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Cova, P., Poulin, S., Grenier, O., & Masut, R. A. (2005). A Method for the Analysis of Multiphase Bonding Structures in Amorphous SiOₓ Ny Films. Journal of Applied Physics, 97(7). Lien externe
Cova, P., Poulin, S., & Masut, R. A. (2005). X-Ray Photoelectron Spectroscopy and Structural Analysis of Amorphous Si OₓNy Films Deposited at Low Temperatures. Journal of Applied Physics, 98(9). Lien externe
Cova, P., Masut, R. A., Grenier, O., & Poulin, S. (2002). Effect of unintentionally introduced oxygen on the electron-cyclotron resonance chemical-vapor deposition of SiNₓ films. Journal of Applied Physics, 92(1), 129-138. Lien externe
Cova, P., Singh, A., & Masut, R. A. (1999). Simultaneous Analysis of Current-Voltage and Capacitance- Voltage Characteristics of Metal-Insulator-Semiconductor Diodes With a High Mid-Gap Trap Density. Journal of Applied Physics, 85(9), 6530-6538. Lien externe
Cova, P., Singh, A., Medina, A., & Masut, R. A. (1998). Effect of Doping on the Forward Current-Transport Mechanisms in a Metal-Insulator-Semiconductor Contact to InP:Zn Grown by Metal Organic Vapor Phase Epitaxy. Solid-State Electronics, 42(4), 477-485. Lien externe
Cova, P., Singh, A., & Masut, R. A. (1997). A self-consistent technique for the analysis of the temperature dependence of current-voltage and capacitance-voltage characteristics of a tunnel metal-insulator-semiconductor structure. Journal of Applied Physics, 82(10), 5217-5226. Lien externe
Cova, P., Masut, R. A., Tran, C. A., Bensaada, A., & Currie, J. F. (1994). Combustion of effluent gases from a metal-organic vapor phase epitaxy system. Combustion Science and Technology, 97(1-3), 1-11. Lien externe
Singh, A., Cova, P., & Masut, R. A. (1994). Reverse I-V and C-V characteristics of Schottky-barrier type diodes on Zn doped InP epilayers grown by metalorganic vapor-phase epitaxy. Journal of Applied Physics, 76(4), 2336-2342. Lien externe
