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Characteristics of sinx/inp/in0.53ga0.47as/Inp heterostructure insulated gate (hig)fets with an in2s3 interface control layer

C. S. Sundararaman and John F. Currie

Article (1995)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/31703/
Journal Title: IEEE Transactions on Electron Devices (vol. 42, no. 6)
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/16.387260
Official URL: https://doi.org/10.1109/16.387260
Date Deposited: 18 Apr 2023 15:25
Last Modified: 05 Apr 2024 11:21
Cite in APA 7: Sundararaman, C. S., & Currie, J. F. (1995). Characteristics of sinx/inp/in0.53ga0.47as/Inp heterostructure insulated gate (hig)fets with an in2s3 interface control layer. IEEE Transactions on Electron Devices, 42(6), 1197-1199. https://doi.org/10.1109/16.387260

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