Effect of Doping on the Forward Current-Transport Mechanisms in a Metal-Insulator-Semiconductor Contact to InP:Zn Grown by Metal Organic Vapor Phase Epitaxy

P. Cova, A. Singh, A. Medina and Rémo A. Masut

Article (1998)

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Additional Information:	Nom historique du département: Département de génie physique et de génie des matériaux
Department:	Department of Engineering Physics
Research Center:	GCM - Thin Film Physics and Technology Research Group
PolyPublie URL:	https://publications.polymtl.ca/29752/
Journal Title:	Solid-State Electronics (vol. 42, no. 4)
Publisher:	Elsevier
DOI:	10.1016/s0038-1101(97)00250-5
Official URL:	https://doi.org/10.1016/s0038-1101%2897%2900250-5
Date Deposited:	18 Apr 2023 15:23
Last Modified:	08 Apr 2025 02:20

Cite in APA 7:	Cova, P., Singh, A., Medina, A., & Masut, R. A. (1998). Effect of Doping on the Forward Current-Transport Mechanisms in a Metal-Insulator-Semiconductor Contact to InP:Zn Grown by Metal Organic Vapor Phase Epitaxy. Solid-State Electronics, 42(4), 477-485. https://doi.org/10.1016/s0038-1101%2897%2900250-5
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