 | Monter d'un niveau |
Sundararaman, C. S., Tazlauanu, M., Mihelich, P., Bensaada, A., & Masut, R. A. (avril 1996). 1-10 GHz interface engineered SiNₓ/InP/InGaAs HIGFET technology [Communication écrite]. 1996 8th International Conference on Indium Phosphide and Related Materials, Schwaebisch-Gmuend, Germany. Lien externe
Sundararaman, C. S., & Currie, J. F. (1995). Characteristics of sinx/inp/in0.53ga0.47as/Inp heterostructure insulated gate (hig)fets with an in2s3 interface control layer. IEEE Transactions on Electron Devices, 42(6), 1197-1199. Lien externe
Sundararaman, C. S., & Currie, J. F. (1995). Performance of interface engineered SiNₓ/ICL/InP/In₀.₅₃Ga₀.₄₇As/InP doped channel HIGFET's. IEEE Electron Device Letters, 16(12), 554-556. Lien externe
Sundararaman, C. S., Milhelich, P., Masut, R. A., & Currie, J. F. (1994). Conductance study of silicon nitride/InP capacitors with an In₂S₃ interface control layer. Applied Physics Letters, 64(17), 2279-2281. Lien externe
Sundararaman, C. S., & Currie, J. F. (décembre 1991). Rapid thermally annealed ohmic contacts to high temperature Zn implanted InP [Communication écrite]. Emerging Optoelectronic Technologies, Bangalore, India. Lien externe
