Gérald Gagnon, M. Caron, John F. Currie, S. C. Gujrathi, V. Fortin, Y. Tremblay, L. Ouellet, M. Wang, M. Biberger and F. Wong
Paper (1996)
This item is not archived in PolyPublieAdditional Information: | Nom historique du département: Département de métallurgie et de génie des matériaux |
---|---|
Department: | Department of Engineering Physics |
PolyPublie URL: | https://publications.polymtl.ca/31311/ |
Conference Title: | 13th International VLSI Multilevel Interconnection (V-MIC) Conference |
Conference Location: | Santa Clara, CA, USA |
Conference Date(s): | 1996-06-18 - 1996-06-20 |
Publisher: | VMIC Tampa, FL, USA |
Date Deposited: | 18 Apr 2023 15:24 |
Last Modified: | 25 Sep 2024 16:13 |
Cite in APA 7: | Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Fortin, V., Tremblay, Y., Ouellet, L., Wang, M., Biberger, M., & Wong, F. (1996, June). Effect of the oxidation of TiN barrier on its efficiency as a diffusion barrier in AlSiCu metallization of VLSI devices [Paper]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. |
---|---|
Statistics
Stats are not available on this system.