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Ressejac, I. C., Landsberger, L. M., Currie, J. F., & Isnard, L. (2002). Micromachining and Operation of a Bistable Electrothermal Actuator. [Micro-usinage et fonctionnement d'un actuateur électrothermique bistable]. Canadian Journal of Electrical and Computer Engineering, 27(1), 41-45. Lien externe
Tashtoush, A., Landsberger, L. M., Essalik, A., Kahrizi, M., Paranjape, M., Currie, J. F., & Pandy, A. (2001). Experimental Characterization of the Si/Al/Tetramethylammonium Hydroxide System. Journal of The Electrochemical Society, 148(7), C456-C460. Lien externe
Ressejac, I. C., Landsberger, L. M., & Currie, J. F. (2000). Bistable Microelectrothermal Actuator in a Standard Complementary Metal-Oxide-Semiconductor Process. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 18(2), 746-749. Lien externe
Fortin, V., Gujrathi, S. C., Gagnon, G., Gauvin, R., Currie, J. F., Ouellet, L., & Tremblay, Y. (1999). Effect of in Situ Plasma Oxidation of Tin Diffusion Barrier for Alsicu/Tin/Ti Metallization Structure of Integrated Circuits. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 17(2), 423-431. Lien externe
Currie, J. F., & Sundararaman, C. S. (1999). Field effect devices. (Brevet no US5986291). Lien externe
Renault, O., Briand, D., Delabouglise, G., Currie, J. F., & Labeau, M. (1999). Integration of a Sensitive Material to a Silicon-Based Device for Co Detection. Sensors and Actuators. A, Physical, 74(1-3), 225-228. Lien externe
Currie, J. F., Essalik, A., & Marusic, J. C. (1999). Micromachined Thin Film Solid State Electrochemical CO₂, NO₂ and SO₂ Gas Sensors. Sensors and Actuators. B, Chemical, 59(2-3), 235-241. Lien externe
Yip, R. Y.-F., Desjardins, P., Isnard, L., Aït-Ouali, A., Bensaada, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band alignment and barrier height considerations for the quantum-confined Stark effect. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 801-804. Lien externe
Yip, R. Y. F., Desjardins, P., Isnard, L., Aït-Ouali, A., Marchand, H., Brebner, J. L., Currie, J. F., & Masut, R. A. (1998). Band Alignment Engineering for High Speed, Low Drive Field Quantum-Confined Stark Effect Devices. Journal of Applied Physics, 83(3), 1758-1769. Lien externe
Fortin, V., Gagnon, G., Caron, M., Gujrathi, S. C., Currie, J. F., Ouellet, L., Tremblay, Y., & Biberger, M. (1998). The determination of phases formed in AlSiCu/TiN/Ti contact metallization structure of integrated circuits by x-ray diffraction. Journal of Applied Physics, 83(1), 132-138. Lien externe
Gujrathi, S. C., Gagnon, G., Fortin, V., Caron, M., Currie, J. F., Ouellet, L., & Tremblay, Y. (1998). Elastic Recoil Detection Using Time-of-Flight for Analysis of Tin/Alsicu/Tin/Ti Contact Metallization Structures. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 138, 661-668. Lien externe
Leclerc, S., Lecours, A., Caron, M., Richard, E., Turcotte, G., & Currie, J. F. (1998). Electron Cyclotron Resonance Plasma Chemical Vapor Deposited Silicon Nitride for Micromechanical Applications. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 881-884. Lien externe
Leclerc, S., Antaki, R., & Currie, J. F. (1998). Novel Simple and Complementary Metal-Oxide-Semiconductor- Compatible Membrane Release Design and Process for Thermal Sensors. Journal of vacuum science and technology. A, Vacuum, surfaces, and films, 16(2), 876-880. Lien externe
Briand, D., Labeau, M., Currie, J. F., & Delabouglise, G. (1998). Pd-Doped Sno2 Thin Films Deposited by Assisted Ultrasonic Spraying Cvd for Gas Sensing: Selectivity and Effect of Annealing. Sensors and Actuators. B, Chemical, 48(1-3), 395-402. Lien externe
Nikpour, B., Naseh, S., Landsberger, L. M., Kahrizi, M., Paranjape, M., Antaki, R., & Currie, J. F. (1998). Release-Control Structures for Cantilever-Based Sensors. Sensors and Materials, 10(5), 287-296. Lien externe
Yip, R. Y. F., Ait Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Erratum: Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 82(12), 6372-6372. Lien externe
Briand, D., Delabouglise, G., Lecours, A., Currie, J. F., & Labeau, M. (juillet 1997). Pd-doped SnO₂ thin films for CO detection [Communication écrite]. 2nd International Symposium on New Materials for Fuel-Cell and Modern Battery Systems II, Montréal, Québec. Non disponible
Essalik, A., Marusic, J. C., Currie, J. F., Pelletier-Boudreau, E., Richard, E., & Leclerc, S. (juillet 1997). Preparation and characterization of fully integrated gas sensors: the case of CO₂ sensor [Communication écrite]. 2nd International Symposium on New Materials for Fuel-Cell and Modern Battery Systems II, Montréal, Québec. Non disponible
Yip, R. Y.-F., Aït-Ouali, A., Bensaada, A., Desjardins, P., Beaudoin, M., Isnard, L., Brebner, J. L., Currie, J. F., & Masut, R. A. (1997). Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 81(4), 1905-1915. Lien externe
Meunier, M., Izquierdo, R., Shen, B., Lecours, A., Allard, M., Bergeron, A., Hanus, F., Boughaba, S., Ivanov, D., Currie, J. F., Laude, L., & Yelon, A. (novembre 1995). Applications of laser processing for sensors and actuators [Communication écrite]. MRS Fall Symposium, Boston, MA, USA. Lien externe
Lecuyer, J., Mouton, A., Legros, A., Selmani, A., Currie, J. F., & Decterov, S. (1996). Applications of selenium-based alloys for digital radiography. Nuclear Instruments & Methods in Physics Research. Section. A, Accelerators, Spectrometers, Detectors and Associated Equipment, 380(1-2), 493-496. Lien externe
Caron, M., Gagnon, G., Fortin, V., Currie, J. F., Ouellet, L., Tremblay, Y., Biberger, M., & Reynolds, R. (1996). Calculation of a Al-Ti-O-N quaternary isotherm diagram for the prediction of stable phases in TiN/Al alloy contact metallization. Journal of Applied Physics, 79(8), 4468-4470. Lien externe
Tait, R. N., Landsberger, L. M., Currie, J. F., McKinnon, G. H., Parameswaran, M., Robinson, A. M., & Gale, D. J. (mai 1996). A design and implementation methodology for micromachining [Communication écrite]. Canadian Conference on Electrical and Computer Engineering : Glimpse into the 21st century, Calgary, AB, Canada. Lien externe
Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Fortin, V., Tremblay, Y., Oueller, L., Wang, M., Biberger, M., & Wong, F. (juin 1996). Effect of a TiN anti-reflecting coating on the performance of Ti/TiN/AlSiCu metallization of VLSI devices [Communication écrite]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Non disponible
Ouellet, O. L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Biberger, M., & Reynolds, R. (1996). The effect of an oxygen plasma exposure on the reliability of a ti/tin contact metallization. Journal of Applied Physics, 79(8, pt. 1), 4438-4443. Lien externe
Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Fortin, V., Tremblay, Y., Ouellet, L., Wang, M., Biberger, M., & Wong, F. (juin 1996). Effect of the oxidation of TiN barrier on its efficiency as a diffusion barrier in AlSiCu metallization of VLSI devices [Communication écrite]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Non disponible
Gagnon, G., Gujrathi, S. C., Caron, M., Currie, J. F., Tremblay, Y., Ouellet, L., Biberger, M., & Reynolds, R. (1996). Effect of the oxidation of TiN on the stability of the Al/TiN interface. Journal of Applied Physics, 80(1), 188-195. Lien externe
Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., & Biberger, M. (1996). The effect of the Ti glue layer in an integrated Ti/TiN/Ti/AlSiCu/TiN contact metallization process. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 2627-2635. Lien externe
Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., & Biberger, M. (1996). Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallization. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 3502-3508. Lien externe
Gagnon, G., Currie, J. F., Brebner, J. L., & Darwall, T. (1996). Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealing. Journal of Applied Physics, 79(10), 7612-7620. Lien externe
Ciureanu, P., Rudkowski, P., Rudkowska, G., Ménard, D., Britel, M., Currie, J. F., Strom-Olsen, J. O., & Yelon, A. (novembre 1995). Giant magnetoimpedance effect in soft and ultrasoft magnetic fibers [Communication écrite]. 40th annual conference on magnetism and magnetic materials, Philadelphia, Pennsylvania. Publié dans Journal of Applied Physics, 79(8). Lien externe
Shah, S. A., Zeng, A., Jackson, M. K., Pouliot, L., Lecours, A., & Currie, J. F. (1996). Guided surface waves in photoconductive excitation. IEEE Microwave and Guided Wave Letters, 6(9), 309-311. Lien externe
Caron, M., Gagnon, G., Gauvin, R., Hovington, P., Drouin, D., Currie, J. F., Tremblay, Y., Ouellet, L., Bigerger, M., & Wong, F. (juin 1996). An iterative procedure based on Monte Carlo simulation to determine the thickness and composition of VLSI metallization [Communication écrite]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Non disponible
Lecours, A., Caron, M., Ciureanu, P., Turcotte, G., Ivanov, D., Yelon, A., & Currie, J. F. (1996). Laser patterning of thin-film electrochemical gas sensors. Applied Surface Science, 96-98, 341-346. Lien externe
Ciureanu, P., Rudkowski, P., Rudkowska, G., Ménard, D., Currie, J. F., Strom-Olsen, J. O., & Yelon, A. (1996). Magnetoimpedance effect in rapidly solidified soft magnetic fibers. Journal of Magnetism and Magnetic Materials, 157-158, 432-433. Lien externe
Lang, T., Caron, M., Izquierdo, R., Ivanov, D., Currie, J. F., & Yelon, A. (1996). Material characterization of sputtered sodium-ion conductive ceramics for a prototype CO₂ micro-sensor. Sensors and Actuators. B, Chemical, 31(1-2), 9-12. Lien externe
Shah, S. A., Zeng, A., Jackson, M. K., Wong, W. S., Pouliot, L., Lecours, A., & Currie, J. F. (1996). Millimeter-wave time-resolved measurement near a discontinuity - Separating temporally overlapped incident and reflected signals. IEEE Microwave and Guided Wave Letters, 6(2), 79-81. Lien externe
Izquierdo, R., Bergeron, A., Meunier, M., Ivanov, D., Currie, J. F., & Yelon, A. (octobre 1996). Pulsed laser deposition of NASICON and sodium nitride thin films for the fabrication of gas sensors [Communication écrite]. Electrochemical Society Annual Meeting, San Antonio, TX, USA. Non disponible
Izquierdo, R., Hanus, F., Lang, T., Ivanov, D., Meunier, M., Laude, L., Currie, J. F., & Yelon, A. (1996). Pulsed laser deposition of NASICON thin films. Applied Surface Science, 96-98, 855-858. Lien externe
Naseh, S., Landsberger, L. M., Paranjape, M., Nikpour, B., Kahrizi, M., Antaki, R., & Currie, J. F. (mai 1996). Release-control structure for post-process release of a micromachined cantilever [Communication écrite]. Canadian Conference on Electrical and Computer Engineering : Glimpse into the 21st century, Calgary, AB, Canada. Lien externe
Shah, S. A., Zeng, A., Wong, W. S., Jackson, M. K., Pouliot, L., Lecours, A., & Currie, J. F. (1996). Separating temporally-overlapped wave-forms with electrooptic sampling. Optical and Quantum Electronics, 28(7), 953-960. Lien externe
Beïque, G., Caron, M., Currie, J. F., & Meunier, M. (1995). Caractérisation structurale de couches minces de silicium polycristallin fabriquées par dépôt chimique en phase vapeur sous basse pression du SiH₄ et dopées en phosphore in situ. [Structural characterization of polysilicon thin-films fabricated by low-pressure chemical-deposition of silane and doped in-situ with phosphorus]. Canadian Journal of Physics, 73(7-8), 526-529. Lien externe
Sundararaman, C. S., & Currie, J. F. (1995). Characteristics of sinx/inp/in0.53ga0.47as/Inp heterostructure insulated gate (hig)fets with an in2s3 interface control layer. IEEE Transactions on Electron Devices, 42(6), 1197-1199. Lien externe
Shi, M. K., Legros, A., Mouton, A., Selmani, A., & Currie, J. F. (1995). Crystallization of vacuum-evaporated Se studied by near infrared microscope. Journal of Materials Science Letters, 14(18), 1278-1280. Lien externe
Bensaada, A., Suys, M., Beaudoin, M., Desjardins, P., Isnard, L., Masut, R. A., Cochrane, R. W., Currie, J. F., & L'Espérance, G. (juin 1995). LP-MOVPE growth and characterization of InₓGa₁₋ₓAs/InP epilayers and multiple quantum wells using tertiarybutylarsine [Communication écrite]. 6th European Workshop on Metal-Organic Vapour Phase Epitaxy and related growth techniques, Ghent, Belgium. Non disponible
Sundararaman, C. S., & Currie, J. F. (1995). Performance of interface engineered SiNₓ/ICL/InP/In₀.₅₃Ga₀.₄₇As/InP doped channel HIGFET's. IEEE Electron Device Letters, 16(12), 554-556. Lien externe
Ivanov, D., Caron, M., Ouellet, I., Blain, A. S., Hendricks, A. N., & Currie, J. F. (1995). Structural and dielectric properties of spin-on barium-strontium titanate thin films. Journal of Applied Physics, 77(6), 2666-26671. Lien externe
Diawara, Y., Currie, J. F., Yelon, A., Petrova-Koch, V., & Nikolov, A. (novembre 1994). Temperature dependence of stresses and H desorption in porous silicon [Communication écrite]. 1994 Fall Meeting, Boston, MA, USA. Lien externe
Gagnon, G., Currie, J. F., Beique, G., Brebner, J. L., Gujrathi, S. C., & Ouellet, L. (1994). Characterization of reactively evaporated TiN layers for diffusion barrier applications. Journal of Applied Physics, 75(3), 1565-1570. Lien externe
Cova, P., Masut, R. A., Tran, C. A., Bensaada, A., & Currie, J. F. (1994). Combustion of effluent gases from a metal-organic vapor phase epitaxy system. Combustion Science and Technology, 97(1-3), 1-11. Lien externe
Sundararaman, C. S., Milhelich, P., Masut, R. A., & Currie, J. F. (1994). Conductance study of silicon nitride/InP capacitors with an In₂S₃ interface control layer. Applied Physics Letters, 64(17), 2279-2281. Lien externe
Savaria, Y., Chtchvyrkov, D., & Currie, J. F. (mai 1994). Fast CMOS voltage-controlled ring oscillator [Communication écrite]. IEEE International Symposium on Circuits and Systems (ISCAS 1994), London, England. Lien externe
Currie, J. F., Ivanov, D. V., & Lecours, A. (1994). Implantable medication dispensing device. (Brevet no US5366454). Lien externe
Currie, J. F., Ivanov, D., Ciureanu, P., Lecours, A., Caron, M., Sacher, E., Turcotte, G., Yelon, A., & Lacroix, J. Nasicon thin film carbon dioxide sensor [Communication écrite]. Electrochemical Society Conference. Non disponible
Ivanov, D., Currie, J. F., Bouchard, H., Lecours, A., Andrian, J., Yelon, A., & Poulin, S. (1994). Sputtered silicate-limit NASICON thin films for electrochemical sensors. Solid State Ionics, 67(3-4), 295-299. Lien externe
Bouchard, H., Azelmad, A., Currie, J. F., Meunier, M., Blain, S., & Darwall, T. (avril 1993). Thermal Stress in Doped Silicate Glasses (B,P) Deposited by PECVD and LPCVD [Communication écrite]. 1993 MRS Spring Meeting, San Francisco, CA. Publié dans MRS Proceedings, 308. Lien externe
Bouchard, H., Azelmad, A., Currie, J. F., & Meunier, M. (1992). Variation de la contrainte des verres de silice sous cycle thermique. [Variations of the stress of silicon glass during annealing]. Canadian Journal of Physics, 70(10-11), 830-833. Lien externe
Sundararaman, C. S., & Currie, J. F. (décembre 1991). Rapid thermally annealed ohmic contacts to high temperature Zn implanted InP [Communication écrite]. Emerging Optoelectronic Technologies, Bangalore, India. Lien externe
Lussier, P., Bélanger, M., Meunier, M., & Currie, J. F. (1989). CF₄-Ar reactive ion etching of gallium arsenide. Canadian Journal of Physics, 67(4), 259-261. Lien externe
Touam, T., Wu, C., Bélanger, M., Currie, J. F., & Najafi, S. I. (septembre 1988). Planar gaas Zn-diffused waveguides: fabrication, characterization and analysis [Communication écrite]. SPIE Integrated Optical Circuit Engineering VI, Boston, MA, United states. Lien externe
Currie, J. F., Savaria, Y., & Dionne, J.-P. (1988). Réalisation d'un diviseur de fréquence numérique sur AsGa. (Rapport technique n° EPM-RT-88-03). Accès restreint
Groleau, R., Currie, J. F., Wertheimer, M. R., Sapieha, J.-E., & Ke-Ming, W. (1986). Chemical characterization of plasma-polymerized hexamethyldisilazane by nuclear elastic recoil detection. Thin Solid Films, 136(1), 85-92. Lien externe
Brebner, J. L., Cochrane, R. W., Groleau, R., Gujrathi, S., Kéroack, D., Lépine, Y., Martin, J.-P., Vanaček, M., Aktik, C., Aktik, M., Azelmad, A., Currie, J. F., Poulin-Dandurand, S., Ranchoux, B., Sacher, E., Tannous, C., Wertheimer, M. R., & Yelon, A. (1985). Progress in amorphous-silicon photovoltaic-device research. Canadian Journal of Physics, 63(6), 786-797. Lien externe
Currie, J. F., Depelsenaire, P., Huot, J. P., Paquin, L., Wertheimer, M. R., Yelon, A., Brassard, C., L'Ecuyer, J., Groleau, R., & Martin, J. P. (1983). Compositional characterization of microwave plasma a-Si: H films. Canadian Journal of Physics, 61(4), 582-590. Lien externe
Meunier, M., Currie, J. F., Wertheimer, M. R., & Yelon, A. (1983). Electrical conduction in biotite micas. Journal of Applied Physics, 54(2), 898-905. Lien externe
Meunier, M., Currie, J. F., Wertheimer, M. R., & Yelon, A. (1981). Activation energies from conductivity-temperature measurements. Journal of Non-Crystalline Solids, 46(3), 433-436. Lien externe
Brassard, C., Groleau, R., L'Écuyer, J., Martin, J., Currie, J. F., Depelsenaire, P., Wertheimer, M. R., & Yelon, A. (1981). Nuclear Scattering Measurements of Composition Profiles IN a-Si : H Multilayer Structures. Journal de Physique Colloques, 42(C4), 795-798. Lien externe
Currie, J. F. (1979). Nonlinearity, coherence, and cooperation. (Rapport technique n° EP-R-79-05). Accès restreint
