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Collaboration networkThis graph maps the connections between all the collaborators of {}'s publications listed on this page.
Each link represents a collaboration on the same publication. The thickness of the link represents the number of collaborations.
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Word cloudA word cloud is a visual representation of the most frequently used words in a text or a set of texts. The words appear in different sizes, with the size of each word being proportional to its frequency of occurrence in the text. The more frequently a word is used, the larger it appears in the word cloud. This technique allows for a quick visualization of the most important themes and concepts in a text.
In the context of this page, the word cloud was generated from the publications of the author {}. The words in this cloud come from the titles, abstracts, and keywords of the author's articles and research papers. By analyzing this word cloud, you can get an overview of the most recurring and significant topics and research areas in the author's work.
The word cloud is a useful tool for identifying trends and main themes in a corpus of texts, thus facilitating the understanding and analysis of content in a visual and intuitive way.
Sundararaman, C. S., Tazlauanu, M., Mihelich, P., Bensaada, A., & Masut, R. A. (1996, April). 1-10 GHz interface engineered SiNₓ/InP/InGaAs HIGFET technology [Paper]. 1996 8th International Conference on Indium Phosphide and Related Materials, Schwaebisch-Gmuend, Germany. External link
Sundararaman, C. S., & Currie, J. F. (1995). Characteristics of sinx/inp/in0.53ga0.47as/Inp heterostructure insulated gate (hig)fets with an in2s3 interface control layer. IEEE Transactions on Electron Devices, 42(6), 1197-1199. External link
Sundararaman, C. S., & Currie, J. F. (1995). Performance of interface engineered SiNₓ/ICL/InP/In₀.₅₃Ga₀.₄₇As/InP doped channel HIGFET's. IEEE Electron Device Letters, 16(12), 554-556. External link
Sundararaman, C. S., Milhelich, P., Masut, R. A., & Currie, J. F. (1994). Conductance study of silicon nitride/InP capacitors with an In₂S₃ interface control layer. Applied Physics Letters, 64(17), 2279-2281. External link
Sundararaman, C. S., & Currie, J. F. (1991, December). Rapid thermally annealed ohmic contacts to high temperature Zn implanted InP [Paper]. Emerging Optoelectronic Technologies, Bangalore, India. External link
