<  Retour au portail Polytechnique Montréal

Documents dont l'auteur est "Biberger, M."

Monter d'un niveau
Pour citer ou exporter [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Grouper par: Auteurs ou autrices | Date de publication | Sous-type de document | Aucun groupement
Aller à : F | G | O
Nombre de documents: 7

F

Fortin, V., Gagnon, G., Caron, M., Gujrathi, S. C., Currie, J. F., Ouellet, L., Tremblay, Y., & Biberger, M. (1998). The determination of phases formed in AlSiCu/TiN/Ti contact metallization structure of integrated circuits by x-ray diffraction. Journal of Applied Physics, 83(1), 132-138. Lien externe

G

Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Fortin, V., Tremblay, Y., Oueller, L., Wang, M., Biberger, M., & Wong, F. (juin 1996). Effect of a TiN anti-reflecting coating on the performance of Ti/TiN/AlSiCu metallization of VLSI devices [Communication écrite]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Non disponible

Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Fortin, V., Tremblay, Y., Ouellet, L., Wang, M., Biberger, M., & Wong, F. (juin 1996). Effect of the oxidation of TiN barrier on its efficiency as a diffusion barrier in AlSiCu metallization of VLSI devices [Communication écrite]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Non disponible

Gagnon, G., Gujrathi, S. C., Caron, M., Currie, J. F., Tremblay, Y., Ouellet, L., Biberger, M., & Reynolds, R. (1996). Effect of the oxidation of TiN on the stability of the Al/TiN interface. Journal of Applied Physics, 80(1), 188-195. Lien externe

O

Ouellet, O. L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Biberger, M., & Reynolds, R. (1996). The effect of an oxygen plasma exposure on the reliability of a ti/tin contact metallization. Journal of Applied Physics, 79(8, pt. 1), 4438-4443. Lien externe

Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., & Biberger, M. (1996). The effect of the Ti glue layer in an integrated Ti/TiN/Ti/AlSiCu/TiN contact metallization process. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 2627-2635. Lien externe

Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., & Biberger, M. (1996). Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallization. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 3502-3508. Lien externe

Liste produite: Wed Apr 24 04:02:15 2024 EDT.