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1-10 GHz interface engineered SiNₓ/InP/InGaAs HIGFET technology

C. S. Sundararaman, M. Tazlauanu, P. Mihelich, A. Bensaada and Rémo A. Masut

Paper (1996)

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Additional Information: Laboratory for Integrated Sensors and Actuators (LISA)
Department: Department of Engineering Physics
Research Center: Other
PolyPublie URL: https://publications.polymtl.ca/30854/
Conference Title: 1996 8th International Conference on Indium Phosphide and Related Materials
Conference Location: Schwaebisch-Gmuend, Germany
Conference Date(s): 1996-04-21 - 1996-04-25
Publisher: IEEE
DOI: 10.1109/iciprm.1996.492389
Official URL: https://doi.org/10.1109/iciprm.1996.492389
Date Deposited: 18 Apr 2023 15:24
Last Modified: 05 Apr 2024 11:20
Cite in APA 7: Sundararaman, C. S., Tazlauanu, M., Mihelich, P., Bensaada, A., & Masut, R. A. (1996, April). 1-10 GHz interface engineered SiNₓ/InP/InGaAs HIGFET technology [Paper]. 1996 8th International Conference on Indium Phosphide and Related Materials, Schwaebisch-Gmuend, Germany. https://doi.org/10.1109/iciprm.1996.492389

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