V. Fortin, G. Gagnon, M. Caron, S. C. Gujrathi, John F. Currie, L. Ouellet, Y. Tremblay and M. Biberger
Article (1998)
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| Additional Information: | Nom historique du département: Département de génie physique et de génie des matériaux |
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| Department: | Department of Engineering Physics |
| PolyPublie URL: | https://publications.polymtl.ca/29689/ |
| Journal Title: | Journal of Applied Physics (vol. 83, no. 1) |
| Publisher: | American Institute of Physics |
| DOI: | 10.1063/1.366710 |
| Official URL: | https://doi.org/10.1063/1.366710 |
| Date Deposited: | 18 Apr 2023 15:23 |
| Last Modified: | 25 Sep 2024 16:11 |
| Cite in APA 7: | Fortin, V., Gagnon, G., Caron, M., Gujrathi, S. C., Currie, J. F., Ouellet, L., Tremblay, Y., & Biberger, M. (1998). The determination of phases formed in AlSiCu/TiN/Ti contact metallization structure of integrated circuits by x-ray diffraction. Journal of Applied Physics, 83(1), 132-138. https://doi.org/10.1063/1.366710 |
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