C. S. Sundararaman and John F. Currie
Article (1995)
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| Department: | Department of Engineering Physics |
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| Research Center: | GCM - Thin Film Physics and Technology Research Group |
| Funders: | NSERC, FCAR Device Team and Research Center |
| PolyPublie URL: | https://publications.polymtl.ca/31704/ |
| Journal Title: | IEEE Electron Device Letters (vol. 16, no. 12) |
| Publisher: | Institute of Electrical and Electronics Engineers |
| DOI: | 10.1109/55.475585 |
| Official URL: | https://doi.org/10.1109/55.475585 |
| Date Deposited: | 18 Apr 2023 15:25 |
| Last Modified: | 08 Apr 2025 06:52 |
| Cite in APA 7: | Sundararaman, C. S., & Currie, J. F. (1995). Performance of interface engineered SiNₓ/ICL/InP/In₀.₅₃Ga₀.₄₇As/InP doped channel HIGFET's. IEEE Electron Device Letters, 16(12), 554-556. https://doi.org/10.1109/55.475585 |
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