 | Monter d'un niveau |
Caron, M., Gagnon, G., Gauvin, R., Hovington, P., Drouin, D., Currie, J. F., Tremblay, Y., Ouellet, L., Bigerger, M., & Wong, F. (juin 1996). An iterative procedure based on Monte Carlo simulation to determine the thickness and composition of VLSI metallization [Communication écrite]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Non disponible
Fortin, V., Gujrathi, S. C., Gagnon, G., Gauvin, R., Currie, J. F., Ouellet, L., & Tremblay, Y. (1999). Effect of in Situ Plasma Oxidation of Tin Diffusion Barrier for Alsicu/Tin/Ti Metallization Structure of Integrated Circuits. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 17(2), 423-431. Lien externe
Fortin, V., Gagnon, G., Caron, M., Gujrathi, S. C., Currie, J. F., Ouellet, L., Tremblay, Y., & Biberger, M. (1998). The determination of phases formed in AlSiCu/TiN/Ti contact metallization structure of integrated circuits by x-ray diffraction. Journal of Applied Physics, 83(1), 132-138. Lien externe
Gujrathi, S. C., Gagnon, G., Fortin, V., Caron, M., Currie, J. F., Ouellet, L., & Tremblay, Y. (1998). Elastic Recoil Detection Using Time-of-Flight for Analysis of Tin/Alsicu/Tin/Ti Contact Metallization Structures. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 138, 661-668. Lien externe
Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., Fortin, V., Tremblay, Y., Ouellet, L., Wang, M., Biberger, M., & Wong, F. (juin 1996). Effect of the oxidation of TiN barrier on its efficiency as a diffusion barrier in AlSiCu metallization of VLSI devices [Communication écrite]. 13th International VLSI Multilevel Interconnection (V-MIC) Conference, Santa Clara, CA, USA. Non disponible
Gagnon, G., Gujrathi, S. C., Caron, M., Currie, J. F., Tremblay, Y., Ouellet, L., Biberger, M., & Reynolds, R. (1996). Effect of the oxidation of TiN on the stability of the Al/TiN interface. Journal of Applied Physics, 80(1), 188-195. Lien externe
Gagnon, G., Currie, J. F., Beique, G., Brebner, J. L., Gujrathi, S. C., & Ouellet, L. (1994). Characterization of reactively evaporated TiN layers for diffusion barrier applications. Journal of Applied Physics, 75(3), 1565-1570. Lien externe
Ouellet, L., Ajersch, F., & Ilinca, F. Numerical simulation and validation of flow in a galvanizing bath using a water model [Communication écrite]. Galvatech '04 : 6th international conference on zinc and zinc alloy coated steel sheet. Lien externe
Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., & Biberger, M. (1996). The effect of the Ti glue layer in an integrated Ti/TiN/Ti/AlSiCu/TiN contact metallization process. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 2627-2635. Lien externe
Ouellet, L., Tremblay, Y., Gagnon, G., Caron, M., Currie, J. F., Gujrathi, S. C., & Biberger, M. (1996). Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallization. Journal of vacuum science & technology. B. Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 3502-3508. Lien externe
