evidence of valence band perturbations in GaAsN/GaAs(001): Combined variable-angle spectroscopic ellipsometry and modulated photoreflectance investigation. Physical Review B, 80(8). Lien externe
Turcotte, S., Beaudry, J. N., Masut, R., Desjardins, P., Bentoumi, G., & Leonelli, R. (2008). Experimental Investigation of the Variation of the Absorption Coefficient With Nitrogen Content in GaasN and GaInAsN Grown on GaAs (001). Journal of Applied Physics, 104(8), 083511. Lien externe
Timoshevskii, V., Cote, M., Gilbert, G., Leonelli, R., Turcotte, S., Beaudry, J. N., Desjardins, P., Larouche, S., Martinu, L., & Masut, R. (2006). Experimental and Theoretical Studies of the E+ Optical Transition in GaAsN Alloys. Physical Review B, 74(16). Lien externe
Turcotte, S., Shtinkov, N., Desjardins, P., Masut, R., & Leonelli, R. (2004). Empirical Tight-Binding Calculations of the Electronic Structure of Dilute III-V-N Semiconductor Alloys. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 776-780. Lien externe
Tran, C. A., Masut, R., Brebner, J. L., Jouanne, M., Salamancariba, L., Shen, C. C., Sieber, B., & Miri, A. (1994). Atomic layer epitaxy and characterization of InP and InAs/InP heterostructures. Journal of Crystal Growth, 145(1-4), 332-337. Lien externe
Tran, C. A., Masut, R., Brebner, J. L., & Jouanne, M. (1994). Atomic layer epitaxy and structural characterization of InP and InAs/InP heterostructures. Journal of Applied Physics, 75(5), 2398-2405. Lien externe
Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. (1994). E₁-gap resonant enhancement of the raman-scattering from highly strained InAs/InP short-period superlattices. Superlattices and Microstructures, 15(4), 391-397. Lien externe
Tran, C. A., Graham, J. T., Brebner, J. L., & Masut, R. (1994). Interfaces of InAsP/InP multiple quantum wells grown by metalorganic vapor phase epitaxy. Journal of Electronic Materials, 23(12), 1291-1296. Lien externe
Tran, C. A., Brebner, J. L., Leonelli, R., Jouanne, M., & Masut, R. (1994). Optical phonons in strained single InAs/InP quantum wells: A Raman study. Physical review. B, Condensed matter, 49(16), 11268-11271. Lien externe
Vasilevskiy, D., Keshavarz, M. K., Simard, J.-M., Masut, R., Turenne, S., & Snyder, G. J. (2018). Assessing the thermal conductivity of Cu2xSe alloys undergoing a phase transition via the simultaneous measurement of thermoelectric parameters by a Harman-based setup. Journal of Electronic Materials, 47(6), 3314-3319. Lien externe
Verdier, P., Vasilevskiy, D., Turenne, S., & Masut, R. (2018). Microstructure and Thermoelectric Properties of Hot Extruded Sb-Doped Mg₂Si Using MoS₂ Nano-particles as Lubricant. Journal of Electronic Materials, 47(11), 6833-6841. Lien externe
Vasilevskiy, D., Masut, R., & Turenne, S. (2018). A Phenomenological Model of Unconventional Heat Transport Induced by Phase Transition in Cu2−xSe. Journal of Electronic Materials, 48(4), 1883-1888. Lien externe
Vasilevskiy, D., Simard, J. M., Caillat, T., Masut, R., & Turenne, S. (2016). Consistency of ZT-Scanner for Thermoelectric Measurements from 300 K to 700 K: A Comparative Analysis Using Si₈₀Ge₂₀ Polycrystalline Alloys. Journal of Electronic Materials, 45(3), 1540-1547. Lien externe
Vasilevskiy, D., Simard, J. M., Masut, R., & Turenne, S. (2016). Reduction of Specimen Size for the Full Simultaneous Characterization of Thermoelectric Performance. Journal of Electronic Materials, 46(5), 3007-3011. Lien externe
Vasilevskiy, D., Keshavarz, M. K., Dufourcq, J., Ihou-Mouko, H., Navonne, C., Masut, R., & Turenne, S. Bulk Mg₂Si based n-type thermoelectric material produced by gas atomization and hot extrusion [Communication écrite]. 12th European Conference on Thermoelectrics (ECT 2014), 2014, Madrid, Espagne.. Publié dans Materials Today: Proceedings, 2(2). Lien externe
Vasilevskiy, D., Simard, J. M., Masut, R., & Turenne, S. (2015). System for Simultaneous Harman-Based Measurement of All Thermoelectric Properties, from 240 to 720 K, by Use of a Novel Calibration Procedure. Journal of Electronic Materials, 44(6), 1733-1742. Lien externe
Vasilevskiy, D., Masut, R., & Turenne, S. (juillet 2011). Thermoelectric and Mechanical Properties of Novel Hot-Extruded PbTe n-Type Material [Communication écrite]. 30th International Conference on Thermoelectrics (ICT 2011), Traverse City, Michigan, USA. Publié dans Journal of Electronic Materials, 41(6). Lien externe
Vasilevskiy, D., Bourbia, O., Gosselin, S., Turenne, S., & Masut, R. (2011). Nanostructure characterization of bismuth telluride-based powders and extruded alloys by various experimental methods. Journal of Electronic Materials, 40, 1046-1051. Lien externe
Vasilevskiy, D., Dawood, M. S., Masse, J.-P., Turenne, S., & Masut, R. (2010). Generation of nanosized particles during mechanical alloying and their evolution through the hot extrusion process in bismuth-telluride-based alloys. Journal of Electronic Materials, 39(9), 1890-1896. Lien externe
Vasilevskiy, D., Turenne, S., & Masut, R. (juillet 2008). Thermoelectric extruded alloys for module manufacturing : 10 years of development at École Polytechnique de Montréal [Communication écrite]. 5th European Conference on Thermoelectrics, Paris, France. Lien externe
Vasilevskiy, D., Roy, F., Renaud, E., Masut, R., & Turenne, S. (août 2006). Mechanical Properties of the Interface Between Nickel Contact and Extruded (Bi₁₋ₓSbₓ)₂(Te₁₋ySey)₃ [Communication écrite]. 25th International Conference on Thermoelectrics, Vienne, Autriche. Lien externe
Vasilevskiy, D., Frechette, P., Turenne, S., & Masut, R. (juin 2005). Thermoelectric properties and transport phenomena in (Bi₁₋ₓSbₓ)₂(Te₁₋ySey)₃ quaternary n-type alloys produced by powder metallurgy and extrusion [Communication écrite]. 24th International Conference on Thermoelectrics (ICT 2005), Clemson, SC, USA. Lien externe
Vasilevskiy, D., Sami, A., Simard, J.-M., & Masut, R. (2002). Influence of Se on the electron mobility in extruded Bi₂(Te₁₋ₓSeₓ)₃ (x≤0.125) thermoelectric alloys. Journal of Applied Physics, 92(5), 2610-2613. Lien externe
Wei, P., Chicoine, M., Gujrathi, S., Schiettekatte, F., Beaudry, J. N., Masut, R., & Desjardins, P. (2004). Characterization of GaAs₁₋ₓ Nₓ epitaxial layers by ion beam analysis. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 22(3), 908-911. Lien externe
Watkins, S. P., Ares, R., Masut, R., Tran, C. A., & Brebner, J. L. (1994). Strain effects in high-purity InP epilayers grown on slightly mismatched substrates. Journal of Applied Physics, 75(5), 2460-2465. Lien externe
Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804. Lien externe
Yip, R. Y. F., Desjardins, P., Isnard, L., Ait-Ouali, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. (1998). Band Alignment Engineering for High Speed, Low Drive Field Quantum-Confined Stark Effect Devices. Journal of Applied Physics, 83(3), 1758-1769. Lien externe
Yip, R. Y. F., & Masut, R. (1997). Band alignment strategy for efficient optical modulation in quantum-confined stark effect devices. Journal of Applied Physics, 82(4), 1976-1978. Lien externe
Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. (1997). Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 82(12), 6372-6372. Lien externe
Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. Lien externe
Zhao, Y. G., Zou, Y. H., Huang, X. L., Wang, J. J., Qin, Y. D., Masut, R., & Beaudoin, M. (1998). Differential Reflection Dynamics in InAsₓP₁₋ₓ/InP (x≤0.35) Strained-Multiple-Quantum Wells. Journal of Applied Physics, 83(8), 4430-4435. Lien externe
Zhao, Y. G., Zou, Y. H., Wang, J. J., Qin, Y. D., Huang, X. L., Masut, R., & Bensaada, A. (1998). Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells. Applied Physics Letters, 72(1), 97-99. Lien externe
Zhao, Y. G., Qin, Y. D., Huang, X. L., Wang, J. J., Zou, Y. H., Masut, R., & Beaudoin, M. (1998). Photoexcited Carrier Diffusion Dependence of Differential Reflection Dynamics in InAsₓP₁₋ₓ/InP (x≤0.35) Strained- Multiple-Quantum Wells. Solid State Communications, 105(6), 393-397. Lien externe
Zhao, Y. G., Jing, R., Zou, Y. H., Xia, Z. J., Huang, X. L., Chen, W. X., & Masut, R. (1996). Alloy composition dependence of photoexcited carrier dynamics in GaₓIn₁−ₓP/InP:Fe (x<0.18). Applied Physics Letters, 68(5), 696-698. Lien externe
Zhao, Y. G., Masut, R., Brebner, J. L., Tran, C. A., & Graham, J. T. (1994). Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells. Journal of Applied Physics, 76(10), 5921-5926. Lien externe
