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Effect of the oxidation of TiN barrier on its efficiency as a diffusion barrier in AlSiCu metallization of VLSI devices

Gérald Gagnon, M. Caron, John F. Currie, S. C. Gujrathi, V. Fortin, Y. Tremblay, L. Ouellet, M. Wang, M. Biberger and F. Wong

Paper (1996)

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Additional Information: Nom historique du département: Département de métallurgie et de génie des matériaux
Department: Department of Engineering Physics
PolyPublie URL: https://publications.polymtl.ca/31311/
Conference Title: 13th International VLSI Multilevel Interconnection (V-MIC) Conference
Conference Location: Santa Clara, CA, USA
Conference Date(s): 1996-06-18 - 1996-06-20
Publisher: VMIC Tampa, FL, USA
Date Deposited: 18 Apr 2023 15:24
Last Modified: 25 Sep 2024 16:13
Cite in APA 7: Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Fortin, V., Tremblay, Y., Ouellet, L., Wang, M., Biberger, M., & Wong, F. (1996, June). Effect of the oxidation of TiN barrier on its efficiency as a diffusion barrier in AlSiCu metallization of VLSI devices [Paper]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA.

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