C. S. Sundararaman, M. Tazlauanu, P. Mihelich, A. Bensaada and Rémo A. Masut
Paper (1996)
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| Additional Information: | Laboratory for Integrated Sensors and Actuators (LISA) |
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| Department: | Department of Engineering Physics |
| Research Center: | Other |
| PolyPublie URL: | https://publications.polymtl.ca/30854/ |
| Conference Title: | 1996 8th International Conference on Indium Phosphide and Related Materials |
| Conference Location: | Schwaebisch-Gmuend, Germany |
| Conference Date(s): | 1996-04-21 - 1996-04-25 |
| Publisher: | IEEE |
| DOI: | 10.1109/iciprm.1996.492389 |
| Official URL: | https://doi.org/10.1109/iciprm.1996.492389 |
| Date Deposited: | 18 Apr 2023 15:24 |
| Last Modified: | 25 Sep 2024 16:12 |
| Cite in APA 7: | Sundararaman, C. S., Tazlauanu, M., Mihelich, P., Bensaada, A., & Masut, R. A. (1996, April). 1-10 GHz interface engineered SiNₓ/InP/InGaAs HIGFET technology [Paper]. 1996 8th International Conference on Indium Phosphide and Related Materials, Schwaebisch-Gmuend, Germany. https://doi.org/10.1109/iciprm.1996.492389 |
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