C. S. Sundararaman and John F. Currie
Article (1995)
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| Department: | Department of Engineering Physics |
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| PolyPublie URL: | https://publications.polymtl.ca/31703/ |
| Journal Title: | IEEE Transactions on Electron Devices (vol. 42, no. 6) |
| Publisher: | Institute of Electrical and Electronics Engineers |
| DOI: | 10.1109/16.387260 |
| Official URL: | https://doi.org/10.1109/16.387260 |
| Date Deposited: | 18 Apr 2023 15:25 |
| Last Modified: | 08 Apr 2025 06:52 |
| Cite in APA 7: | Sundararaman, C. S., & Currie, J. F. (1995). Characteristics of sinx/inp/in0.53ga0.47as/Inp heterostructure insulated gate (hig)fets with an in2s3 interface control layer. IEEE Transactions on Electron Devices, 42(6), 1197-1199. https://doi.org/10.1109/16.387260 |
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