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Performance of interface engineered SiNₓ/ICL/InP/In₀.₅₃Ga₀.₄₇As/InP doped channel HIGFET's

C. S. Sundararaman and John F. Currie

Article (1995)

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Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/31704/
Journal Title: IEEE Electron Device Letters (vol. 16, no. 12)
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/55.475585
Official URL: https://doi.org/10.1109/55.475585
Date Deposited: 18 Apr 2023 15:25
Last Modified: 05 Apr 2024 11:21
Cite in APA 7: Sundararaman, C. S., & Currie, J. F. (1995). Performance of interface engineered SiNₓ/ICL/InP/In₀.₅₃Ga₀.₄₇As/InP doped channel HIGFET's. IEEE Electron Device Letters, 16(12), 554-556. https://doi.org/10.1109/55.475585

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