Reverse I-V and C-V characteristics of Schottky-barrier type diodes on Zn doped InP epilayers grown by metalorganic vapor-phase epitaxy

A. Singh, P. Cova and Rémo A. Masut

Article (1994)

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Department:	Department of Engineering Physics
PolyPublie URL:	https://publications.polymtl.ca/32846/
Journal Title:	Journal of Applied Physics (vol. 76, no. 4)
Publisher:	American Institute of Physics
DOI:	10.1063/1.357611
Official URL:	https://doi.org/10.1063/1.357611
Date Deposited:	18 Apr 2023 15:25
Last Modified:	08 Apr 2025 06:53

Cite in APA 7:	Singh, A., Cova, P., & Masut, R. A. (1994). Reverse I-V and C-V characteristics of Schottky-barrier type diodes on Zn doped InP epilayers grown by metalorganic vapor-phase epitaxy. Journal of Applied Physics, 76(4), 2336-2342. https://doi.org/10.1063/1.357611
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